# US 11,309,450 B2 · Hybrid semiconductor photodetector assembly > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,450 B2 - Document ID: US11309450B2 - Status: Granted - Kind: B2 - Application number: 16/579,428 - Filed: 2019-09-23 - Published: 2020-06-25 - Granted: 2022-04-19 - Earliest claimed: 2018-12-20 - Assignees: Analog Devices, Inc. - Applicants: Analog Devices, Inc. - Inventors: Mohamed Azize - Web page: https://patentgrep.com/patent/US11309450B2 ## CPC - H10F 30/28: the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors - H10F 30/2877: {Field-effect phototransistors having PN heterojunction gates} - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10F 30/222: the potential barrier being a PN heterojunction - H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP} - H10F 71/1278: {comprising nitrides, e.g. GaN} - H10F 77/1246: {III-V nitrides, e.g. GaN} - H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP} - Y02E 10/544: Solar cells from Group III-V materials - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract An inexpensive IR photodetector assembly that can provide high performance in SWIR applications, such as LIDAR. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor. The hybrid photodetector can be composed of one or more absorber layer materials from a first semiconductor family, e.g., p-type InGaAs, laying on one or more wide-band gap semiconductor transducer layer materials from a second semiconductor family, e.g., aluminum gallium nitride (AlGaN) and gallium nitride (GaN), or AlGaN/n-GaN. As such, the absorber layer material and the wide band gap materials can be from two different semiconductor families, making the IR photodetector a hybrid of semiconductor families. After shining IR light onto the absorber layer material, the photo-generated electron-hole pairs can be collected as photocurrent in the photo-voltaic mode. ## Claims ### Claim 1 A semiconductor photodetector assembly configured to operate in response to light received at one or more input wavelengths, the assembly comprising: a semiconductor absorber layer material of the semiconductor photodetector assembly, the semiconductor absorber layer material configured to receive the light at the one or more input wavelengths and generate electron-hole pairs, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes material from a first semiconductor family; a first wide band gap semiconductor transducer layer material coupled to the semiconductor absorber layer material of the semiconductor photodetector assembly, wherein the first transducer layer material is from a second semiconductor family different from the first semiconductor family; a second transducer layer material coupled between the first transducer layer material and the semiconductor absorber layer material of the semiconductor photodetector assembly; a first contact material coupled to an interface between the first transducer layer material and the second transducer layer; a second contact material spaced apart from the first contact material, the second contact material coupled to the interface, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly extends partially between the first contact material and the second contact material such as to avoid electrical conduction between the first contact material and the second contact material, wherein, in a first state, a discontinuous two-dimensional electron gas (2DEG) channel is formed between the first contact material and the second contact material and at the interface between the first transducer layer material and the second transducer layer material, wherein a discontinuity in the 2DEG channel is below and aligned with the semiconductor absorber layer material of the semiconductor photodetector assembly, and wherein, in a second state and in response to the light received by the semiconductor absorber layer material of the semiconductor photodetector assembly at the one or more input wavelengths, the first transducer layer material is configured to collect electrons from the semiconductor absorber layer material of the semiconductor photodetector assembly and form a continuous 2DEG channel between the first contact material and the second contact material. ### Claim 2 (depends on 1) The assembly of claim 1, wherein the one or more input wavelengths include infrared (IR) light. ### Claim 3 (depends on 2) The assembly of claim 2, wherein the one or more input wavelengths include wavelengths of 1.5 micrometers and greater. ### Claim 4 (depends on 1) The assembly of claim 1, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes gallium arsenide and the first transducer layer material includes gallium nitride. ### Claim 5 (depends on 4) The assembly of claim 4, wherein the semiconductor absorber layer of the semiconductor photodetector assembly further includes indium. ### Claim 6 (depends on 4) The assembly of claim 4, wherein the second transducer layer material further includes aluminum. ### Claim 7 (depends on 6) The assembly of claim 6, wherein the second transducer layer material includes gallium nitride, the assembly further comprising: a substrate material coupled to the first transducer layer material. ### Claim 8 (depends on 1) The assembly of claim 1, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes gallium arsenide and the first transducer layer material does not include gallium arsenide. ### Claim 9 (depends on 