# US 11,310,444 B2 · Solid-state image pickup element, image pickup device, and method of manufacturing solid-state image pickup element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,310,444 B2 - Document ID: US11310444B2 - Status: Granted - Kind: B2 - Application number: 16/898,961 - Filed: 2020-06-11 - Published: 2020-09-24 - Granted: 2022-04-19 - Earliest claimed: 2015-12-11 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Harumi Tanaka; Itaru Oshiyama; Sozo Yokogawa - Web page: https://patentgrep.com/patent/US11310444B2 ## CPC - G02B 1/118: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures - G02B 5/20: Filters (polarising elements G02B5/30) - G02B 5/26: Reflecting filters (G02B5/28 takes precedence) - H04N 23/54: Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils - H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof - H04N 23/60: Control of cameras or camera modules - H04N 23/74: by influencing the scene brightness using illuminating means - H04N 25/20: for transforming only infrared radiation into image signals - H04N 25/40: Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled - H04N 25/70: SSIS architectures; Circuits associated therewith - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 39/182: {Colour image sensors} - H10F 39/184: {Infrared image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8033: {Photosensitive area} - H10F 39/805: {Coatings} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/807: {Pixel isolation structures} - H10F 39/014: {of CMOS image sensors} - H10F 39/024: {of coatings or optical elements} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel. In addition, a trench is further formed inside the pixel at a surface opposed to the light-receiving surface. ## Claims ### Claim 1 A solid-state image pickup element, comprising: a substrate including a photodiode; a pixel on the substrate, wherein the pixel comprises a plurality of protrusions on a light-receiving surface of the substrate; a light-receiving-surface-sided trench around the pixel, wherein the light-receiving-surface-sided trench is at the light-receiving surface of the substrate; a light-receiving-surface-sided member in the light-receiving-surface-sided trench; an opposed-surface-sided trench on an opposed surface opposite to the light-receiving surface of the substrate, wherein the opposed-surface-sided trench is in the photodiode; and an opposed-surface-sided member in the opposed-surface-sided trench. ### Claim 2 (depends on 1) The solid-state image pickup element according to claim 1, wherein the opposed-surface-sided member includes a member with a refractive index lower than a refractive index of the pixel. ### Claim 3 (depends on 1) The solid-state image pickup element according to claim 1, wherein the opposed-surface-sided trench is at a center portion of the pixel. ### Claim 4 (depends on 1) The solid-state image pickup element according to claim 1, wherein the plurality of protrusions is in a partial region of the pixel at the light-receiving surface of the pixel. ### Claim 5 (depends on 1) The solid-state image pickup element according to claim 1, wherein a depth of the opposed-surface-sided trench is shorter than a distance between the light-receiving surface and the opposed surface. ### Claim 6 (depends on 1) The solid-state image pickup element according to claim 1, wherein the light-receiving-surface-sided member includes a member with a refractive index lower than a refractive index of the pixel. ### Claim 7 (depends on 1) The solid-state image pickup element according to claim 1, wherein the pixel further includes: an infrared-light pixel configured to receive infrared light; and a visible-light pixel configured to receive visible light. ### Claim 8 (depends on 7) The solid-state image pickup element according to claim 7, wherein the plurality of protrusions is on the infrared-light pixel. ### Claim 9 (depends on 7) The solid-state image pickup element according to claim 7, wherein the plurality of protrusions is on the infrared-light pixel and the visible-light pixel. ### Claim 10 (depends on 7) The solid-state image pickup element according to claim 7, further comprising a near-infrared-light interrupting filter configured to interrupt the infrared light from the visible light and the infrared light, wherein the near-infrared-light interrupting filter is between the visible-light pixel and an image pickup lens. ### Claim 11 (depends on 7) The solid-state image pickup element according to claim 7, wherein the infrared-light pixel includes a first photoelectric conversion portion configured to photoelectrically convert the infrared light into a first charge, the visible-light pixel includes a second photoelectric conversion portion configured to photoelectrically convert the visible light into a second charge, and the first photoelectric conversion portion expands beneath the second photoelectric conversion portion with a direction toward an image pickup lens. ### Claim 12 (depends on 7) The solid-state image pickup element according to claim 7, wherein the visible-light pixel includes at least one of a red pixel, a green pixel, or a blue pixel. ### Claim 13 (depends on 7) The solid-state image pickup element according to claim 7, further comprising a pixel separation region that separates the infrared-light pixel from the visible-light pixel. ### Claim 14 (depends on 1) The solid-state image pickup element according to claim 1, further comprising a moth-eye structure on the light-receiving surface of the substrate. ### Claim 15 (depends on 14) The solid-state image pickup element according to claim 14, wherein the moth-eye structure is configured to reduce reflectance of a photoelectric conversion region in the substrate.