# US 11,309,486 B2 · Magnetoresistive random access memory with larger alignment window and method of manufacturing the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,309,486 B2
- Document ID: US11309486B2
- Status: Granted
- Kind: B2
- Application number: 16/719,992
- Filed: 2019-12-19
- Published: 2020-04-23
- Granted: 2022-04-19
- Earliest claimed: 2018-01-26
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Hung-Chan Lin; Yu-Ping Wang; Hung-Yueh Chen
- Web page: https://patentgrep.com/patent/US11309486B2

## CPC

- H10N 50/80: Constructional details
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A magnetoresistive random access memory (MRAM) is provided in the present invention, including a conductive plug with a protruding portion extending outwardly on one side and a notched portion concaving inwardly on the other side of the upper edge of conductive plug, and a memory cell with a bottom electrode electrically connecting with the conductive plug, a magnetic tunnel junction (MTJ) on the bottom electrode, and a top electrode on the magnetic tunnel junction, wherein the bottom surface of memory cell completely overlaps the top surface of conductive plug.

## Claims

### Claim 1

A method of manufacturing a magnetoresistive random access memory, comprising:
providing a substrate;
forming a conductive plug in said substrate, wherein said conductive plug has a protruding portion extending outwardly from the upper edge of said conductive plug;
forming a bottom electrode material layer, a magnetic tunnel junction material layer and a top electrode material layer on said substrate and said conductive plug; and
performing an anisotropic etch process to pattern said bottom electrode material layer, said magnetic tunnel junction material layer and said top electrode material layer, thereby forming a magnetic memory cell on said conductive plug, wherein said anisotropic etch process overetches said conductive plug and said substrate so that depressed regions are formed on said substrate at two sides of said magnetic memory cell.

### Claim 2 (depends on 1)

The method of manufacturing a magnetoresistive random access memory of claim 1, wherein said anisotropic etch process overetches said conductive plug to form a notched portion at one side of said conductive plug.

### Claim 3 (depends on 2)

The method of manufacturing a magnetoresistive random access memory of claim 2, wherein the surface of said notched portion of said magnetic memory cell and the surface of one of said depressed regions of said substrate are continuous curved surface.

### Claim 4 (depends on 1)

The method of manufacturing a magnetoresistive random access memory of claim 1, further comprising forming an overlying metal layer on said magnetic memory cell.

### Claim 5 (depends on 1)

The method of manufacturing a magnetoresistive random access memory of claim 1, further comprising forming a conformal liner layer on said magnetic memory cell and said substrate.