# US 11,309,392 B2 · Thin film transistor and method for manufacturing the same, and display panel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,392 B2 - Document ID: US11309392B2 - Status: Granted - Kind: B2 - Application number: 16/863,253 - Filed: 2020-04-30 - Published: 2021-01-07 - Granted: 2022-04-19 - Earliest claimed: 2019-07-02 - Assignees: Boe Technology Group Co., Ltd. - Applicants: BOE Technology Group Co., Ltd. - Inventors: Chunping Long; Hui Li - Web page: https://patentgrep.com/patent/US11309392B2 ## CPC - H10D 30/6729: {characterised by the electrodes} - G09G 3/3266: Details of drivers for scan electrodes - H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate} - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10D 30/6731: {Top-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 64/257: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)} - H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials} - H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/60: wherein the TFTs are in active matrices - G09G 2300/0809: Several active elements per pixel in active matrix panels - G09G 2310/0286: Details of a shift registers arranged for use in a driving circuit - H10K 59/1213: {the pixel elements being TFTs} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The present disclosure provides a thin film transistor, a display panel and a method for manufacturing the thin film transistor. The thin film transistor includes an active layer and a source-drain electrode layer, the source-drain electrode layer includes a first electrode having at least one first electrode strip and a second electrode having at least one second electrode strip, the at least one first electrode strip and the at least one second electrode strip are alternately arranged at intervals, and at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode, on the layer where the active layer is located. ## Claims ### Claim 1 A thin film transistor, comprising an active layer and a source-drain electrode layer, wherein the active layer is made of a semiconductor material, the source-drain electrode layer comprises a first electrode and a second electrode, the first electrode comprises at least one first electrode strip, the second electrode comprises at least one second electrode strip, the at least one first electrode strip and the at least one second electrode strip are alternately arranged at intervals, at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode, on the layer where the active layer is located; and/or at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the second electrode strip, which is proximal to the first electrode, and the first electrode, on the layer where the active layer is located. ### Claim 2 (depends on 1) The thin film transistor of claim 1, wherein the first electrode further comprises at least one first conductive connecting strip, the first electrode comprises a plurality of first electrode strips, and the plurality of first electrode strips of the first electrode are electrically coupled to each other by the first conductive connecting strip. ### Claim 3 (depends on 2) The thin film transistor of claim 2, wherein the second electrode comprises at least one second conductive connecting strip, the second electrode comprises a plurality of second electrode strips, and the plurality of second electrode strips of the second electrode are electrically coupled to each other by the at least one second conductive connecting strip; and the at least one first conductive connecting strip and the at least one second conductive connecting strip are arranged in parallel. ### Claim 4 (depends on 3) The thin film transistor of claim 3, wherein the at least one first conductive connecting strip comprises one first conductive connecting strip and the at least one second conductive connecting strip comprises two second conductive connecting strips; the two second conductive connecting strips are respectively arranged on two sides of the first conductive connecting strip; and the plurality of first electrode strips are arranged on two sides of the first conductive connecting strip, and the plurality of second electrode strips are respectively arranged on one side, facing the first conductive connecting strip, of the two second conductive connecting strips. ### Claim 5 (depends on 4) The thin film transistor of claim 4, wherein at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and its opposite second conductive connecting strip, on the layer where the active layer is located; and/or at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the second electrode strip, which is proximal to the first electrode, and the first conductive connecting strip, on the layer where the active layer is located. ### Claim 6 (depends on 5) The thin film transistor of claim 5, wherein a region of the layer where the active layer is located is provided with an insulating material, the region is within a first predetermined distance from an orthographic projection of at least one of two sides of the first conductive connecting strip on the layer where the active layer is located, and the first predetermined distance is a distance between a free end of the second electrode strip and its opposite first conductive connecting strip; and/or a region of the layer where the active layer is located is provided with an insulating material, the region is within a second predetermined distance from an orthographic projection of a side, proximal to the first conductive connecting strip, of at least one of the two conductive connecting strips on the layer where the active layer is located, and the second predetermined distance is a distance between a free end of the first electrode strip and its opposite second conductive connecting strip. ### Claim 7 (depends