# US 11,309,428 B2 · Transistor and manufacturing method thereof, display substrate and display device

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- Number: US 11,309,428 B2
- Document ID: US11309428B2
- Status: Granted
- Kind: B2
- Application number: 16/706,160
- Filed: 2019-12-06
- Published: 2020-08-27
- Granted: 2022-04-19
- Earliest claimed: 2019-02-26
- Assignees: Hefei Xinsheng Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd.
- Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd.; Boe Technology Group Co., Ltd.
- Inventors: Wei Song; Ce Zhao; Yuankui Ding; Ming Wang; Jun Liu; Yingbin Hu; Wei Li; Liusong Ni
- Web page: https://patentgrep.com/patent/US11309428B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 30/6758: {characterised by the insulating substrates}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.

## Claims

### Claim 1

A top gate metal oxide transistor, comprising:
a base substrate;
a light shielding layer on the base substrate, wherein an upper surface of the light shielding layer has a non-protruding region and a protruding region protruding from the non-protruding region;
a first insulation layer with an uniform thickness on the light shielding layer;
an active layer on the first insulation layer and covering both of the non-protruding region and the protruding region of the light shielding layer;
a gate insulating layer on the active layer; and
a gate electrode on the gate insulating layer,
wherein the active layer comprises a channel portion, and a first conductorized portion and a second conductorized portion on both sides of the channel portion, and the first conductorized portion and the second conductorized portion are formed by performing a conductorization process on an oxide semiconductor material of the active layer,
both of the first conductorized portion and the second conductorized portion are in the non-protruding region of the light shielding layer, the channel portion is in the protruding region of the light shielding layer, and lower surfaces of the first conductorized portion and the second conductorized portion are lower than a lower surface of the channel portion.

### Claim 2 (depends on 1)

The top gate metal oxide transistor according to claim 1, wherein the light shielding layer comprises a light shielding metal material.

### Claim 3 (depends on 1)

The top gate metal oxide transistor according to claim 1, further comprising:
a second insulating layer between a source electrode, a drain electrode and the gate electrode; wherein
the source electrode and the drain electrode are adjacent to the gate electrode distal to the active layer, and
the source electrode and the drain electrode are in a same layer.

### Claim 4 (depends on 1)

A display substrate comprising a transistor, wherein the transistor is according to claim 1.

### Claim 5 (depends on 4)

A display device comprising a display substrate, wherein the display substrate is according to claim 4.

### Claim 6

A method for manufacturing a top gate metal oxide transistor, comprising:
providing a base substrate;
forming a light shielding layer on the base substrate, wherein an upper surface of the light shielding layer has a non-protruding region and a protruding region protruding from the non-protruding region;
forming a first insulating layer with an uniform thickness on the light shielding layer;
forming an active layer on the first insulating laser to cover both of the non-protruding region and the protruding region of the tight shielding layer;
forming a gate insulating layer on the active layer; and
forming a gate electrode on the gate insulating laser,
wherein forming the active layer on the first insulating laser comprises:
performing a conductorization process on an oxide semiconductor material of the active layer, such that a channel portion of the active layer is formed in the protruding region of the light shielding layer and both of a first conductorized portion and a second conductorized portion are formed in the non-protruding region of the light shielding layer, and lower surfaces of the first conductorized portion and the second conductorized portion are lower than a lower surface of the channel portion.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the forming the active layer further comprises:
depositing the oxide semiconductor material on the the first insulating layer;
patterning the oxide semiconductor material through an exposure process, a development process and an etching process to form a pattern of the active layer;
forming a pattern of the gate insulating layer and a pattern of the gate electrode on the pattern of the active layer in the protruding region; and
conductorizing the pattern of the active layer in the non-protruding region by bombarding the pattern of the active layer in the non-protruding region using helium gas to form the active layer.