# US 11,309,793 B2 · Latch-type charge pump > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,793 B2 - Document ID: US11309793B2 - Status: Granted - Kind: B2 - Application number: 16/997,299 - Filed: 2020-08-19 - Published: 2022-02-24 - Granted: 2022-04-19 - Earliest claimed: 2020-08-19 - Assignees: Ferroelectric Memory GmbH - Applicants: Ferroelectric Memory GmbH - Inventors: Rashid Iqbal - Web page: https://patentgrep.com/patent/US11309793B2 ## CPC - H02M 3/07: using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} - H02M 3/073: {Charge pumps of the Schenkel-type} - H03K 17/687: the devices being field-effect transistors - H02M 1/0083: {Converters characterised by their input or output configuration} - H03K 2217/0018: Special modifications or use of the back gate voltage of a FET - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract According to various aspects, a latch-type charge pump may include: an input node and an output node; a first charge storage and a second charge storage coupled in parallel to each other, a first switch coupled to the input node and a second switch coupled to the output node, wherein the first charge storage couples the first switch with the second switch; and a control circuit configured to control the first switch based on a state of the second charge storage, and to control the second switch based on a state of the first charge storage. ## Claims ### Claim 1 A latch-type charge pump, comprising: an input node and an output node; a first charge storage and a second charge storage coupled in parallel to each other between the input node and the output node, a first switch coupled to the input node and a second switch coupled to the output node, wherein the first charge storage couples the first switch with the second switch; and a control circuit configured to control the first switch based on a state of the second charge storage, and to control the second switch based on a state of the first charge storage, wherein the control circuit comprises a diode-connected field-effect transistor. ### Claim 2 (depends on 1) The latch-type charge pump of claim 1, wherein the control circuit is configured to supply a control signal based on the state of the first charge storage to a control node of the second switch. ### Claim 3 (depends on 2) The latch-type charge pump of claim 2, wherein the second switch comprises a field-effect transistor and wherein the control node is a gate terminal of the field-effect transistor. ### Claim 4 (depends on 1) The latch-type charge pump of claim 1, wherein the control circuit: comprises a controller node; and is configured to control the second switch further based on a signal capacitively supplied to the controller node. ### Claim 5 (depends on 1) The latch-type charge pump of claim 1, wherein the diode-connected field-effect transistor couples the first charge storage with the second switch. ### Claim 6 (depends on 5) The latch-type charge pump of claim 5, wherein a control node of the diode-connected field-effect transistor is coupled to a control node of the second switch. ### Claim 7 (depends on 5) The latch-type charge pump of claim 5, wherein a control node of the diode-connected field-effect transistor is coupled to the first charge storage. ### Claim 8 (depends on 1) The latch-type charge pump of claim 1, wherein the first switch includes a first field-effect transistor; and wherein the second switch includes a second field-effect transistor; wherein the first field-effect transistor and the second field-effect transistor are of a same channel doping type. ### Claim 9 (depends on 8) The latch-type charge pump of claim 8, wherein the charge pump is configured such that, when supplied with a supply voltage, each field-effect transistor of the charge pump is stressed to a maximum voltage that is equal to the supply voltage or less than the supply voltage. ### Claim 10 (depends on 1) The latch-type charge pump of claim 1, further comprising: a further first switch coupled to the input node and a further second switch coupled to the output node, wherein the second charge storage couples the further first switch with the further second switch; and wherein the control circuit is configured to control the further first switch based on a state of the first charge storage, and to supply a signal to a control terminal of the further second switch based on a state of the second charge storage. ### Claim 11 (depends on 1) The latch-type charge pump of claim 1, which has no parasitic bipolar effect. ### Claim 12 A latch-type charge pump, comprising: an input node and an output node; a first charge storage and a second charge storage coupled in parallel to each other between the input node and the output node, a first field-effect transistor coupled to the input node and a second field-effect transistor coupled to the output node, wherein the first charge storage couples the first field-effect transistor with the second field-effect transistor; and wherein the first field-effect transistor and the second field-effect transistor are of a same type of channel doping; a control circuit comprising one or more control transistors coupling the first charge storage to the second field-effect transistor and being of the same type of channel doping, wherein the one or more control transistors comprises one or more diode-connected field-effect transistors. ### Claim 13 (depends on 12) The latch-type charge pump of claim 12, the control circuit configured to: supply a first control signal based on a state of the first charge storage to a gate of the second field-effect transistor; and/or supply a second control signal based on a state of the second charge storage to a gate of the first field-effect transistor. ### Claim 14 (depends on 12) The latch-type charge pump of claim 12, further comprising: a further first field-effect transistor coupled to the input node and a further second field-effect transistor coupled to the output node, wherein the second charge storage couples the further first field-effect transistor with the further second field-effect transistor; and wherein the control circuit is configured to supply a further first signal to a gate of the further second field-effect transistor based on a state of the second charge storage and to supply a further second control signal based on a state of the first charge storage to a gate of the further first field-effect transistor; wherein the further first field-effect transistor and the further second field-effect transistor are of the same type of channel doping. ### Claim 15 (depends on 12) The latch-type charge pump of claim 12, wherein a gate of the one or more control transistors is coupled to a gate of the second field-effect transistor; or wherein a gate of the one or more control transistors is coupled to the first charge storage. ### Claim 16 (depends on 12) The latch-type charge pump of claim 12, wherein the first field-effect transistor and the second field-effect transistor are configured to suppress a parasitic current through the respective field-effect transistor into a substrate. ### Claim 17 (depends on 12) The latch-type charge pump of claim 12, wherein the first field-effect transistor is a first triple well device and the second field-effect transistor is a second triple well device. ### Claim 18 A latch-type charge pump, comprising: an input node and an output node; a latch structure comprising a pair of first switches coupled to each other by the input node; a pair of second switches coupled to each other by the output node, each second switch coupling the latch structure with the output node, a control circuit configured to control the pair of second switches in push-pull configuration and independently from the latch structure, wherein the control circuit comprises a pair of diode-connected field-effect transistors. ### Claim 19 (depends on 18) The latch-type charge pump of claim 18, wherein each switch of the pair of first switches includes a first field-effect transistor; and wherein each switch of the pair of second switches includes a second field-effect transistor; wherein the first field-effect transistor and the second field-effect transistor are of a same type of channel doping. ### Claim 20 (depends on 18) The latch-type charge pump of claim 18, wherein each switch of the pair of first switches is a first triple well device and wherein each switch of the pair of second switches is a second triple well device.