# US 11,309,462 B2 · Semiconductor light emitting devices including superstrates with patterned surfaces > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,462 B2 - Document ID: US11309462B2 - Status: Granted - Kind: B2 - Application number: 16/390,714 - Filed: 2019-04-22 - Published: 2019-10-24 - Granted: 2022-04-19 - Earliest claimed: 2018-04-23 - Assignees: Cree Led, Inc. - Applicants: CreeLED, Inc. - Inventors: Erin Welch; Paul Thomas Fini; Eric Tarsa; Kenneth Morgan Davis - Web page: https://patentgrep.com/patent/US11309462B2 ## CPC - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/8515: {not being in contact with the bodies} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/855: Optical field-shaping means, e.g. lenses - H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A semiconductor light emitting device includes a light emitting diode (LED) chip, a recipient luminophoric medium on the LED chip, a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned surface that is configured to reduce a variation in a color point of a light emitted by the semiconductor light emitting device as a function of an angle off an optical axis of the LED chip. ## Claims ### Claim 1 A semiconductor light emitting device comprising: a light emitting diode (LED) chip; a recipient luminophoric medium on the LED chip, wherein the recipient luminophoric medium comprises a phosphor material and a binder material and is configured to absorb light of a first color that is emitted by the LED chip and emit light of a second color, different from the first color; and a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned surface that is configured to reduce a variation in a color point of a light emitted by the semiconductor light emitting device as a function of an angle off an optical axis of the LED chip, wherein the patterned surface of the patterned superstrate is on a side of the patterned superstrate that is facing the recipient luminophoric medium. ### Claim 2 (depends on 1) The semiconductor light emitting device of claim 1, wherein the patterned surface comprises a plurality of optical elements. ### Claim 3 (depends on 2) The semiconductor light emitting device of claim 2, wherein the plurality of optical elements are configured to reduce an amount of light emitted by the semiconductor light emitting device while reducing a variation in a color point of the light emitted by the semiconductor light emitting device as a function of viewing angle. ### Claim 4 (depends on 2) The semiconductor light emitting device of claim 2, wherein at least one of the plurality of optical elements comprises a convex protrusion. ### Claim 5 (depends on 2) The semiconductor light emitting device of claim 2, wherein at least one of the plurality of optical elements comprises a concave indentation. ### Claim 6 (depends on 2) The semiconductor light emitting device of claim 2, wherein a height of at least one of the plurality of optical elements is between 1 and three micrometers (μm) and a width of the at least one of the plurality of optical elements is between two and four μm. ### Claim 7 (depends on 1) The semiconductor light emitting device of claim 1, further comprising an air gap between the patterned superstrate and the recipient luminophoric medium. ### Claim 8 (depends on 1) The semiconductor light emitting device of claim 1, wherein the patterned superstrate comprises a first patterned superstrate, and wherein the semiconductor light emitting device further comprises a second superstrate on the first patterned superstrate and between the first patterned superstrate and the recipient luminophoric medium, the second superstrate having a major surface adjacent the patterned surface of the first patterned superstrate. ### Claim 9 (depends on 1) The semiconductor light emitting device of claim 1, wherein the patterned surface is configured to reduce the variation in both a ccx and ccy coordinate of the light emitted by the semiconductor light emitting device to within 0.01 for substantially all viewing angles within 40 degrees of an optical axis that extends through the LED chip and that is normal to a major surface of the LED chip. ### Claim 10 A semiconductor light emitting device comprising: a light emitting diode (LED) chip; and a chip cover mounted directly on the LED chip, the chip cover comprising: a patterned superstrate that comprises a plurality of optical elements; and a recipient luminophoric medium on the patterned superstrate, wherein the recipient luminophoric medium is between the LED chip and the patterned superstrate, wherein the recipient luminophoric medium comprises a phosphor material and a binder material and is configured to absorb light of a first color that is emitted by the LED chip and emit light of a second color, different from the first color, and wherein the plurality of optical elements extend from a side of the patterned superstrate that is facing the recipient luminophoric medium. ### Claim 11 (depends on 10) The semiconductor light emitting device of claim 10, wherein at least one of the plurality of optical elements comprises a convex protrusion. ### Claim 12 (depends on 10) The semiconductor light emitting device of claim 10, further comprising an air gap between the patterned superstrate and the recipient luminophoric medium. ### Claim 13 (depends on 10) The semiconductor light emitting device of claim 10, wherein the plurality of optical elements are configured to reduce an amount of light emitted by the semiconductor light emitting device while reducing a variation in a color point of light emitted by the semiconductor light emitting device as a function of viewing angle. ### Claim 14 (depends on 10) The semiconductor light emitting device of claim 10, wherein the patterned superstrate is configured to reduce a variation in both a ccx and ccy coordinate of light emitted by the semiconductor light emitting device to within 0.01 for substantially all viewing angles within 40 degrees of an optical axis that extends through the LED chip and that is normal to a major surface of the LED chip. ### Claim 15 (depends on 4) The semiconductor light emitting device of claim 4, wherein the convex protrusion comprises a non-linear sidewall extending from a base of the convex protrusion to an upper portion of the convex protrusion. ### Claim 16 (depends on 6) The semiconductor light emitting device of claim 6, wherein a pitch of the plurality of optical elements is between 0.5 to 10 times the width of a respective one of the plurality of optical elements. ### Claim 17 (depends on 2) The semiconductor light emitting device of claim 2, wherein the patterned surface is a first patterned surface, wherein the patterned superstrate comprises a second patterned surface on an opposite side of the patterned superstrate from the first patterned surface, and wherein the plurality of optical elements comprises first optical elements on the first patterned surface and second optical elements on the second patterned surface. ### Claim 18 (depends on 1) The semiconductor light emitting device of claim 1, wherein the patterned superstrate directly contacts the recipient luminophoric medium. ### Claim 19 (depends on 8) The semiconductor light emitting device of claim 8, wherein the first patterned superstrate comprises a plurality of first optical elements, and wherein the second superstrate comprises a second patterned superstrate comprising a plurality of second optical elements. ### Claim 20 (depends on 8) The semiconductor light emitting device of claim 8, wherein the first patterned superstrate comprises a first index of refraction, and wherein the second superstrate comprises a second index of refraction, different from the first index of refraction. ### Claim 21 A semiconductor light emitting device comprising: a light emitting diode (LED) chip comprising a light-emitting surface; a recipient luminophoric medium on the LED chip, wherein the recipient luminophoric medium comprises a phosphor material and a binder material and is configured to absorb light of a first color that is emitted by the LED chip and emit light of a second color, different from the first color; an adhesive layer between the recipient luminophoric medium and the LED chip; and a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising: a first major surface that is facing the recipient luminophoric medium: a second major surface that is on an opposite side of the patterned superstrate from the first major surface; and a plurality of optical elements between, in a direction normal to the light-emitting surface of the LED chip, the second major surface of the patterned superstrate and the recipient luminophoric medium. ### Claim 22 (depends on 21) The semiconductor light emitting device of claim 21, wherein the plurality of optical elements are internal to the patterned superstrate between the first major surface and the second major surface.