# US 11,309,305 B2 · Optical systems fabricated by printing-based assembly

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- Number: US 11,309,305 B2
- Document ID: US11309305B2
- Status: Granted
- Kind: B2
- Application number: 16/667,215
- Filed: 2019-10-29
- Published: 2020-05-21
- Granted: 2022-04-19
- Earliest claimed: 2007-01-17
- Assignees: The Board of Trustees of the University of Illinois; X-Celeprint Limited
- Applicants: The Board of Trustees of the University of Illinois; X-Celeprint Limited
- Inventors: John A. Rogers; Ralph Nuzzo; Matthew Meitl; Etienne Menard; Alfred Baca; Michael Motala; Jong-Hyun Ahn; Sang-Il Park; Chang-Jae Yu; Heung Cho Ko; Mark Stoykovich; Jongseung Yoon
- Web page: https://patentgrep.com/patent/US11309305B2

## CPC

- H10W 90/00: Package configurations
- H01S 5/021: {Silicon based substrates}
- H01S 5/02251: using optical fibres
- H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S 5/3013: {AIIIBV compounds}
- H01S 5/34326: {with a well layer based on InGa(Al)P, e.g. red laser}
- H01S 5/423: {having a vertical cavity}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10D 86/0241: {using liquid deposition, e.g. printing}
- H10D 86/40: characterised by multiple TFTs
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10F 10/144: comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
- H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells
- H10F 19/40: comprising photovoltaic cells in a mechanically stacked configuration
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/8063: {Microlenses}
- H10F 39/811: {Interconnections}
- H10F 55/25: wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/1224: {comprising microcrystalline silicon}
- H10F 71/129: {Passivating}
- H10F 71/137: {Batch treatment of the devices}
- H10F 71/139: {using temporary substrates}
- H10F 77/1223: characterised by the dopants
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- H10F 77/407: {indirectly associated with the devices}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/484: {Refractive light-concentrating means, e.g. lenses}
- H10F 77/488: {Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection}
- H10F 77/67: including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements
- H10F 77/933: {for devices having potential barriers}
- H10F 77/935: {for photovoltaic devices or modules}
- H10H 20/01: Manufacture or treatment
- H10H 20/018: {Bonding of wafers}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/8506: {Containers}
- H10H 20/852: Encapsulations
- H10H 20/853: characterised by their shape
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 72/00: Interconnections or connectors in packages
- B81C 2201/0185: Printing, e.g. microcontact printing
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 30/6758: {characterised by the insulating substrates}
- H10H 20/0362: {of encapsulations}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/0364: {of interconnections}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10W 72/0198: {batch processes}
- H10W 72/0711: {Apparatus therefor}
- H10W 72/07178: {Means for aligning}
- H10W 72/07183: {Means for monitoring}
- H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate}
- H10W 72/354: {comprising polymers}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/544: Solar cells from Group III-V materials
- Y02E 10/545: Microcrystalline silicon PV cells
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

## Claims

### Claim 1

An optical system, comprising:
a substrate having a contoured conformation and a receiving surface, the substrate comprising polymer, glass, ceramic, or metal; and
a plurality of devices, each device comprising a rigid single crystalline semiconductor disposed on the contoured receiving surface of the substrate, wherein the plurality of devices are disposed in a regular array on the substrate at a density equal to or greater than five per millimeter;
wherein a first device of the plurality of devices has at least a length or a width less than or equal to 200 microns, wherein the substrate is substantially larger than the first device, wherein the first device is less curved than the substrate, and wherein the first device comprises a portion of a fractured bridge element extending from a lateral edge of the first device.

### Claim 2 (depends on 1)

The optical system of claim 1, wherein the receiving surface is a concave surface, a convex surface, a spherical surface, an elliptical surface, or a complex contour with both concave regions and convex regions.

### Claim 3 (depends on 1)

The optical system of claim 1, wherein the first device is selected from the group consisting of an LED, a sensor, a diode, and a photodiode.

### Claim 4 (depends on 1)

The optical system of claim 1, wherein the first device comprises at least one of a compound semiconductor and a doped semiconductor.

### Claim 5 (depends on 1)

The optical system of claim 1, wherein the optical system has an optical transparency greater than 50% at an optical wavelength of light, and wherein the plurality of devices covers less than one half of the receiving surface.

### Claim 6 (depends on 1)

The optical system of claim 1, wherein the first device has a thickness selected from a range of 10 nanometers to 20 microns.

### Claim 7 (depends on 1)

The optical system of claim 1, wherein the receiving surface is devoid of alignment structures that preferentially align the light-emitting elements on the receiving surface.

### Claim 8 (depends on 1)

The optical system of claim 1, wherein the substrate is a flexible substrate.

### Claim 9 (depends on 1)

The optical system of claim 1, wherein the substrate is a rigid substrate.

### Claim 10 (depends on 1)

The optical system of claim 1, wherein the first device is a solar cell.

### Claim 11 (depends on 1)

The optical system of claim 1, wherein the first device is a light-emitting diode or vertical cavity surface emitting laser.

### Claim 12 (depends on 1)

The optical system of claim 1, wherein the first device is a photodiode.

### Claim 13

An optical system comprising:
a substrate having a contoured receiving surface;
a device comprising a rigid single crystalline semiconductor disposed on the contoured receiving surface of the substrate, and
a planarizing layer disposed between the substrate and the device;
wherein the device has at least a length or a width less than or equal to 200 microns, wherein the substrate is substantially larger than the device, wherein the device is less curved than the substrate, and wherein the device comprises a portion of a fractured bridge element extending from a lateral edge of the device.