# US 11,310,457 B2 · Display device and method for manufacturing the same

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- Number: US 11,310,457 B2
- Document ID: US11310457B2
- Status: Granted
- Kind: B2
- Application number: 16/663,403
- Filed: 2019-10-25
- Published: 2020-02-20
- Granted: 2022-04-19
- Earliest claimed: 2004-07-30
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Satoshi Murakami; Motomu Kurata; Hiroyuki Hata; Mitsuhiro Ichijo; Takashi Ohtsuki; Aya Anzai; Masayuki Sakakura
- Web page: https://patentgrep.com/patent/US11310457B2

## CPC

- H10D 86/441: {Interconnections, e.g. scanning lines}
- G06F 3/02: Input arrangements using manually operated switches, e.g. using keyboards or dials
- H04N 5/642: {Disposition of sound reproducers}
- H04N 5/655: Construction or mounting of chassis, e.g. for varying the elevation of the tube
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 86/40: characterised by multiple TFTs
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/856: Reflecting means
- H10K 59/124: Insulating layers formed between TFT elements and OLED elements
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/8722: {Peripheral sealing arrangements, e.g. adhesives, sealants}
- H10K 59/1201: {Manufacture or treatment}
- H10K 71/135: {using ink-jet printing}
- H10K 71/421: {using coherent electromagnetic radiation, e.g. laser annealing}
- H10K 2102/3031: {Two-side emission, e.g. transparent OLEDs [TOLED]}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

## Claims

### Claim 1

A semiconductor device, comprising:
a pixel portion comprising a transistor and a light emitting element electrically connected to the transistor, the transistor comprising:
a semiconductor layer;
a gate electrode over and overlap the semiconductor layer; and
source and drain electrodes over and electrically connected to the semiconductor layer; and
a protective circuit,
wherein the semiconductor layer comprises a region which does not overlap any of the gate electrode, the source electrode, and the drain electrode,
wherein a part of a gate wiring layer functions as the gate electrode,
wherein the gate wiring layer comprises a first portion in the pixel portion and a second portion in the protective circuit,
wherein the first portion and the second portion extend along a same direction, and
wherein the first portion and the second portion do not extend in a same straight line.

### Claim 2

A semiconductor device, comprising:
a pixel portion comprising a transistor and a light emitting element electrically connected to the transistor, the transistor comprising:
a semiconductor layer;
a gate electrode over and overlap the semiconductor layer; and
source and drain electrodes over and electrically connected to the semiconductor layer; and
a protective circuit between the pixel portion and a driver circuit,
wherein the semiconductor layer comprises a region which does not overlap any of the gate electrode, the source electrode, and the drain electrode,
wherein a part of a gate wiring layer functions as the gate electrode,
wherein the gate wiring layer comprises a first portion in the pixel portion and a second portion in the protective circuit,
wherein the first portion and the second portion extend along a same direction, and
wherein the first portion and the second portion do not extend in a same straight line.