# US 11,309,458 B2 · Light-emitting device and display device using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,458 B2 - Document ID: US11309458B2 - Status: Granted - Kind: B2 - Application number: 16/878,215 - Filed: 2020-05-19 - Published: 2020-09-03 - Granted: 2022-04-19 - Earliest claimed: 2017-11-23 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: Taeil Jung; Il-Soo Kim; YongSeok Kwak - Web page: https://patentgrep.com/patent/US11309458B2 ## CPC - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10W 90/00: Package configurations - H10H 20/032: {of electrodes} - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light-emitting device and a display device using the same. The light-emitting device improves the reliability of a process of disposing light-emitting devices. The light-emitting device is configured to ensure electrical connections even if the light-emitting device is inverted while being disposed on a substrate. The light-emitting device includes an n-type semiconductor layer and a p-type semiconductor layer. N-type electrodes and p-type electrodes are disposed on both sides of top and bottom surfaces of the light-emitting device. Contact holes are provided to electrically connect one of the n-type electrodes to the n-type semiconductor layer and one of the p-type electrodes to the p-type semiconductor layer. When the light-emitting device is inverted while being disposed on a substrate, the light-emitting device operates ordinarily, thereby reducing the defect rate of a display device. ## Claims ### Claim 1 A light-emitting device, comprising: a p-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially layered on one another; at least one p-type electrode disposed on the p-type semiconductor layer; and an at least one n-type electrode disposed on the n-type semiconductor layer, wherein the p-type semiconductor layer comprises a first p-type semiconductor layer, a second p-type semiconductor layer, and a first wall by which the first and second p-type semiconductor layers are divided from each other, the n-type semiconductor layer comprises a first n-type semiconductor layer, a second n-type semiconductor layer, and a second wall by which the first and second n-type semiconductor layers are divided from each other, the second p-type semiconductor layer has at least one first contact hole, the second n-type semiconductor layer has at least one second contact hole, the at least one p-type electrode is insulated from the second p-type semiconductor layer, and is electrically connected to the second n-type semiconductor layer through the first contact hole, and the at least one n-type electrode is insulated from the second n-type semiconductor layer, and is electrically connected to the second p-type semiconductor layer through the second contact hole. ### Claim 2 (depends on 1) The light-emitting device according to claim 1, further comprising insulating films disposed in the first contact hole and the second contact hole, the insulating films being made of the same material as the first wall and the second wall. ### Claim 3 (depends on 2) The light-emitting device according to claim 2, wherein the at least one p-type electrode is electrically connected to the second n-type semiconductor layer through a first inner electrode located in the first contact hole. ### Claim 4 (depends on 2) The light-emitting device according to claim 2, wherein the at least one n-type electrode is electrically connected to the second p-type semiconductor layer through a second inner electrode located in the second contact hole. ### Claim 5 (depends on 2) The light-emitting device according to claim 2, wherein the insulating films is further disposed between the p-type electrode and the second p-type semiconductor layer and between the n-type electrode and the second n-type semiconductor layer. ### Claim 6 (depends on 1) The light-emitting device according to claim 1, wherein the at least one n-type electrode comprises a first n-type electrode and a second n-type electrode, the first n-type electrode being electrically connected to the first n-type semiconductor layer, and the second n-type electrode being electrically insulated from the second n-type semiconductor layer. ### Claim 7 (depends on 1) The light-emitting device according to claim 1, wherein a part of the n-type electrode is disposed on an area where the first n-type semiconductor layer is disposed and the other part of the n-type electrode is disposed on an area where the second n-type semiconductor layer is disposed. ### Claim 8 (depends on 1) The light-emitting device according to claim 1, wherein a portion of at least one of the first wall and the second wall is disposed inside the active layer. ### Claim 9 (depends on 1) The light-emitting device according to claim 1, wherein at least one of the first wall and the second wall pass through the active layer. ### Claim 10 (depends on 1) The light-emitting device according to claim 1, wherein a portion of the active layer is separated by the first wall and the second wall. ### Claim 11 (depends on 1) The light-emitting device according to claim 1, wherein a portion of the first wall and a portion of the second wall are overlapped laterally.