# US 11,309,439 B2 · Package structure for semiconductor device, and semiconductor device

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- Number: US 11,309,439 B2
- Document ID: US11309439B2
- Status: Granted
- Kind: B2
- Application number: 16/970,793
- Filed: 2018-11-09
- Published: 2021-04-15
- Granted: 2022-04-19
- Earliest claimed: 2018-02-22
- Assignees: He Bei Sinopack Electronic Tech Co., Ltd.
- Applicants: He Bei Sinopack Electronic Tech Co., Ltd.
- Inventors: Yao Liu; Jun Li; Jing Zhao; Jing Sun; Bin Liang; Lin Feng Zhou; Di Gao
- Web page: https://patentgrep.com/patent/US11309439B2

## CPC

- H10F 77/93: {Interconnections}
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10F 77/60: Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
- H10W 76/153: having interconnections in passages through the insulating or insulated base
- H10W 76/18: Insulating materials, e.g. resins, glasses or ceramics
- H10W 76/60: Seals
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A package structure comprises a metal plate (20) where a slot is formed, a ceramic piece (60), and a metal heat sink (70) welded onto the back surface of the ceramic piece (60). The ceramic piece (60) and the metal heat sink (70) are vertically inserted into the slot and welded to the metal plate (20). A semiconductor and a matching circuit may be disposed on the metal heat sink (70). The ceramic piece (60) replaces a glass seal; metalized interconnection is provided inside the ceramic piece (60) for fabricating a metalized pattern having complex connection relations, and the electrical interconnection is more flexible. In the package structure, metalized wiring is carried out by using the ceramic piece. Compared with round lead machining, higher precision is achieved.

## Claims

### Claim 1

A package structure for a semiconductor device, comprising:
a metal plate having a first surface and a second surface opposite to each other, and a slot penetrating through the first surface and the second surface;
a ceramic piece for providing an internal and external electrical connection of the semiconductor device, an interconnected metalized pattern being arranged inside the ceramic piece; and
a metal heat sink, welded on a back surface of the ceramic piece and used for disposing the semiconductor device and an associated circuit, wherein:
the ceramic piece and the metal heat sink are vertically inserted into the slot and hermetically connected with the metal plate, and wherein:
on the metal plate, a recess is provided along an outer periphery of the slot, and the recess is used for limiting welding flux;
or a groove is arranged on a peripheral wall, corresponding to the slot, of the ceramic piece and the metal heat sink, and the groove is used for limiting welding flux.

### Claim 2 (depends on 1)

The package structure of claim 1, further comprising:
a cap connected to the first surface or the second surface of the metal plate for sealing the semiconductor device.

### Claim 3 (depends on 2)

The package structure of claim 2, wherein a lens corresponding to an optical path of the semiconductor device is provided on the cap.

### Claim 4 (depends on 1)

The package structure of claim 1, wherein the ceramic piece and the metal heat sink are welded to the metal plate.

### Claim 5 (depends on 1)

The package structure of claim 1, wherein the first surface and the second surface of the metal plate are circular, and the metal plate is formed of steel No. 10, stainless steel or kovar metal.

### Claim 6 (depends on 1)

The package structure of claim 1, wherein the ceramic piece is a multilayer alumina ceramic.

### Claim 7 (depends on 6)

The package structure of claim 6, wherein the ceramic piece has a rectangular cross section.

### Claim 8 (depends on 1)

The package structure of claim 1, wherein a shape and a size of the slot are adapted to a cross section of the ceramic piece and the metal heat sink which are inserted into the slot.

### Claim 9 (depends on 1)

The package structure of claim 1, wherein the metal heat sink is made of tungsten copper, molybdenum copper or copper.

### Claim 10

A semiconductor structure configured to accommodate a semiconductor device, the semiconductor structure comprising:
a metal plate, having a first surface and a second surface opposite to each other and a slot penetrating through the first surface and the second surface;
a ceramic piece, for providing an internal and external electrical connection of the semiconductor device, an interconnected metalized pattern being arranged inside the ceramic piece; and
a metal heat sink, welded on a back surface of the ceramic piece and used for disposing the semiconductor device and an associated circuit, wherein:
the ceramic piece and the metal heat sink are vertically inserted into the slot and hermetically connected with the metal plate, and wherein:
on the metal plate, a recess is provided along an outer periphery of the slot, and the recess is used for limiting welding flux;
or a groove is arranged on a peripheral wall, corresponding to the slot, of the ceramic piece and the metal heat sink, and the groove is used for limiting welding flux.