# US 11,309,284 B2 · Solid-state image capturing apparatus and electronic device for acquiring a normal image and a narrow band image > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,284 B2 - Document ID: US11309284B2 - Status: Granted - Kind: B2 - Application number: 15/512,398 - Filed: 2015-09-25 - Published: 2017-09-28 - Granted: 2022-04-19 - Earliest claimed: 2014-10-06 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Taro Sugizaki; Isao Hirota - Web page: https://patentgrep.com/patent/US11309284B2 ## CPC - H10W 90/00: Package configurations - G02B 5/008: {Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553)} - G02B 5/20: Filters (polarising elements G02B5/30) - G02B 5/204: {in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces (for use with wavelengths longer than the infrared light H01Q15/0006)} - G02B 5/288: {comprising at least one thin film resonant cavity, e.g. in bandpass filters} - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10F 39/10: Integrated devices - H10F 39/182: {Colour image sensors} - H10F 39/184: {Infrared image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F 99/00: Subject matter not provided for in other groups of this subclass - H10F 77/12: Active materials - H10F 77/122: comprising only Group IV materials - H10F 77/1237: {having at least three elements, e.g. HgCdTe} - H10F 77/1246: {III-V nitrides, e.g. GaN} - H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP} - H10F 77/12485: {comprising nitride compounds, e.g. InGaN} - Y02E 10/547: Monocrystalline silicon PV cells - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract The present technology relates to a solid-state image capturing apparatus and an electronic device that can acquire a normal image and a narrow band image at the same time. The solid-state image capturing apparatus includes a plurality of substrates laminated in two or more layers, and two or more substrates of the plurality of substrates have pixels that perform photoelectric conversion. At least one substrate of the substrates having the pixels is a visible light sensor that receives visible light, and at least another substrate of the substrates having the pixels is a narrow band light sensor that includes narrow band filters being optical filters permeating light in a narrow wavelength band, and receives narrow band light in the narrow band. ## Claims ### Claim 1 A solid-state image capturing apparatus, comprising: a plurality of substrates; a plurality of color filters; an insulating film; and at least two layers configured to laminate the plurality of substrates, wherein at least two substrates of the plurality of substrates comprise a plurality of pixels configured to execute photoelectric conversion, a first substrate of the at least two substrates comprises a first set of pixels of the plurality of pixels, the first substrate is a visible light sensor configured to receive visible light, a second substrate of the at least two substrates comprises a second set of pixels of the plurality of pixels, the second substrate is a narrow band light sensor, the narrow band light sensor is configured to receive narrow band light in a narrow wavelength band of a plurality of narrow wavelength bands, based on a position of the narrow band light sensor, a pass band of a first narrow wavelength band of the plurality of narrow wavelength bands is different from a passband of a second narrow wavelength band of the plurality of narrow wavelength bands, a light receiving surface of the narrow band light sensor comprises a plurality of regions, each region of the plurality of regions of the light receiving surface receives light corresponding to one narrow wavelength band of the plurality of narrow wavelength bands, one of the visible light sensor or the narrow band light sensor includes a plurality of transparent materials, one of the first set of pixels or the second set of pixels is the plurality of transparent materials, each of the plurality of transparent materials includes silicon (Si), the narrow band light sensor includes a filter layer comprising a plurality of narrow band filters, a number of narrow band filters in the plurality of narrow band filters is same as a number of photodiodes (PDs) in a plurality of PDs of the second substrate, the visible light sensor includes a first semiconductor layer, a first poly layer, and a first wiring layer, the insulating film is between the plurality of color filters and an upper surface of the first semiconductor layer, the insulating film is in contact with the plurality of color filters and the upper surface of the first semiconductor layer, the first wiring layer includes a light shielding layer in a first part of the first wiring layer other than a second part of the first wiring layer, the second part of the first wiring layer corresponds to an upper part of the plurality of PDs of the second substrate, the narrow band light sensor includes a second semiconductor layer, a second poly layer, and a second wiring layer, the second wiring layer includes a plurality of wirings in a first region of the second wiring layer, a second region of the filter layer includes the plurality of narrow band filters, the first region of the second wiring layer is non-overlapping with the second region of the filter layer, the first region of the second wiring layer overlaps a third region of the second semiconductor layer, the third region is between a first PD of the plurality of PDs and a second PD of the plurality of PDs, and the first semiconductor layer, the first poly layer, the first wiring layer, the plurality of narrow band filters, the second wiring layer, the second poly layer, and the second semiconductor layer are stacked in this order. ### Claim 2 (depends on 1) The solid-state image capturing apparatus according to claim 1, wherein the plurality of narrow band filters is configured to permeate light in a plurality of wavelength bands. ### Claim 3 (depends on 2) The solid-state image capturing apparatus according to claim 2, wherein the visible light sensor is laminated as an upper layer of the narrow band light sensor, and the visible light sensor is on a first side of a light incident surface of the solid-state image capturing apparatus. ### Claim 4 (depends on 3) The solid-state image capturing apparatus according to claim 3, wherein the narrow band light sensor includes the second set of pixels configured to receive the light permeated through the visible light sensor and the plurality of narrow band filters. ### Claim 5 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the visible light sensor is an upper layer substrate, the upper layer substrate is over a lower layer substrate, the lower layer substrate is opposite to the first side of the light incident surface, the narrow band light sensor is the lower layer substrate, and the lower layer substrate is configured to receive the light through the upper layer substrate. ### Claim 6 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the visible light sensor is an upper layer substrate, the upper layer