# US 11,309,510 B2 · Light emitting device (LED) and multi-stacked LED including charge generation junction (CGJ) layer, and manufacturing method thereof

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- Number: US 11,309,510 B2
- Document ID: US11309510B2
- Status: Granted
- Kind: B2
- Application number: 16/928,295
- Filed: 2020-07-14
- Published: 2021-01-21
- Granted: 2022-04-19
- Earliest claimed: 2019-07-15
- Assignees: University-Industry Cooperation Group of Kyung Hee University
- Applicants: University-Industry Cooperation Group of Kyung Hee University
- Inventors: Jin Jang; Jeong Gi Kim
- Web page: https://patentgrep.com/patent/US11309510B2

## CPC

- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10K 50/15: Hole transporting layers
- H10K 50/19: Tandem OLEDs
- H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K 2102/00: Constructional details relating to the organic devices covered by this subclass
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2<x<1.5.

## Claims

### Claim 1

A light emitting device (LED) comprising an anode, a hole transport layer, a light emitting layer, and a cathode, the LED comprising:
a charge generation junction (CGJ) layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked,
wherein the n-type oxide includes zinc oxide (ZnO), and
the p-type oxide is represented by the following formula:
Cu2Sn2-XS3—(GaX)2O3 [Formula]
where 0.2<x<1.5.

### Claim 2 (depends on 1)

The LED of claim 1, wherein the n-type oxide and the p-type oxide have the band gap energy of 3.0 eV or more.

### Claim 3 (depends on 1)

The LED of claim 1, wherein the n-type oxide is ZnO doped with a dopant.

### Claim 4 (depends on 3)

The LED of claim 3, wherein the dopant includes at least one of cesium (Cs), lithium (Li), aluminum (Al), magnesium (Mg), indium (In), and gallium (Ga).

### Claim 5 (depends on 1)

The LED of claim 1, wherein the light emitting layer includes at least one of a quantum dot, an oxide layer, a nitride layer, a semiconductor layer, an organic compound layer, an inorganic compound layer, a phosphor layer, and a dye layer.

### Claim 6 (depends on 1)

The LED of claim 1, wherein the LED has the current efficiency (CE) of 1 cd/A to 100 cd/A.

### Claim 7 (depends on 1)

The LED of claim 1, wherein the LED has the external quantum efficiency (EQE) of 5% to 25%.

### Claim 8

A multi-stacked light emitting diode (LED) comprising an anode, a hole transport layer, at least two light emitting layers, and a cathode, the multi-stacked LED comprising:
a charge generation junction (CGJ) layer in which a layer-by-layer structure in which an n-type oxide and a p-type oxide are sequentially stacked is formed between the at least two light emitting layers,
wherein the n-type oxide includes zinc oxide (ZnO), and
the p-type oxide is represented by the following formula:
Cu2Sn2-XS3—(GaX)2O3 [Formula]
where 0.2<x<1.5.

### Claim 9 (depends on 8)

The multi-stacked LED of claim 8, wherein the n-type oxide and the p-type oxide have the band gap energy of 3.0 eV or more.

### Claim 10 (depends on 8)

The multi-stacked LED of claim 8, wherein the n-type oxide is ZnO doped with a dopant.

### Claim 11 (depends on 10)

The multi-stacked LED of claim 10, wherein the dopant includes at least one of cesium (Cs), lithium (Li), aluminum (Al), magnesium (Mg), indium (In), and gallium (Ga).

### Claim 12 (depends on 8)

The multi-stacked LED of claim 8, wherein the multi-stacked LED has the current efficiency (CE) of 3 cd/A to 300 cd/A.

### Claim 13 (depends on 8)

The multi-stacked LED of claim 8, wherein the multi-stacked LED has the external quantum efficiency (EQE) of 15% to 75%.

### Claim 14

A method of manufacturing a light emitting device (LED), the method comprising:
forming an anode on a substrate;
forming a hole transport layer on the anode;
forming a light emitting layer on the hole transport layer;
forming a cathode on the light emitting layer; and
forming a charge generation junction (CGJ) layer on at least one surface of the light emitting layer,
wherein the CGJ layer is formed through film formation with a solution that includes an n-type oxide including zinc oxide (ZnO) and a p-type oxide represented by the following formula:
Cu2Sn2-XS3—(GaX)2O3 [Formula]
where 0.2<x<1.5.

### Claim 15 (depends on 14)

The method of claim 14, wherein the CGJ layer is applied with heat treatment or ultraviolet (UV)/ozone treatment.

### Claim 16 (depends on 15)

The method of claim 15, wherein the heat treatment is performed at 150° C. to 250° C.

### Claim 17 (depends on 15)

The method of claim 15, wherein the heat treatment is performed for 10 minutes to 90 minutes.

### Claim 18 (depends on 15)

The method of claim 15, wherein the UV/ozone treatment is performed for 30 seconds to 5 minutes.