# US 11,309,834 B2 · High-power terahertz oscillator

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- Number: US 11,309,834 B2
- Document ID: US11309834B2
- Status: Granted
- Kind: B2
- Application number: 17/290,811
- Filed: 2019-11-19
- Published: 2021-10-21
- Granted: 2022-04-19
- Earliest claimed: 2018-11-19
- Assignees: Tokyo Institute of Technology
- Applicants: Tokyo Institute of Technology
- Inventors: Masahiro Asada; Safumi Suzuki; Hiroki Tanaka
- Web page: https://patentgrep.com/patent/US11309834B2

## CPC

- H01Q 23/00: Antennas with active circuits or circuit elements integrated within them or attached to them
- H03B 5/1817: {the frequency-determining element being a cavity resonator}
- H01Q 1/38: formed by a conductive layer on an insulating support {(patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142)}
- H01Q 9/28: Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines (waveguide horns or mouths H01Q13/00; slot antennas H01Q13/00)
- H03B 7/08: being a tunnel diode
- H03B 7/14: active element being semiconductor device
- H10D 8/70: Tunnel-effect diodes
- H03B 2200/0084: dedicated to Terahertz frequencies
- H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72)
- H03B: GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (generators adapted for electrophonic musical instruments G10H; masers or lasers H01S; generation of oscillations in plasma H05H)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A small-size high-power terahertz oscillator achieves a stable oscillation in a terahertz frequency band even at room temperature. The high-power terahertz oscillator has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator, which includes two cavities, is disposed at a power supply portion of the bow-tie antenna, and a resonant tunneling diode (RTD) is disposed along a bottom of a wall of the cavity resonator, which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

## Claims

### Claim 1

A high-power terahertz oscillator, comprising:
a bow-tie antenna, which includes first and second conductor strips, disposed on a substrate;
a cavity resonator, which includes two cavities, disposed at an oscillating portion of said bow-tie antenna;
a resonant tunneling diode, which is cuboid, disposed along a bottom of a wall which defines the two cavities; and
an insulating thin film disposed between said first and second conductor strips of said bow-tie antenna, and disposed between a bottom of said cavity resonator and said second conductor strip of said bow-tie antenna,
wherein said first conductor strip of said bow-tie antenna is integrated with said cavity resonator, and
wherein an oscillation in a terahertz frequency band is obtained from said resonant tunneling diode, said bow-tie antenna and said cavity resonator, by applying a bias voltage between said second conductor strip of said bow-tie antenna and a side surface or a top surface of said cavity resonator connected to said first conductor strip of said bow-tie antenna.

### Claim 2 (depends on 1)

The high-power terahertz oscillator according to claim 1, wherein a bottom surface of said resonant tunneling diode is in contact with a top surface of said second conductor strip of said bow-tie antenna.

### Claim 3 (depends on 1)

The high-power terahertz oscillator according to claim 1, wherein said first and second conductor strips of said bow-tie antenna and said cavity resonator are made of a good conductor, and said substrate is made of a semi-insulator.

### Claim 4 (depends on 2)

The high-power terahertz oscillator according to claim 2, wherein said first and second conductor strips of said bow-tie antenna and said cavity resonator are made of a good conductor, and said substrate is made of a semi-insulator.

### Claim 5 (depends on 1)

The high-power terahertz oscillator according to claim 1, wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.

### Claim 6 (depends on 2)

The high-power terahertz oscillator according to claim 2, wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.

### Claim 7 (depends on 3)

The high-power terahertz oscillator according to claim 3, wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.

### Claim 8 (depends on 4)

The high-power terahertz oscillator according to claim 4, wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.
