# US 11,309,437 B2 · Vertical Schottky barrier diodes using two-dimensional layered semiconductors and fabrication methods thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,437 B2 - Document ID: US11309437B2 - Status: Granted - Kind: B2 - Application number: 17/006,239 - Filed: 2020-08-28 - Published: 2021-03-04 - Granted: 2022-04-19 - Earliest claimed: 2019-08-28 - Assignees: Industry-Academic Cooperation Foundation, Yonsei University - Applicants: Industry-Academic Cooperation Foundation, Yonsei University - Inventors: Seongil Im; Sung Jin Yang - Web page: https://patentgrep.com/patent/US11309437B2 ## CPC - H10D 8/60: Schottky-barrier diodes - H10D 8/051: {of Schottky diodes} - H10D 62/80: characterised by the materials - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10D 62/115: {Dielectric isolations, e.g. air gaps} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Provided are a vertical Schottky barrier diode using a two-dimensional layered semiconductor and a fabrication method thereof, the vertical Schottky barrier diode having excellent response characteristics in a high frequency region and capable of being directly fabricated from a material having a low melting point such as glass or plastic because its fabrication process is performed at a relatively low temperature. The vertical Schottky barrier diode includes: an ohmic contact layer formed of a metal; a two-dimensional layered semiconductor formed of two-dimensional transition metal dichalcogenides (TMDs) on one surface of the ohmic contact layer; a Schottky contact layer formed on one surface of the two-dimensional layered semiconductor; and a non-conductive layer formed on the other surface of the ohmic contact layer or one surface of the Schottky contact layer. ## Claims ### Claim 1 A vertical Schottky barrier diode comprising: an ohmic contact layer formed of a metal; a two-dimensional layered semiconductor formed of two-dimensional transition metal dichalcogenides (TMDs) on one surface of the ohmic contact layer; a Schottky contact layer formed on one surface of the two-dimensional layered semiconductor; a non-conductive layer formed on the other surface of the ohmic contact layer or one surface of the Schottky contact layer; and a non-conductive member formed on an edge of the one surface of the two-dimensional layered semiconductor and in surface contact with the two-dimensional layered semiconductor and the Schottky contact layer, wherein the two-dimensional layered semiconductor is formed to have a thickness of 10 nm or more, and the Schottky contact layer is formed only at a region where the ohmic contact layer is projected to the two-dimensional layered semiconductor. ### Claim 2 (depends on 1) The vertical Schottky barrier diode of claim 1, wherein the two-dimensional transition metal dichalcogenides (TMDs) forming the two-dimensional layered semiconductor contains any one selected from a group consisting of tungsten diselenide (WSe2), tungsten disulfide (WS2), molybdenum diselenide (MoSe2), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), rhenium diselenide (ReSe2) and rhenium disulfide (ReS2). ### Claim 3 (depends on 1) The vertical Schottky barrier diode of claim 1, wherein the Schottky contact layer is formed of a Schottky metal or a conductive transparent oxide film. ### Claim 4 (depends on 1) The vertical Schottky barrier diode of claim 1, wherein the non-conductive layer is formed of any one selected from glass, plastic and polyimide. ### Claim 5 (depends on 1) The vertical Schottky barrier diode of claim 1, wherein the non-conductive layer is formed of a transparent material or an opaque material. ### Claim 6 (depends on 1) The vertical Schottky barrier diode of claim 1, wherein the non-conductive layer is hard by being formed of a material having predetermined rigidity or more or is flexible by being formed of a material having elasticity. ### Claim 7 A fabrication method of a vertical Schottky barrier diode, comprising: a step A of forming an ohmic contact layer on one surface of a non-conductive layer using a metal or forming a Schottky contact layer on the one surface of the non-conductive layer; a step B of forming a two-dimensional layered semiconductor on one surface of the layer formed in the step A using two-dimensional transition metal dichalcogenides (TMDs), the two-dimensional layered semiconductor having a thickness of 10 nm or more; a step B-1 of forming a non-conductive member on an edge of the one surface of the two-dimensional layered semiconductor; and a step C of forming the layer not formed in the step A among the ohmic contact layer and the Schottky contact layer at a region where the layer formed in the step A is projected to the two-dimensional layered semiconductor, on one surface of the two-dimensional layered semiconductor formed in the step B. ### Claim 8 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein in the step A or C, the ohmic contact layer or the Schottky contact layer is formed using dry transfer, wet transfer, thin film deposition and patterning processes. ### Claim 9 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein in the step B, the two-dimensional layered semiconductor is formed by attaching the two-dimensional layered semiconductor attached to a surface of an adhesive member to the one surface of the layer formed in the step A, and then removing the adhesive member. ### Claim 10 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein in the step B-1, the non-conductive member is formed using a photoresist method. ### Claim 11 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein in the step B-1, the non-conductive member is formed using a photoresist method. ### Claim 12 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein the two-dimensional transition metal dichalcogenides (TMDs) forming the two-dimensional layered semiconductor contains any one selected from a group consisting of tungsten diselenide (WSe2), tungsten disulfide (WS2), molybdenum diselenide (MoSe2), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), rhenium diselenide (ReSe2) and rhenium disulfide (ReS2). ### Claim 13 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein the Schottky contact layer is formed of a Schottky metal or a conductive transparent oxide film. ### Claim 14 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein the non-conductive layer is formed of any one selected from glass, plastic and polyimide. ### Claim 15 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein the non-conductive layer is formed of a transparent material or an opaque material. ### Claim 16 (depends on 7) The fabrication method of a vertical Schottky barrier diode of claim 7, wherein the non-conductive layer is hard by being formed of a material having predetermined rigidity or more or is flexible by being formed of a material having elasticity.