# US 11,309,477 B2 · Thermoelectric module

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- Number: US 11,309,477 B2
- Document ID: US11309477B2
- Status: Granted
- Kind: B2
- Application number: 16/474,266
- Filed: 2017-12-26
- Published: 2020-04-23
- Granted: 2022-04-19
- Earliest claimed: 2017-03-30
- Assignees: LG Chem, Ltd.
- Applicants: LG Chem, Ltd.
- Inventors: Su Jin Kim; Il Ha Lee; Pum Suk Park; Hyungju Oh; Dong Sik Kim; Byung Kyu Lim; Ki Hwan Kim; Cheol Hee Park
- Web page: https://patentgrep.com/patent/US11309477B2

## CPC

- H10N 10/854: comprising only metals (H10N10/852, H10N10/853 take precedence)
- H10N 10/817: the junction being non-separable, e.g. being cemented, sintered or soldered
- H10N 10/82: Interconnections
- H10N 10/8556: {comprising compounds containing germanium or silicon}
- H10N 10/01: Manufacture or treatment
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer. The module prevents heat diffusion of the material of the joining layer, preventing the oxidation and deformation of the thermoelectric element under high temperature environment, and exhibiting improved operational stability due to excellent adhesion to a thermoelectric element.

## Claims

### Claim 1

A thermoelectric module comprising:
at least a first and a second thermoelectric element comprising a thermoelectric semiconductor;
an electrode connecting the first and second thermoelectric elements;
at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and
at least a first and a second barrier layer comprising an alloy comprising Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer;
wherein the thermoelectric element comprises a Bi—Te based thermoelectric semiconductor; and
wherein the alloy comprises Cu in a content of 10 to 50 atom %, based on a total content of metal atoms and comprises Mo and Ti at an atomic ratio of 4:1 to 1:1.

### Claim 2 (depends on 1)

The thermoelectric module according to claim 1, wherein a thickness of the barrier layer is 100 nm to 200 μm.

### Claim 3 (depends on 1)

The thermoelectric module according to claim 1, wherein the first and second joining layer comprise a solder.

### Claim 4 (depends on 1)

A method for manufacturing a thermoelectric module according to claim 1 comprising the steps of:
forming a barrier layer comprising an alloy comprising Cu, Mo and Ti, on at least one side of a thermoelectric element; and
positioning a metal paste for forming a joining layer on the barrier layer, and then, joining the thermoelectric element having the barrier layer and joining layer formed thereon with an electrode, wherein joining layer faces the electrode.

### Claim 5 (depends on 4)

The method for manufacturing a thermoelectric module according to claim 4, wherein the formation of the barrier layer is conducted by sputtering, deposition, ion plating, plating or sintering.

### Claim 6 (depends on 4)

The method for manufacturing a thermoelectric module according to claim 4, wherein the joining is conducted by soldering or sintering.