# US 11,309,446 B2 · Resistive switching element and photovoltaic device including the same

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- Number: US 11,309,446 B2
- Document ID: US11309446B2
- Status: Granted
- Kind: B2
- Application number: 16/434,685
- Filed: 2019-06-07
- Published: 2019-12-12
- Granted: 2022-04-19
- Earliest claimed: 2018-06-08
- Assignees: Ewha University-Industry Collaboration Foundation
- Applicants: Ewha University—Industry Collaboration Foundation
- Inventors: William Jo; Hye Jin Jin
- Web page: https://patentgrep.com/patent/US11309446B2

## CPC

- H10F 10/10: having potential barriers
- H10D 62/80: characterised by the materials
- H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers
- H10F 30/10: the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F 77/12: Active materials
- Y02E 10/50: Photovoltaic [PV] energy
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The present disclosure relates to a resistive switching element in which polarization of a ferroelectric material layer and electron-hole separation phenomenon of a two dimensional semiconducting material layer are combined to induce resistive switching phenomenon, and a photovoltaic device such as a solar cell, including the resistive switching element.

## Claims

### Claim 1

A resistive switching element, comprising:
a bottom electrode formed on a substrate;
an oriented ferroelectric material layer formed on the bottom electrode;
a two dimensional semiconducting material layer formed on the ferroelectric material layer; and
a top electrode formed on the two dimensional semiconducting material layer,
wherein polarization of the ferroelectric material layer and electron-hole separation phenomenon of the two dimensional semiconducting material layer are combined to induce resistive switching phenomenon,
wherein the ferroelectric material layer and the two dimensional semiconducting material layer are in direct contact,
wherein the ferroelectric material layer has a crystal form of a hexagonal structure grown in (111) or (001) direction,
wherein the ferroelectric material layer is poled upward or downward, and
wherein the substrate is a (111)-oriented monocrystalline substrate or a (001)-oriented monocrystalline substrate.

### Claim 2 (depends on 1)

The resistive switching element according to claim 1,
wherein the ferroelectric material includes PbTiO3, BaTiO3, BiFeO3, PbZrxTi1-xO3 (PZT), or LiNbO3.

### Claim 3 (depends on 1)

The resistive switching element according to claim 1,
wherein the two dimensional semiconducting material includes MoS2, MoSe2, WSe2, ReS2, ReSe2, MoTe2, WS2, or WTe2.

### Claim 4 (depends on 1)

The resistive switching element according to claim 1,
wherein the bottom electrode includes a metal or a conductive oxide, and is a transparent or opaque electrode.

### Claim 5 (depends on 1)

A photovoltaic device, comprising:
a resistive switching element according to claim 1, wherein:
the substrate is transparent, and
the bottom electrode is transparent.

### Claim 6 (depends on 5)

The photovoltaic device according to claim 5,
wherein electron-hole separation formed in the two dimensional semiconducting material layer increases by polarization of the ferroelectric material layer upon light irradiation.