on 6) The thin film transistor of claim 6, further comprising a conductive strip, wherein the two second conductive connecting strips are electrically coupled to the conductive strip on one side of a direction in which the two second conductive connecting strips extend. ### Claim 8 (depends on 2) The thin film transistor of claim 2, wherein the first electrode comprises one first conductive connecting strip and four first electrode strips, two first electrode strips of the four first electrode strips are arranged on one side of the first conductive connecting strip, and the other two first electrode strips of the four first electrode strips are arranged on the other side of the first conductive connecting strip; and the second electrode comprises two second electrode strips, the two second electrode strips are respectively arranged on two sides of the first conductive connecting strip, and each of the two second electrode strips is inserted between the two first electrode strips on its side. ### Claim 9 (depends on 8) The thin film transistor of claim 8, wherein a part of the layer where the active layer is located corresponding to an orthographic projection of at least a portion of a region between the second electrode strip and the first conductive connecting strip thereon is provided with an insulating material. ### Claim 10 (depends on 1) The thin film transistor of claim 1, wherein the orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode, on the layer where the active layer is located and/or the orthographic projection of at least a part of a region between a free end of the second electrode strip, which is proximal to the first electrode, and the first electrode, on the layer where the active layer is located is a rectangular orthographic projection. ### Claim 11 (depends on 10) The thin film transistor of claim 10, further comprising a gate electrode, an orthogonal projection of which on the layer where the active layer is located partially overlaps with the rectangular orthogonal projection. ### Claim 12 (depends on 1) The thin film transistor of claim 1, further comprising a gate insulating layer of a same material as the insulating material. ### Claim 13 (depends on 1) A display panel, comprising a plurality of thin film transistors, wherein at least one thin film transistor of the plurality of thin film transistors is the thin film transistor of claim 1. ### Claim 14 (depends on 13) The display panel of claim 13, comprising a plurality of pixel units, wherein, at least one of the plurality of pixel units comprises a pixel circuit having the at least one thin film transistor, and the first electrode functions as a source electrode and the second electrode functions as a drain electrode. ### Claim 15 (depends on 14) The display panel of claim 14, wherein the first electrode comprises one first conductive connecting strip and four first electrode strips, two first electrode strips of the four first electrode strips are arranged on one side of the first conductive connecting strip, and the other two first electrode strips of the four first electrode strips are arranged on the other side of the first conductive connecting strip; and the second electrode comprises two second electrode strips, the two second electrode strips are respectively arranged on two sides of the first conductive connecting strip, and each of the two second electrode strips is inserted between the two first electrode strips on its side; and the first electrode is electrically coupled to a data line by the first conductive connecting strip, and the second electrode is electrically coupled to a pixel electrode by a conductive part. ### Claim 16 (depends on 13) The display panel of claim 13, further comprising a gate drive circuit comprising a plurality of cascaded shift register units, which comprise the at least one thin film transistor; and the second electrode functions as a source electrode, and the first electrode functions as a drain electrode. ### Claim 17 (depends on 1) A method for manufacturing the thin film transistor of claim 1, comprising: forming a pattern of an active layer on a substrate, so that at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the first electrode strip, which is proximal to the second electrode, and the second electrode, on the layer where the active layer is located; and/or at least an insulating part of a layer where the active layer is located is provided with an insulating material, and the insulating part is located at an orthographic projection of at least a part of a region between a free end of the second electrode strip, which is proximal to the first electrode, and the first electrode, on the layer where the active layer is located. ### Claim 18 (depends on 17) The method of claim 17, wherein, the forming a pattern of an active layer on a substrate comprises forming a semiconductor material layer on the substrate, and forming a via hole in the semiconductor material layer at at least the insulating part of the layer where the active layer is located by a patterning process; and the method further comprises filling the via hole with the insulating material, flattening the insulating material in the via hole and forming a gate insulating layer. ### Claim 19 (depends on 17) The method of claim 17, wherein, the forming a pattern of an active layer on a substrate comprises forming a semiconductor material layer on the substrate, and forming a via hole in the semiconductor material layer at at least the insulating part of the layer where the active layer is located by a patterning process; and the method further comprises depositing a gate insulating layer material directly after forming the via hole to form a pattern of a gate insulating layer while filling the via hole with the gate insulating layer material.