# US 11,310,447 B2 · Image sensor controlling a conversion gain, imaging device having the same, and method of operating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,310,447 B2 - Document ID: US11310447B2 - Status: Granted - Kind: B2 - Application number: 16/997,234 - Filed: 2020-08-19 - Published: 2021-05-13 - Granted: 2022-04-19 - Earliest claimed: 2019-11-12 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jungbin Yun; Hwanwoong Kim; Eunsub Shim; Kyungho Lee; Hongsuk Lee - Web page: https://patentgrep.com/patent/US11310447B2 ## CPC - H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H04N 25/42: by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode - H04N 25/709: Circuitry for control of the power supply - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/807: {Pixel isolation structures} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal. ## Claims ### Claim 1 An image sensor comprising: a first pixel comprising a first floating diffusion region and a second floating diffusion region; a second pixel comprising a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region; a third pixel comprising a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region; and a fourth pixel comprising a first floating diffusion region and a second floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are directly connected through a first metal line, wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are directly connected through a second metal line, and wherein each of the second pixel and the third pixel comprises a second conversion gain transistor provided directly between a second floating diffusion node corresponding to the second floating diffusion region of each of the second pixel and the third pixel and a third floating diffusion node corresponding to a third floating diffusion region of each of the second pixel and the third pixel based on a second conversion gain signal. ### Claim 2 (depends on 1) The image sensor of claim 1, wherein each of the first pixel, the second pixel, the third pixel, and the fourth pixel further comprises at least one photodiode. ### Claim 3 (depends on 2) The image sensor of claim 2, wherein each of the first pixel, the second pixel, the third pixel, and the fourth pixel comprises: a transfer transistor configured to connect the at least one photodiode and a first floating diffusion node corresponding to the first floating diffusion region of each of the first pixel, the second pixel, the third pixel, and the fourth pixel based on a transfer gate signal; and a first conversion gain transistor configured to connect the at least one photodiode and a second floating diffusion node corresponding to the second floating diffusion region of each of the first pixel and the fourth pixel and the second floating diffusion node corresponding to the second floating diffusion region of each of the second pixel and the third pixel based on a first conversion gain signal. ### Claim 4 (depends on 3) The image sensor of claim 3, wherein each of the first pixel and the fourth pixel comprises a reset transistor configured to provide a pixel driving voltage to the second floating diffusion node of each of the first pixel and the fourth pixel based on a reset gate signal. ### Claim 5 (depends on 1) The image sensor of claim 1, wherein the second floating diffusion region of the third pixel and the second floating diffusion region of the fourth pixel are connected through a metal line. ### Claim 6 (depends on 1) The image sensor of claim 1, wherein each of the first pixel, the second pixel, the third pixel, and the fourth pixel comprises: a source follower transistor comprising a gate connected to a first floating diffusion node corresponding to the first floating diffusion region of each of the first pixel, the second pixel, the third pixel, and the fourth pixel, and a source receiving a pixel driving voltage; and a selection transistor comprising a gate receiving a selection signal, a source connected to a drain of the source follower transistor, and a drain connected to an output line. ### Claim 7 (depends on 1) The image sensor of claim 1, wherein the first pixel and the second pixel are symmetrical with each other, wherein the second pixel and the third pixel are symmetrical with each other, and wherein the third pixel and the fourth pixel are symmetrical with each other. ### Claim 8 An image sensor comprising: a first pixel; a second pixel; a third pixel; and a fourth pixel, wherein each of the first to fourth pixels comprises: a first transistor configured to connect at least one photodiode and a first floating diffusion node based on a transfer gate signal; a second transistor configured to connect the first floating diffusion node and a second floating diffusion node based on a first conversion gain signal; a third transistor comprising a drain connected to the second floating diffusion node; a fourth transistor comprising a source connected to a power supply terminal configured to provide a pixel driving voltage and a gate connected to the first floating diffusion node; and a fifth transistor comprising a source connected to a drain of the fourth transistor, a drain connected to a column line, and a gate configured to receive a selection signal, wherein the second floating diffusion node of the first pixel and the second floating diffusion node of the second pixel are directly connected through a metal line, wherein a second floating diffusion node of the third pixel and the second floating diffusion node of the fourth pixel are directly connected through a metal line, and wherein a third floating diffusion node of the second pixel and a third floating diffusion node of the third pixel are directly connected through a metal line. ### Claim 9 (depends on 8) The image sensor of claim 8, wherein the first pixel, the second pixel, the third pixel, and the fourth pixel are connected to one column line. ### Claim 10 (depends on 8) The image sensor of claim 8, wherein each of the first pixel, the second pixel, the third pixel, and the fourth pixel is connected to a corresponding column line. ### Claim 11 (depends on 8) The image sensor of claim 8, wherein the at least one photodiode is implemented in a two-photodiode (2-PD) structure and separated by a deep trench isolation (DTI). ### Claim 12 (depends on 8) The image sensor of claim 8, wherein the at least one photodiode is implemented in a two-photodiode (2-PD) structure separated by a PN junction. ### Claim 13 (depends on 8) The image sensor of claim 8, wherein the third transistor of each of the first pixel, the second pixel, the third pixel, and the fourth pixel connects the power supply terminal and the second floating diffusion node based on a reset gate signal. ### Claim 14 (depends on 13) The image sensor of claim 13, wherein the third transistor of each of the second pixel and the third pixel connects the second floating diffusion node and the third floating diffusion node based on a second conversion gain signal. ### Claim 15 (depends on 14) The image sensor of claim 14, wherein the first conversion gain signal and the second conversion gain signal are controlled to change a size of a floating diffusion region of a pixel based on an operating mode. ### Claim 16 A method of operating an imaging device, the method comprising: receiving an operating mode from an image sensor; and controlling a size of a floating diffusion region of a pixel group based on the received operating mode, wherein the operating mode comprises at least three operating modes, wherein the pixel group comprises: a first pixel comprising a first floating diffusion region and a second floating diffusion region; a second pixel comprising a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region; a third pixel comprising a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region; and a fourth pixel comprising a first floating diffusion region and a second floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are directly connected through a first metal line, wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are directly connected through a second metal line, and wherein each of the second pixel and the third pixel comprises a second conversion gain transistor provided directly between a second floating diffusion node corresponding to the second floating diffusion region of each of the second pixel and the third pixel and a third floating diffusion node corresponding to a third floating diffusion region of each of the second pixel and the third pixel based on a second conversion gain signal. ### Claim 17 (depends on 16) The method of claim 16, wherein each of the first pixel, the second pixel, the third pixel, and the fourth pixel comprises: a first conversion gain transistor configured to connect the first floating diffusion region of each of the first pixel, the second pixel, the third pixel, and the fourth pixel and the second floating diffusion region of each of the first pixel, the second pixel, the third pixel, and the fourth pixel based on a first conversion gain signal; and a second conversion gain transistor configured to connect the second floating diffusion region of each of the second pixel and the third pixel and the third floating diffusion region of each of the second pixel and the third pixel based on a second conversion gain signal. ### Claim 18 (depends on 17) The method of claim 17, wherein the controlling the size of the floating diffusion region comprises controlling timing of providing the first conversion gain signal and the second conversion gain signal based on the operating mode to change the size of the floating diffusion region.