1) The assembly of claim 1, further comprising: a first contact material coupled to an interface between the first transducer layer material and a second transducer layer; a second contact material spaced apart from the first contact material, the second contact material coupled to the interface, wherein the 2DEG channel includes a plurality of interdigitated 2DEG channels extending partially from one of the first contact material and the second contact material to the other of the first contact material and the second contact material. ### Claim 10 (depends on 1) The assembly of claim 1, wherein the photodetector assembly includes a photodiode. ### Claim 11 (depends on 1) The assembly of claim 1, wherein the photodetector assembly includes a phototransistor. ### Claim 12 (depends on 1) The assembly of claim 1, wherein the photodetector assembly includes a photodiode and a phototransistor. ### Claim 13 (depends on 1) The assembly of claim 1, further comprising a back barrier layer material coupled between the first transducer layer material and a substrate layer. ### Claim 14 (depends on 13) The assembly of claim 13, wherein the back barrier layer material includes aluminum nitride. ### Claim 15 A method of forming a semiconductor photodetector assembly configured to receive light at one or more wavelengths, the method comprising: coupling a first wide band gap semiconductor transducer layer material and a second transducer layer material to a substrate material, wherein the first transducer layer material is from a first semiconductor family; coupling a first contact material to an interface between the first transducer layer material and the second transducer layer; coupling a second contact material to the interface, the second contact material spaced apart from the first contact material; coupling a semiconductor absorber layer material of the semiconductor photodetector assembly to the second transducer layer material, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes material from a second semiconductor family different from the first semiconductor family, and wherein the semiconductor absorber layer material of the semiconductor photodetector assembly extends partially between the first contact material and the second contact material such as to avoid electrical conduction between the first contact material and the second contact material, in a first state, forming a discontinuous two-dimensional electron gas (2DEG) channel between the first contact material and the second contact material and at the interface between the first transducer layer material and the second transducer layer material, wherein a discontinuity in the 2DEG channel is below and aligned with the semiconductor absorber layer material of the semiconductor photodetector assembly, and in a second state and in response to the light received by the semiconductor absorber layer material of the semiconductor photodetector assembly at the one or more input wavelengths, forming a continuous 2DEG channel between the first contact material and the second contact material. ### Claim 16 (depends on 15) The method of claim 15, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes gallium arsenide and the first transducer layer material includes gallium nitride. ### Claim 17 (depends on 16) The method of claim 16, wherein the semiconductor absorber layer of the semiconductor photodetector assembly further includes indium. ### Claim 18 (depends on 16) The method of claim 16, wherein the first transducer layer material further includes aluminum. ### Claim 19 A semiconductor photodetector assembly configured to operate in response to light received at one or more input wavelengths, the assembly comprising: a semiconductor absorber layer material of the semiconductor photodetector assembly configured to receive the light at the one or more input wavelengths and generate electron-hole pairs, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes material from a first semiconductor family; and a wide band gap semiconductor transducer layer material of the semiconductor photodetector assembly coupled to the semiconductor absorber layer material of the semiconductor photodetector assembly, wherein the transducer layer material is configured to collect electrons from the semiconductor absorber layer material of the semiconductor photodetector assembly and form a two-dimensional electron gas (2DEG) channel, and wherein the transducer layer material is from a second semiconductor family different from the first semiconductor family, wherein the transducer layer material is a first transducer layer material, the assembly further comprising: a first contact material coupled to an interface between the first transducer layer material and a second transducer layer; a second contact material spaced apart from the first contact material, the second contact material coupled to the interface, wherein the 2DEG channel includes a plurality of interdigitated 2DEG channels extending partially from one of the first contact material and the second contact material to the other of the first contact material and the second contact material. ### Claim 20 (depends on 19) The assembly of claim 19, wherein the photodetector assembly includes one or both of a photodiode and a phototransistor. ### Claim 21 (depends on 19) The assembly of claim 19, wherein the one or more input wavelengths include infrared (IR) light.