US 11,309,688 B2 · Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

Abstract

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

A method for manufacturing a nitride semiconductor light-emitting element, the method comprising:

fabricating a semiconductor layer stacked substrate including a semiconductor layer stacked body on a substrate, the semiconductor layer stacked body including a plurality of waveguides extending in a second direction substantially orthogonal to a first direction;
fabricating a plurality of bar-shaped substrates by splitting the semiconductor layer stacked substrate along a plurality of first-direction split lines parallel to the first direction, resulting in the plurality of waveguides being cut;
and
fabricating a plurality of individual elements by splitting each of the plurality of bar-shaped substrates along a plurality of second-direction split lines parallel to the second direction, wherein
a waveguide in each of the plurality of individual elements has different widths at one end portion and another end portion and a center line of the waveguide is located off a center of the individual element along the first direction,
the semiconductor layer stacked substrate includes a plurality of element forming regions corresponding to the plurality of individual elements,
the plurality of element forming regions include a first element forming region and a second element forming region which are adjacent to each other in the second direction, and
two of the plurality of second-direction split lines sandwiching the first element forming region and two of the plurality of second-direction split lines sandwiching the second element forming region are misaligned in the first direction, and
wherein:
the plurality of first-direction split lines include a first first-direction split line, a second first-direction split line, and a third first-direction split line,
the plurality of second-direction split lines include:
a first second-direction split line and a second second-direction split line sandwiching the first element forming region;
and a third second-direction split line and a fourth second-direction split line sandwiching the second element forming region,
the first element forming region is enclosed by the first first-direction split line, the second first-direction split line, the first second-direction split line, and the second second-direction split line,
the second element forming region is enclosed by the second first-direction split line, the third first-direction split line, the third second-direction split line, and the fourth second-direction split line,
each of the plurality of waveguides in the semiconductor layer stacked substrate satisfies W1=W3 and W1≠W2, where W1 is a first width of the waveguide in the first direction on the first first-direction split line, W2 is a second width of the waveguide in the first direction on the second first-direction split line, and W3 is a third width of the waveguide in the first direction on the third first-direction split line,
D1=D2 is satisfied, where D1 is a distance between the first second-direction split line and the second second-direction split line, and D2 is a distance between the third second-direction split line and the fourth second-direction split line,
in the semiconductor layer stacked substrate, the waveguide in the first element forming region is closer to the first second-direction split line than to the second second-direction split line, and the waveguide in the second element forming region is closer to the fourth second-direction split line than to the third second-direction split line, and
a width between the waveguide in the first element forming region and the first second-direction split line is equal to a width between the waveguide in the second element forming region and the fourth second-direction split line.

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Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

Life of this patent

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

Life of this patent

Abstract

Claims20