# US 11,310,355 B2 · Radio frequency module and communication device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,310,355 B2 - Document ID: US11310355B2 - Status: Granted - Kind: B2 - Application number: 17/020,822 - Filed: 2020-09-15 - Published: 2021-03-25 - Granted: 2022-04-19 - Earliest claimed: 2019-09-20 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Takayuki Shinozaki - Web page: https://patentgrep.com/patent/US11310355B2 ## CPC - H04M 1/026: {Details of the structure or mounting of specific components} - H04M 1/0277: {for a printed circuit board assembly} - H03F 1/56: Modifications of input or output impedances, not otherwise provided for - H03F 1/565: {using inductive elements} - H03F 3/195: in integrated circuits - H03F 3/245: {with semiconductor devices only} - H03F 3/72: Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal - H04B 1/005: {adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges} - H04B 1/006: {using switches for selecting the desired band (H04B1/0057 takes precedence)} - H04B 1/0458: {Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H)} - H04B 1/18: Input circuits, e.g. for coupling to an antenna or a transmission line (coupling networks between antennas or lines and receivers independent of the nature of the receiver H03H) - H04B 1/52: Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa - H03F 2200/111: the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not - H03F 2200/165: A filter circuit coupled to the input of an amplifier - H03F 2200/171: A filter circuit coupled to the output of an amplifier - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/294: the amplifier being a low noise amplifier [LNA] - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2200/451: the amplifier being a radio frequency amplifier - H03F 2203/7209: the gated amplifier being switched from a first band to a second band - H04M: TELEPHONIC COMMUNICATION (circuits for controlling other apparatus via a telephone cable and not involving telephone switching apparatus G08) - H03F: AMPLIFIERS - H04B: TRANSMISSION ## Abstract A radio frequency module that simultaneously receives a first reception signal and a second reception signal includes: a module board including a first principal surface and a second principal surface on opposite sides of the module board; a first reception low noise amplifier that is disposed in a first semiconductor IC and amplifies the first reception signal; a second reception low noise amplifier that is disposed in a second semiconductor IC different from the first semiconductor IC and amplifies the second reception signal; and an external-connection terminal that is disposed on the second principal surface. At least one of the first semiconductor IC or the second semiconductor IC is disposed on the second principal surface. ## Claims ### Claim 1 A radio frequency module that simultaneously receives a first reception signal and a second reception signal, the radio frequency module comprising: a module hoard including a first principal surface and a second principal surface on opposite sides of the module board; a first reception low noise amplifier disposed in a first semiconductor integrated circuit (IC) and configured to amplify the first reception signal; a second reception low noise amplifier disposed in a second semiconductor IC and configured to amplify the second reception signal, the second semiconductor IC being different from the first semiconductor IC; a transmission power amplifier disposed on the first principle surface, and an external-connection terminal disposed on the second principal surface, wherein at least one of the first semiconductor IC or the second semiconductor IC is disposed on the second principal surface, the first semiconductor IC is disposed on one of the first principal surface and the second principal surface, and the second semiconductor IC is disposed on an other of the first principal surface and the second principal surface. ### Claim 2 (depends on 1) The radio frequency module according to claim 1, wherein: the first reception signal is received in a first communication band, and the second reception signal is received in a second communication band, the first communication band being different than the second communication band. ### Claim 3 (depends on 1) The radio frequency module according to claim 1, further comprising: a third reception low noise amplifier disposed in the first semiconductor IC and configured to amplify a third reception signal, wherein the radio frequency module is configured to not simultaneously receive both the first reception signal and the third reception signal. ### Claim 4 (depends on 3) The radio frequency module according to claim 3, wherein: the third reception signal is received in the first communication band. ### Claim 5 (depends on 3) The radio frequency module according to claim 3, further comprising: a fourth reception low noise amplifier disposed in the second semiconductor IC and configured to amplify a fourth reception signal, wherein the radio frequency module is configured to not simultaneously receive both the second reception signal and the fourth reception signal. ### Claim 6 (depends on 5) The radio frequency module according to claim 5, wherein: the fourth reception signal is received in the second communication hand. ### Claim 7 (depends on 1) The radio frequency module according to claim 1, further comprising: a transmission power amplifier disposed on the first principle surface, wherein the first semiconductor IC and the second semiconductor IC are both disposed on the second principal surface. ### Claim 8 (depends on 3) The radio frequency module according to claim 3, wherein in a plan view of the module board, the external-connection terminal having a ground potential is disposed between the first semiconductor IC and the second semiconductor IC. ### Claim 9 (depends on 1) The radio frequency module according to claim 1, further comprising: a control circuit disposed in the first semiconductor IC and configured to control the first reception low noise amplifier by a digital control signal. ### Claim 10 (depends on 1) The radio frequency module according to claim 1, further comprising: a control circuit disposed in the first semiconductor IC and configured to control the first reception low noise amplifier by a digital control signal; an antenna connection terminal; and a circuit component disposed on one of a first reception path and a second reception path, the first reception path connecting the antenna connection terminal and the first reception low noise amplifier, the second reception path connecting the antenna connection terminal and the second reception low noise amplifier, wherein the first semiconductor C and the circuit component are disposed on the second principal surface, and the second semiconductor IC is disposed on the st principal surface. ### Claim 11 (depends on 10) The radio frequency module according to claim 10, wherein in a plan view of the module board, the external-connection terminal having a ground potential is disposed between the first semiconductor IC and the circuit component. ### Claim 12 A communication device, comprising: an antenna; a radio frequency (RF) signal processing circuit configured to process a radio frequency signal to be transmitted by the antenna and a radio frequency signal received by the antenna; and a radio frequency module configured to simultaneously receive a first reception signal and a second reception signal, the radio frequency module including a module board including a first principal surface and a second principal surface on opposite sides of the module board, a first reception low noise amplifier disposed in a first semiconductor integrated circuit (IC) and configured to amplify the first reception signal, a second reception low noise amplifier disposed in a second semiconductor IC and configured to amplify the second reception signal, the second semiconductor IC being different from the first semiconductor IC, a transmission power amplifier disposed on the first principle surface, and an external-connection terminal disposed on the second principal surface, wherein at least one of the first semiconductor IC or the second semiconductor IC is disposed on the second principal surface, the first semiconductor IC is disposed on one of the first principal surface and the second principal surface, and the second semiconductor IC is disposed on an other of the first principal surface and the second principal surface. ### Claim 13 (depends on 12) The communication device according to claim 12, wherein the communication device is configured to transfer the radio frequency signals between the antenna and the RF signal processing circuit. ### Claim 14 (depends on 12) The communication device according to claim 12, wherein: the first reception signal is received in a first communication band, and the second reception signal is received in a second communication band, the first communication band being different than the second communication band. ### Claim 15 (depends on 12) The communication device according to claim 12, wherein the radio frequency device further comprising: a third reception low noise amplifier disposed in the first semiconductor IC and configured to amplify a third reception signal, wherein the radio frequency module is configured to not simultaneously receive both the first reception signal and the third reception signal. ### Claim 16 (depends on 15) The communication device according to claim 15, wherein: the third reception signal is received in the first communication band. ### Claim 17 (depends on 15) The communication device according to claim 15, wherein the radio frequency device further comprising: a fourth reception low noise amplifier disposed in the second semiconductor IC and configured to amplify a fourth reception signal, wherein the radio frequency module is configured to not simultaneously receive both the second reception signal and the fourth reception signal. ### Claim 18 (depends on 17) The communication device according to claim 17, wherein: the fourth reception signal is received in the second communication band.