# US 11,309,415 B2 · Wide gap semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,415 B2 - Document ID: US11309415B2 - Status: Granted - Kind: B2 - Application number: 16/976,731 - Filed: 2018-03-29 - Published: 2020-12-31 - Granted: 2022-04-19 - Earliest claimed: 2018-03-29 - Assignees: Shindengen Electric Manufacturing Co., Ltd. - Applicants: Shindengen Electric Manufacturing Co., Ltd. - Inventors: Shunichi Nakamura - Web page: https://patentgrep.com/patent/US11309415B2 ## CPC - H10D 30/66: Vertical DMOS [VDMOS] FETs - H10D 84/143: {the built-in components being PN junction diodes} - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 8/60: Schottky-barrier diodes - H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) - H10D 30/603: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]} - H10D 30/637: {Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs} - H10D 30/64: Double-diffused metal-oxide semiconductor [DMOS] FETs - H10D 30/655: {having edge termination structures} - H10D 30/659: {having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells} - H10D 30/665: {having edge termination structures} - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 62/153: {Impurity concentrations or distributions} - H10D 64/647: {Schottky drain or source electrodes for IGFETs} - H10D 84/01: Manufacture or treatment - H10D 84/0158: {the components including FinFETs} - H10D 84/141: {VDMOS having built-in components} - H10D 84/144: {in antiparallel diode configurations} - H10D 84/146: {the built-in components being Schottky barrier diodes} - H10D 84/151: {LDMOS having built-in components} - H10D 84/153: {the built-in component being PN junction diodes} - H10D 84/154: {in antiparallel diode configurations} - H10D 84/156: {the built-in components being Schottky barrier diodes} - H10D 84/158: {the built-in components being breakdown diodes, e.g. Zener diodes} - H10D 84/221: {of only diodes} - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D 84/83: of only insulated-gate FETs [IGFET] - H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers} - H10D 62/8325: {Silicon carbide} - H10D 89/611: {using diodes as protective elements} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A wide gap semiconductor device has: a first MOSFET region (M0) having a first gate electrode 10 and a first source region 30 provided in a first well region 20 made of a second conductivity type; a second MOSFET region (M1) provided below a gate pad 100 and having a second gate electrode 110 and a second source region 130 provided in a second well region 120 made of the second conductivity type; and a built-in diode region electrically connected to the second gate electrode 110. The second source region 130 of the second MOSFET region (M1) is electrically connected to the gate pad 100. ## Claims ### Claim 1 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; a built-in diode region electrically connected to the second gate electrode; and a withstand voltage structure which surrounds all of the first MOSFET region, the second MOSFET region and the built-in diode region, wherein the second source region of the second MOSFET region is electrically connected to the gate pad. ### Claim 2 (depends on 1) The wide gap semiconductor device according to claim 1, further comprising a third MOSFET region having a third gate electrode electrically connected to the gate pad and a third source region provided in the second well region. ### Claim 3 (depends on 2) The wide gap semiconductor device according to claim 2, wherein the third MOSFET region is a planar MOSFET, and the third source region and a third drain region are provided in the second well region. ### Claim 4 (depends on 1) The wide gap semiconductor device according to claim 1, further comprising a diode pad connected to the second gate electrode, wherein the built-in diode region is electrically connected to the second gate electrode via the diode pad. ### Claim 5 (depends on 4) The wide gap semiconductor device according to claim 4, wherein the diode pad and the gate pad are electrically connected via a resistance part. ### Claim 6 (depends on 4) The wide gap semiconductor device according to claim 4, wherein the built-in diode region has a third upper well region made of a second conductivity type and provided below the diode pad, and a third lower well region provided below the third upper well region and having an impurity concentration higher than an impurity concentration of the third upper well region. ### Claim 7 (depends on 6) The wide gap semiconductor device according to claim 6, wherein the diode pad and the third upper well region form Schottky junction. ### Claim 8 (depends on 1) The wide gap semiconductor device according to claim 1, wherein a first connection region electrically connected to the second gate electrode is provided below the gate pad. ### Claim 9 (depends on 8) The wide gap semiconductor device according to claim 8, wherein the built-in diode region electrically connected to the first connection region is provided below the first connection region. ### Claim 10 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; and a built-in diode region electrically connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, and in a first well region at least a part of which is provided below the gate pad, a first protection diode region electrically connected to the source pad and the gate pad is provided. ### Claim 11 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; a built-in diode region electrically connected to the second gate electrode, and a diode pad connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, and in a second well region at least a part of which is provided below the diode pad, a second protection diode region electrically connected to the diode pad and the gate pad is provided. ### Claim 12 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; a built-in diode region electrically connected to the second gate electrode; and a diode pad connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, and in a first well region at least a part of which is provided below the diode pad, a second protection diode region electrically connected to the diode pad and the source pad is provided. ### Claim 13 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; a built-in diode region electrically connected to the second gate electrode; and a diode pad connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, and in a first well region at least a part of which is provided below the diode pad, a second protection diode region electrically connected to the diode pad and the source pad is provided. ### Claim 14 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; and a built-in diode region electrically connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, a first connection region electrically connected to the second gate electrode is provided below the gate pad, and in a second well region located below the gate pad, a resistance region having a low-concentration first conductivity type region electrically connected to the first connection region and the gate pad is provided. ### Claim 15 A wide gap semiconductor device comprising: a drift layer using a wide gap semiconductor material of a first conductivity type; a source pad; a first MOSFET region provided below the source pad and having a first gate electrode and a first source region provided in a first well region made of a second conductivity type; a gate pad; a second MOSFET region provided below the gate pad and having a second gate electrode and a second source region provided in a second well region made of a second conductivity type; and a built-in diode region electrically connected to the second gate electrode, wherein the second source region of the second MOSFET region is electrically connected to the gate pad, a first connection region electrically connected to the second gate electrode is provided below the gate pad, a second wiring layer electrically connected to the first connection region and the second gate electrode is provided between the source pad and the gate pad in an in-plane direction, the built-in diode region is electrically connected to the second gate electrode via the second wiring layer and the first connection region, and a second protection diode region electrically connected to the second wiring layer and the source pad is provided in a first well region at least a part of which is provided below the second wiring layer.