# US 11,309,457 B2 · Semiconductor light-emitting element

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- Number: US 11,309,457 B2
- Document ID: US11309457B2
- Status: Granted
- Kind: B2
- Application number: 16/068,081
- Filed: 2017-01-05
- Published: 2020-09-10
- Granted: 2022-04-19
- Earliest claimed: 2016-01-05
- Assignees: Semicon Light Co., Ltd.
- Applicants: Semicon Light Co., Ltd.
- Inventors: Soo Kun Jeon; Geun Mo Jin; Jun Chun Park; Yeon Ho Jeong; Il Gyun Choi
- Web page: https://patentgrep.com/patent/US11309457B2

## CPC

- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/8252: {characterised by the dopants}
- H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer}
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10H 20/032: {of electrodes}
- H10H 20/034: {of coatings}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

## Claims

### Claim 1

A semiconductor light emitting device comprising:
a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination;
a non-conductive reflective film formed over the plurality of semiconductor layers to reflect the light generated by the active layer towards the first semiconductor layer;
an insulating layer formed on the non-conductive reflective film;
a first electrode part, which is electrically connected to the first semiconductor layer; and
a second electrode part, which is electrically connected to the second semiconductor layer;
wherein the active layer is provided on the first semiconductor layer and the second semiconductor layer is provided on the active layer;
wherein the first electrode part includes a first lower electrode formed under the non-conductive reflective film and electrically connected to the first semiconductor layer, one or more first connection electrodes formed between the non-conductive reflective film and the insulating layer, and a first bonding pad formed on the insulating layer;
wherein the second electrode part includes a second lower electrode formed under the non-conductive reflective film and electrically connected to the second semiconductor layer, one or more second connection electrodes formed between the non-conductive reflective film and the insulating layer, and a second bonding pad formed on the insulating layer;
wherein the one or more first connection electrodes and the one or more second connection electrodes are in contact with the non-conductive reflective film;
wherein the non-conductive reflective film comprises a DBR (Distributed Bragg Reflector);
wherein the insulating layer is formed of a dielectric;
wherein the one or more first connection electrodes are extended through the non-conductive reflective film for electrical connection to the first lower electrode;
wherein the one or more second connection electrodes are extended through the non-conductive reflective film for electrical connection to the second lower electrode;
wherein the one or more first connection electrodes include a reflective metal;
wherein the one or more second connection electrodes include a reflective metal; and
wherein the non-conductive reflective film is covered and in contact with one of the one or more first connection electrodes and the one or more second connection electrodes by at least 50% as shown in a plane view.

### Claim 2 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the non-conductive reflective film is covered and in contact with the one or more second connection electrodes by at least 50% as shown in a plane view.

### Claim 3 (depends on 1)

The semiconductor light emitting device of according to claim 1, wherein the at least one of the first and second electrode parts comprises a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, and the finger electrode and one of the one or more first connection electrodes and the one or more second connection electrodes are electrically connected.

### Claim 4 (depends on 2)

The semiconductor light emitting device according to claim 2,
wherein the one or more second connection electrodes are comprised of a single second connection electrode;
wherein the single second connection electrode is provided with a plurality of openings; and
wherein the plurality of islands are provided in the plurality of openings, respectively.

### Claim 5 (depends on 1)

The semiconductor light emitting device according to claim 1,
wherein one of the one or more first connection electrodes and the one or more second connection electrodes is comprised of a plurality of islands;
wherein the other of the one or more first connection electrodes and the one or more second connection electrodes is comprised of a single connection electrode including a plurality of openings; and
wherein the plurality of islands are provided in the plurality of openings, respectively.

### Claim 6 (depends on 5)

The semiconductor light emitting device according to claim 5, wherein the non-conductive reflective film is covered with the plurality of islands by at least 50% as shown in a plane view.

### Claim 7 (depends on 6)

The semiconductor light emitting device according to claim 6, wherein the one or more first connection electrodes are comprised of the plurality of islands.