# US 11,310,905 B2 · Memory device including a conductive plate with a shielding region

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- Number: US 11,310,905 B2
- Document ID: US11310905B2
- Status: Granted
- Kind: B2
- Application number: 16/822,242
- Filed: 2020-03-18
- Published: 2020-12-31
- Granted: 2022-04-19
- Earliest claimed: 2019-06-27
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Chung Hyun Ryu; In Sub Kwak; Min Woo Gu
- Web page: https://patentgrep.com/patent/US11310905B2

## CPC

- G06K 19/07735: {the record carrier comprising means for protecting against electrostatic discharge}
- G06K 19/07743: {External electrical contacts}
- H05K 1/0203: {Cooling of mounted components (H05K1/0272 takes precedence)}
- H05K 1/0216: {Reduction of cross-talk, noise or electromagnetic interference (grounding H05K1/0215)}
- H05K 1/0259: {Electrostatic discharge [ESD] protection}
- H05K 9/0031: {combining different shielding materials}
- H05K 2201/066: Heatsink mounted on the surface of the printed circuit board [PCB]
- H05K 2201/10159: Memory
- H05K 2201/10371: Shields or metal cases
- H05K 2201/10522: Adjacent components
- G06K: GRAPHICAL DATA READING (image or video recognition or understanding G06V); PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

Provided is a memory device. The memory device includes a module board on which one or more semiconductor devices are disposed and a conductive plate mounted on a first side of the module board. The conductive plate includes a shielding region and a non-shielding region. A pad is disposed in the shielding region of the conductive plate.

## Claims

### Claim 1

A memory device, comprising:
a module board on which one or more semiconductor devices are disposed;
a conductive plate mounted on a first side of the module board, wherein the conductive plate includes a shielding region and a non-shielding region; and
a pad disposed in the shielding region of the conductive plate, the pad is configured for electrostatic discharge shielding,
wherein the one or more semiconductor devices include a memory controller, and
wherein the memory controller is disposed on the first side of the module board in the shielding region,
wherein a first side of the pad is in direct contact with the memory controller and second side of the pad is in direct contact with the conductive plate.

### Claim 2 (depends on 1)

The memory device of claim 1, wherein the conductive plate includes a first shielding wall structure formed on the conductive plate, and
wherein the shielding region and the non-shielding region are divided by the first shielding wall structure.

### Claim 3 (depends on 2)

The memory device of claim 2, wherein the first shielding wall structure includes a shielding wall contact portion formed so that a first side of the shielding wall contact portion is in direct contact with the module board, and
wherein the shielding wall contact portion at least partially surrounds the one or more semiconductor devices.

### Claim 4 (depends on 2)

The memory device of claim 2, further comprising:
a conductive back plate mounted on a second side of the module board,
wherein the conductive back plate further includes a second shielding wall structure formed to overlap the first shielding wall structure.

### Claim 5 (depends on 1)

The memory device of claim 1, wherein the pad is formed at a position at least partially overlapping the memory controller on the conductive plate.

### Claim 6 (depends on 1)

The memory device of claim 1, wherein the one or more semiconductor devices include a buffer memory and a nonvolatile memory, and
wherein the buffer memory is included in the shielding region, and the nonvolatile memory is included in the non-shielding region.

### Claim 7 (depends on 1)

The memory device of claim 1, wherein the pad includes an electromagnetic interference (EMI) absorption layer for electrostatic discharge (ESD) shielding of the one or more semiconductor devices, and a thermal interface material (TIM) layer for heat dissipation of the module board.

### Claim 8 (depends on 7)

The memory device of claim 7, wherein the pad includes:
the TIM layer having a first thickness, and
the EMI absorption layer disposed on the TIM layer and having a second thickness smaller than the first thickness.

### Claim 9 (depends on 7)

The memory device of claim 7, wherein the pad includes:
the EMI absorption layer having a first thickness, and
the TIM layer disposed on the EMI absorption layer and having a second thickness smaller than the first thickness.

### Claim 10 (depends on 7)

The memory device of claim 7, wherein the EMI absorption layer is disposed on the one or more semiconductor devices with a predetermined gap comprised of empty space formed between a lower face of the EMI absorption layer and an upper face of the one of more semiconductor devices.

### Claim 11 (depends on 1)

The memory device of claim 1, wherein the pad has a width in a range of 0.9x to 1.5x a width of the one or more semiconductor devices.

### Claim 12

A memory device, comprising:
a module board on which a memory controller is disposed; and
a conductive back plate mounted on a first side of the module board,
wherein the conductive back plate includes a shielding region and a non-shielding region, the shielding region including a first material configured for electrostatic discharge shielding, and
wherein the memory controller is disposed in the shielding region and overlaps the first material,
wherein a first side of the first material is in direct contact with the memory controller and a second side of the first material is in direct contact with the conductive back plate.

### Claim 13 (depends on 12)

The memory device of claim 12, wherein a buffer memory and a nonvolatile memory are further disposed on the module board, and
wherein the buffer memory is disposed in the shielding region, and the nonvolatile memory is disposed in the non-shielding region.

### Claim 14 (depends on 12)

The memory device of claim 12, wherein the shielding region is recessed from a surface of the conductive back plate.

### Claim 15

A memory device, comprising:
a module board on which one or more semiconductor devices are disposed; and
a conductive plate mounted on a first side of the module board,
wherein the conductive plate includes a shielding wall structure formed on the conductive plate,
wherein a first material configured for electrostatic discharge shielding is disposed inside the shielding wall structure,
wherein the one or more semiconductor devices include a memory controller, and
the memory controller is disposed on the first side of the module board and is inside the shielding wall structure,
wherein a pad including the first material is disposed inside the shielding wall structure, and
wherein a first side of the pad is in direct contact with the memory controller, and a second side of the pad is in direct contact with the conductive plate.

### Claim 16 (depends on 15)

The memory device of claim 15, wherein the one or more semiconductor devices include a buffer memory, and
wherein the buffer memory is disposed within the shielding wall structure on the first side of the module board.

### Claim 17 (depends on 1)

The memory device of claim 1, wherein:
the shielding region and the non-shielding region are divided from each other;
a memory controller and a buffer memory are disposed in the shielding region; and
the pad is disposed in only a partial portion of the shielding region,
wherein the pad overlaps the memory controller and the pad does not overlap the buffer memory.