# US 11,309,349 B2 · P-type semiconductor layers coupled to N-type semiconductor layers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,349 B2 - Document ID: US11309349B2 - Status: Granted - Kind: B2 - Application number: 17/047,300 - Filed: 2018-08-21 - Published: 2021-06-03 - Granted: 2022-04-19 - Earliest claimed: 2018-08-21 - Assignees: Hewlett-Packard Development Company, L.P. - Applicants: Hewlett-Packard Development Company, L.P. - Inventors: Ning Ge; Robert Ionescu; Helen A Holder; Jarrid Wittkopf - Web page: https://patentgrep.com/patent/US11309349B2 ## CPC - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 29/14: comprising multiple light-emitting semiconductor components - H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors} - H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - H10F 71/134: {Irradiation with electromagnetic or particle radiation} - H10F 77/147: {Shapes of bodies} - H10F 77/206: {for devices having potential barriers} - H10F 77/933: {for devices having potential barriers} - H10H 20/81: Bodies - H10W 90/00: Package configurations - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A device includes a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer. The monolithic N-type semiconductor layer includes a first portion and a second portion. The first portion has a first surface and the second portion has a second surface facing away from the first surface. The monolithic P-type semiconductor layer includes a third portion and a fourth portion. The third portion has a third surface and the fourth portion has a fourth surface facing away from the third surface. ## Claims ### Claim 1 A device comprising: a P-N junction comprising a monolithic N-type semiconductor layer coupled to a monolithic P-type semiconductor layer, wherein the monolithic N-type semiconductor layer includes a first portion and a second portion, the first portion having a first surface and the second portion having a second surface facing away from the first surface, and wherein the monolithic P-type semiconductor layer includes a third portion and a fourth portion, the third portion having a third surface and the fourth portion having a fourth surface facing away from the third surface, wherein the first portion of the monolithic N-type semiconductor layer and the third portion of the monolithic P-type semiconductor have a first orientation and the second portion of the monolithic N-type semiconductor layer and the fourth portion of the monolithic P-type semiconductor layer have a second orientation opposite to the first orientation. ### Claim 2 (depends on 1) The device of claim 1, further comprising: a first contact coupled to the first surface; a second contact coupled to the second surface; a third contact coupled to the third surface; and a fourth contact coupled to the fourth surface. ### Claim 3 (depends on 1) The device of claim 1, wherein the first portion of the monolithic N-type semiconductor layer and the third portion of the monolithic P-type semiconductor layer form a first light emitting diode (LED) having the first orientation and the second portion of the monolithic N-type semiconductor layer and the fourth portion of the monolithic P-type semiconductor layer form the second LED having the second orientation opposite to the first orientation. ### Claim 4 (depends on 1) The device of claim 1, wherein the first portion of the monolithic N-type semiconductor layer and the third portion of the monolithic P-type semiconductor layer form a first photon sensing diode having the first orientation and the second portion of the monolithic N-type semiconductor layer and the fourth portion of the monolithic P-type semiconductor layer form a second photon sensing diode having the second orientation opposite to the first orientation. ### Claim 5 (depends on 1) The device of claim 1, wherein the first surface is parallel to the fourth surface and the second surface is parallel to the third surface. ### Claim 6 (depends on 1) The device of claim 1, wherein the first surface is aligned with the fourth surface, and the second surface is aligned with the third surface. ### Claim 7 (depends on 1) The device of claim 1, wherein the first portion and the fourth portion are arranged in a first plane, and the second portion and the third portion are arranged in a second plane parallel to the first plane. ### Claim 8 A device comprising: an array of diode pairs, each diode pair comprising: a monolithic N-type semiconductor layer having a first portion and a second portion, the first portion having a first surface and the second portion having a second surface facing away from the first surface; a monolithic P-type semiconductor layer coupled to the monolithic N-type semiconductor layer, the monolithic P-type semiconductor layer having a third portion and a fourth portion, the third portion having a third surface and the fourth portion having a fourth surface facing away from the third surface; a first contact coupled to the first surface; a second contact coupled to the second surface; a third contact coupled to the third surface; and a fourth contact coupled to the fourth surface; and an array of first electrodes, each first electrode electrically coupled to the first contact and the fourth contact of a corresponding diode pair of the array of diode pairs or to the second contact and the third contact of the corresponding diode pair, wherein each diode pair comprises a first light emitting diode (LED) having a first orientation and a second LED having a second orientation opposite to the first orientation. ### Claim 9 (depends on 8) The device of claim 8, further comprising: an array of second electrodes opposite to the array of first electrodes, each second electrode electrically coupled to the second contact and the third contact of the corresponding diode pair or to the first contact and the fourth contact of the corresponding diode pair. ### Claim 10 (depends on 8) The device of claim 8, wherein a first portion of the array of first electrodes are electrically coupled to the first contact and the fourth contact of the corresponding diode pair and a second portion of the array of first electrodes are electrically coupled to the second contact and the third contact of the corresponding diode pair. ### Claim 11 (depends on 8) The device of claim 8, wherein the first surface is aligned with the fourth surface, and the second surface is aligned with the third surface. ### Claim 12 (depends on 8) The device of claim 8, wherein the first portion and the fourth portion are arranged in a first plane, and the second portion and the third portion are arranged in a second plane parallel to the first plane. ### Claim 13 A device comprising: an array of diode pairs, each diode pair comprising: a monolithic N-type semiconductor layer having a first portion and a second portion, the first portion having a first surface and the second portion having a second surface facing away from the first surface; a monolithic P-type semiconductor layer coupled to the monolithic N-type semiconductor layer, the monolithic P-type semiconductor layer having a third portion and a fourth portion, the third portion having a third surface and the fourth portion having a fourth surface facing away from the third surface; a first contact coupled to the first surface; a second contact coupled to the second surface; a third contact coupled to the third surface; and a fourth contact coupled to the fourth surface; and an array of first electrodes, each first electrode electrically coupled to the first contact and the fourth contact of a diode pair of the array of diode pairs or to the second contact and the third contact of a diode pair of the array of diode pairs, wherein each diode pair comprises a first sensor having a first orientation and a second sensor having a second orientation opposite to the first orientation. ### Claim 14 (depends on 13) The device of claim 13, further comprising: an array of second electrodes opposite to the array of first electrodes, each second electrode electrically coupled to the second contact and the third contact of the corresponding diode pair or to the first contact and the fourth contact of the corresponding diode pair. ### Claim 15 (depends on 13) The device of claim 13, wherein a first portion of the array of first electrodes are electrically coupled to the first contact and the fourth contact of the corresponding diode pair and a second portion of the array of first electrodes are electrically coupled to the second contact and the third contact of the corresponding diode pair. ### Claim 16 (depends on 13) The device of claim 13, wherein the first surface is aligned with the fourth surface, and the second surface is aligned with the third surface. ### Claim 17 (depends on 13) The device of claim 13, wherein the first portion and the fourth portion are arranged in a first plane, and the second portion and the third portion are arranged in a second plane parallel to the first plane.