# US 11,309,406 B2 · Method of manufacturing an LDMOS device having a well region below a groove

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- Number: US 11,309,406 B2
- Document ID: US11309406B2
- Status: Granted
- Kind: B2
- Application number: 16/770,362
- Filed: 2018-12-05
- Published: 2021-06-10
- Granted: 2022-04-19
- Earliest claimed: 2017-12-06
- Assignees: Csmc Technologies Fab2 Co., Ltd.
- Applicants: Csmc Technologies Fab2 Co., Ltd.
- Inventors: Nailong He; Sen Zhang; Guangsheng Zhang; Yun Lan
- Web page: https://patentgrep.com/patent/US11309406B2

## CPC

- H10D 30/0287: {using recessing of the source electrodes}
- H10D 30/0289: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
- H10D 30/65: Lateral DMOS [LDMOS] FETs
- H10D 30/658: {having trench gate electrodes}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 64/516: {the thicknesses being non-uniform}
- H10P 76/408: {characterised by their sizes, orientations, dispositions, behaviours or shapes}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 10/012: {using local oxidation of silicon [LOCOS]}
- H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A manufacturing method of an LDMOS device comprises: obtaining a wafer formed with a doped region having a first conductivity type, wherein a top buried layer is formed inside the doped region having the first conductivity type, and a field oxide insulation layer structure is formed on the top buried layer; disposing a trench on the doped region having the first conductivity type, wherein the trench extends to the top buried layer and the field oxide insulation layer structure such that a portion of the top buried layer is removed; injecting an ion of a second conductivity type to form a well region below the trench; and forming a doped source region in the well region. The first conductivity type and the second conductivity type are opposite conductivity types.

## Claims

### Claim 1

A method of making a LDMOS device, comprising:
obtaining a wafer in which a first conductive type doped region is formed, a top buried layer is formed in the first conductive type doped region, and a field oxidation insulating layer structure is formed on the top buried layer;
opening a groove on the first conductive type doped region, the groove extending to the top buried layer and the field oxidation insulating layer structure to remove a part of the top buried layer;
injecting ions of a second conductive type to form a well region below the groove; and
forming a source doped region in the well region; the first conductive type and the second conductive type being opposite conductive types,
wherein the step of opening the groove on the first conductive type doped region is to etch using the field oxidation insulating layer structure as a hard mask.

### Claim 2 (depends on 1)

The method according to claim 1, wherein in the step of opening the groove on the first conductive type doped region, a formed bottom of the groove is lower than a bottom of the top buried layer.

### Claim 3 (depends on 2)

The method according to claim 2, wherein in the step of opening the groove on the first conductive type doped region, the formed bottom of the groove is lower than a PN junction formed by the top buried layer and the first conductive type doped region.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the step of obtaining a wafer in which a first conductive type doped region is formed, a top buried layer is formed in the first conductive type doped region, and a field oxidation insulating layer structure is formed on the top buried layer comprises:
forming the top buried layer in the first conductive type doped region;
forming the field oxidation insulating layer structure on the top buried layer, the field oxidation insulating layer structure partially covering the top buried layer, a section of the top buried layer at a position near the groove being exposed from under the field oxidation insulating layer structure.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the first conductive type is N-type, and the second conductive type is P-type.

### Claim 6 (depends on 1)

The method according to claim 1, wherein after the step of opening the groove on the first conductive type doped region, the method further comprises: forming a continuous gate oxide structure at the bottom of the groove and at a side wall of the groove near the top buried layer.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the gate oxide structure further extends to a part of a surface of the field oxidation insulating layer structure.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the step of forming the source doped region in the well region is to form a first conductive type source doped region and a second conductive type source doped region in the well region, the first conductive type source doped region being located closer to the top buried layer.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the method further comprises:
forming a drain doped region in the first conductive type doped region, the drain doped region and the source doped region being separated by the field oxidation insulating layer structure, the drain doped region having the first conductive type.