# US 11,309,373 B2 · Display device and method of manufacturing the same

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- Number: US 11,309,373 B2
- Document ID: US11309373B2
- Status: Granted
- Kind: B2
- Application number: 16/838,931
- Filed: 2020-04-02
- Published: 2021-02-04
- Granted: 2022-04-19
- Earliest claimed: 2019-07-30
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Keun Woo Kim; Yong Su Lee; Myoung Geun Cha; Doo Na Kim; Sang Sub Kim; Jae Hwan Chu; Sang Gun Choi
- Web page: https://patentgrep.com/patent/US11309373B2

## CPC

- G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element
- H10K 59/1213: {the pixel elements being TFTs}
- H10D 86/431: {having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- G09G 2300/0426: Layout of electrodes and connections
- G09G 2300/0819: used for counteracting undesired variations, e.g. feedback or autozeroing
- G09G 2300/0842: forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G 2300/0861: with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G 2310/0251: Precharge or discharge of pixel before applying new pixel voltage
- G09G 2310/0262: The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
- H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/427: {having different thicknesses of the semiconductor bodies in different TFTs}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1201: {Manufacture or treatment}
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

## Claims

### Claim 1

A display device comprising:
a pixel at a display region, the pixel comprising:
a light-emitting element connected between a first power source and a second power source; and
a first transistor connected between the first power source and the light-emitting element, the first transistor configured to control a driving current of the light-emitting element in response to a voltage of a first node,
wherein the first transistor comprises a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and
wherein the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

### Claim 2 (depends on 1)

The display device of claim 1, wherein at least one of a thickness of a channel region and a thickness of a gate insulating film of the first driving transistor is different from that of the second driving transistor.

### Claim 3 (depends on 1)

The display device of claim 1, wherein the first transistor comprises:
a first channel region;
a first conductive region and a second conductive region at opposite sides of the first channel region from each other;
a second channel region spaced from the first channel region with the second conductive region interposed therebetween;
a third conductive region spaced from the second conductive region with the second channel region interposed therebetween;
a first gate electrode overlapping the first channel region with a first insulating film interposed therebetween; and
a second gate electrode overlapping the second channel region with the first insulating film interposed therebetween.

### Claim 4 (depends on 3)

The display device of claim 3, wherein:
the first driving transistor comprises a first active layer pattern, and is connected between the first power source and the second driving transistor, the first active layer pattern comprising the first channel region, the first conductive region, and the second conductive region; and
the second driving transistor comprises a second active layer pattern, and is connected between the first driving transistor and the light-emitting element, the second active layer pattern comprising the second channel region, the second conductive region, and the third conductive region.

### Claim 5 (depends on 4)

The display device of claim 4, wherein the first insulating film has a first thickness between the first channel region and the first gate electrode, and a second thickness between the second channel region and the second gate electrode, the second thickness being less than the first thickness.

### Claim 6 (depends on 4)

The display device of claim 4, wherein a thickness of the first channel region is greater than a thickness of the second channel region.

### Claim 7 (depends on 4)

The display device of claim 4, wherein a length of the first channel region is greater than a length of the second channel region.

### Claim 8 (depends on 4)

The display device of claim 4, wherein the first active layer pattern and the second active layer pattern are integrally connected to each other through the second conductive region.

### Claim 9 (depends on 3)

The display device of claim 3, wherein the first gate electrode and the second gate electrode are commonly connected to the first node.

### Claim 10 (depends on 3)

The display device of claim 3, wherein the first transistor further comprises:
a first electrode connected to the first conductive region; and
a second electrode connected to the third conductive region.

### Claim 11 (depends on 1)

The display device of claim 1, wherein the pixel further comprises at least one switching transistor configured to transmit a data signal or a voltage of an initialization power source to the first node.

### Claim 12 (depends on 11)

The display device of claim 11, wherein the switching transistor comprises a plurality of transistors connected in series with each other.