substrate is over a lower layer substrate, the lower layer substrate is opposite to the first side of the light incident surface, the narrow band light sensor is the lower layer substrate, and the lower layer substrate is configured to receive the light permeated through the upper layer substrate. ### Claim 7 (depends on 5) The solid-state image capturing apparatus according to claim 5, wherein the plurality of color filters includes a color filter configured to permeate at least one of green light, red light, or white light, the plurality of color filters is on the first side of the light incident surface, and each of the visible light sensor and the narrow band light sensor is configured to receive the light permeated through the plurality of color filters. ### Claim 8 (depends on 6) The solid-state image capturing apparatus according to claim 6, wherein the plurality of color filters includes a color filter configured to permeate at least one of green light, red light, or white light, the plurality of color filters is on the first side of the light incident surface, and each of the visible light sensor and the narrow band light sensor is configured to receive the light permeated through the plurality of color filters. ### Claim 9 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the plurality of color filters is an array arranged as an upper layer of the visible light sensor and the narrow band light sensor, the plurality of color filters is on the first side of the light incident surface, and the plurality of color filters includes a white color filter configured to permeate white light. ### Claim 10 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein an area of the light received by the narrow band light sensor is larger than an area of the light permeated through the visible light sensor, and the narrow band light sensor is a lower layer of the visible light sensor. ### Claim 11 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the light permeated through the visible light sensor further permeates through at least one narrow band filter of the plurality of narrow band filters based on positions of the plurality of narrow band filters. ### Claim 12 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the narrow band light sensor is a lower layer of the visible light sensor, and the second set of pixels of the narrow band light sensor is configured to collectively receive the light permeated through the first set of pixels of the visible light sensor. ### Claim 13 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the second set of pixels of the narrow band light sensor comprises an InGaAs based material. ### Claim 14 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the second set of pixels of the narrow band light sensor comprises at least one of a PbS based material, a PbSe based material, a Ge based material, an InAs based material, an InSb based material, or an HgCdTe based material. ### Claim 15 (depends on 4) The solid-state image capturing apparatus according to claim 4, wherein the second set of pixels of the narrow band light sensor comprises at least one of a GaN based material, an InGaN based material, or an AlGaN based material. ### Claim 16 (depends on 1) The solid-state image capturing apparatus according to claim 1, wherein the light receiving surface includes a plurality of specific regions. ### Claim 17 (depends on 1) The solid-state image capturing apparatus according to claim 1, wherein the first substrate is in contact with the second substrate. ### Claim 18 An electronic apparatus, comprising: an optical system configured to collect light; and a solid-state image capturing apparatus configured to: receive the light; and capture an image, wherein the solid-state image capturing apparatus includes: a plurality of substrates; a plurality of color filters; an insulating film; and at least two layers configured to laminate the plurality of substrates, wherein at least two substrates of the plurality of substrates comprise a plurality of pixels configured to execute photoelectric conversion, a first substrate of the at least two substrates comprises a first set of pixels of the plurality of pixels, the first substrate is a visible light sensor configured to receive visible light, a second substrate of the at least two substrates comprises a second set of pixels of the plurality of pixels, the second substrate is a narrow band light sensor, the narrow band light sensor is configured to receive narrow band light in a narrow wavelength band of a plurality of narrow wavelength bands, based on a position of the narrow band light sensor, a pass band of a first narrow wavelength band of the plurality of narrow wavelength bands is different from a passband of a second narrow wavelength band of the plurality of narrow wavelength bands, a light receiving surface of the narrow band light sensor comprises a plurality of regions, each region of the plurality of regions of the light receiving surface receives light corresponding to one narrow wavelength band of the plurality of narrow wavelength bands, one of the visible light sensor or the narrow band light sensor includes a plurality of transparent materials, one of the first set of pixels or the second set of pixels is the plurality of transparent materials, each of the plurality of transparent materials includes silicon (Si), the narrow band light sensor includes a filter layer comprising a plurality of narrow band filters, a number of narrow band filters in the plurality of narrow band filters is same as a number of photodiodes (PDs) in a plurality of PDs of the second substrate, the visible light sensor includes a first semiconductor layer, a first poly layer, and a first wiring layer, the insulating film is between the plurality of color filters and an upper surface of the first semiconductor layer, the insulating film is in contact with the plurality of color filters and the upper surface of the first semiconductor layer, the first wiring layer includes a light shielding layer in a first part of the first wiring layer other than a second part of the first wiring layer, the second part of the first wiring layer corresponds to an upper part of the plurality of PDs of the second substrate, the narrow band light sensor includes a second semiconductor layer, a second poly layer, and a second wiring layer, the second wiring layer includes a plurality of wirings in a first region of the second wiring layer, a second region of the filter layer includes the plurality of narrow band filters, the first region of the second wiring layer is non-overlapping with the second region of the filter layer, the first region of the second wiring layer overlaps a third region of the second semiconductor layer, the third region is between a first PD of the plurality of PDs and a second PD of the plurality of PDs, and the first semiconductor layer, the first poly layer, the first wiring layer, the plurality of narrow band filters, the second wiring layer, the second poly layer, and the second semiconductor layer are stacked in this order.