# US 11,309,351 B2 · Micro light-emitting diode and manufacturing method of micro light-emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,351 B2 - Document ID: US11309351B2 - Status: Granted - Kind: B2 - Application number: 16/792,557 - Filed: 2020-02-17 - Published: 2020-08-20 - Granted: 2022-04-19 - Earliest claimed: 2019-02-20 - Assignees: Sharp Kabushiki Kaisha - Applicants: Sharp Kabushiki Kaisha - Inventors: Katsuji Iguchi; Hidenori Kawanishi - Web page: https://patentgrep.com/patent/US11309351B2 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 90/00: Package configurations - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/831: characterised by their shape - H10H 20/032: {of electrodes} - H10H 20/8252: {characterised by the dopants} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A micro light-emitting diode includes a first micro light-emitting diode including a first light-emitting layer and emitting light at a first wavelength, and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer emitting light at a second wavelength longer than the first wavelength, in which the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and a nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other. ## Claims ### Claim 1 A micro light-emitting diode comprising: a first micro light-emitting diode including a first light-emitting layer that emits light of a first wavelength; and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer that emits light of a second wavelength longer than the first wavelength, wherein: the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor; the second light-emitting layer is a nitride semiconductor layer doped with a first rare earth element; and the nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other; wherein side walls of the first light-emitting layer and the second light-emitting layer are covered with a high-resistance nitride semiconductor layer. ### Claim 2 A micro light-emitting diode comprising: a first micro light-emitting diode including a first light-emitting layer that emits light of a first wavelength; and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer that emits light of a second wavelength longer than the first wavelength, wherein: the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor; the second light-emitting layer is a nitride semiconductor layer doped with a first rare earth element; and the nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other; wherein the first light-emitting layer is a nitride semiconductor layer doped with a second rare earth element. ### Claim 3 A micro light-emitting diode comprising: a first micro light-emitting diode that includes a first light-emitting layer containing a first rare earth element and emits light at a first wavelength; and a second micro light-emitting diode that includes a second light-emitting layer containing a second rare earth element and emits light at a second wavelength longer than the first wavelength, wherein the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor, and the first light-emitting layer and the second light-emitting layer are both covered with an electrode layer in a plan view. ### Claim 4 (depends on 3) The micro light-emitting diode according to claim 3, wherein the first light-emitting layer and the second light-emitting layer are spaced apart by a separation groove. ### Claim 5 (depends on 4) The micro light-emitting diode according to claim 4, wherein a high-resistance nitride semiconductor layer is between the first light-emitting layer and a side wall of the separation groove and between the second light-emitting layer and a side wall of the separation groove. ### Claim 6 (depends on 3) The micro light-emitting diode according to claim 3, further comprising: a third micro light-emitting diode that includes a third light-emitting layer containing a third rare earth element and emits light at a third wavelength longer than the second wavelength, wherein the third micro light-emitting diode is made of a nitride semiconductor, and the third light-emitting layer is covered with an electrode layer in a plan view. ### Claim 7 A manufacturing method of a micro light-emitting diode comprising: forming a nitride semiconductor layer including a first light-emitting layer that emits light of a first wavelength; forming a second light-emitting layer by doping a first rare earth element, the second light-emitting layer emitting light of a second wavelength longer than the first wavelength; and separating the nitride semiconductor layer into a first micro light-emitting diode that includes the first light-emitting layer and emits light at the first wavelength and a second micro light-emitting diode that includes the first light-emitting layer and the second light-emitting layer and emits light at the second wavelength. ### Claim 8 A manufacturing method of a micro light-emitting diode comprising: forming a first micro light-emitting diode that includes a first light-emitting layer containing a first rare earth element and emits light at a first wavelength, the first micro light-emitting diode formed with a nitride semiconductor; forming a second micro light-emitting diode that includes a second light-emitting layer containing a second rare earth element and emits light at a second wavelength longer than the first wavelength, the second micro light-emitting diode formed with a nitride semiconductor; and covering the first light-emitting layer and the second light-emitting layer with an electrode layer in a plan view.