# US 11,309,278 B2 · Methods for bonding substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,278 B2 - Document ID: US11309278B2 - Status: Granted - Kind: B2 - Application number: 16/520,680 - Filed: 2019-07-24 - Published: 2020-04-30 - Granted: 2022-04-19 - Earliest claimed: 2018-10-29 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Prayudi Lianto; Guan Huei See; Sriskantharajah Thirunavukarasu; Arvind Sundarrajan; Xundong Dai; Peter Khai Mum Fung - Web page: https://patentgrep.com/patent/US11309278B2 ## CPC - H10W 72/0198: {batch processes} - H10W 72/073: {of die-attach connectors} - H10W 72/30: Die-attach connectors - B23K 20/023: {Thermo-compression bonding} - B23K 2101/40: Semiconductor devices - H10W 72/01353: {by etching} - H10W 72/019: {of bond pads} - H10W 72/01935: {by plating, e.g. electroless plating or electroplating} - H10W 72/01938: {in gaseous form, e.g. by CVD or PVD} - H10W 72/01953: {by etching} - H10W 72/01955: {by using masks} - H10W 72/07236: {Soldering or alloying} - H10W 72/07311: {Treating the bonding area before connecting, e.g. by applying flux or cleaning} - H10W 72/07331: {Connecting techniques} - H10W 72/07341: {Controlling the bonding environment, e.g. atmosphere composition or temperature} - H10W 72/322: {Multilayered die-attach connectors, e.g. a coating on a top surface of a core} - H10W 72/323: {characterised by the structures of the outermost layers, e.g. multilayered coatings} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/355: {of outermost layers of multilayered die-attach connectors, e.g. material of a coating} - H10W 72/90: Bond pads, in general - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/934: {Cross-sectional shape, i.e. in side view} - H10W 72/941: {Dispositions of bond pads} - H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias} - H10W 72/951: {Materials of bond pads} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 72/983: {Reinforcing structures, e.g. collars} - H10W 80/301: {Bonding techniques, e.g. hybrid bonding} - H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers} - H10W 80/334: {Thermocompression bonding} - H10W 90/792: {between multiple chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM ## Abstract Methods for bonding substrates used, for example, in substrate-level packaging, are provided herein. In some embodiments, a method for bonding substrates includes: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate, performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate, positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate, and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate. ## Claims ### Claim 1 A method for bonding substrates, comprising: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate; performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate; positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate; and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate, wherein bonding the first substrate to the second substrate is performed at a temperature not exceeding 250° C. ### Claim 2 (depends on 1) The method of claim 1, wherein the at least one material is at least one of Sn, Ag, Pb, In, Bi, or Au. ### Claim 3 (depends on 2) The method of claim 2, wherein at least one of the first substrate and the second substrate comprises at least one of Cu or Al, and at least one of Si, oxide, or a polymer, and wherein the at least one material is deposited on the at least one of Cu or Al. ### Claim 4 (depends on 1) The method of claim 1, wherein the at least one material is deposited on each of the first substrate and the second substrate to a thickness not exceeding 5 μm. ### Claim 5 (depends on 1) The method of claim 1, wherein after CMP is performed, the bonding interface on the first substrate and the bonding interface on the second substrate each has a thickness not exceeding 100 nm. ### Claim 6 (depends on 1) The method of claim 1, wherein bonding the first substrate to the second substrate is performed at atmospheric pressure. ### Claim 7 (depends on 1) The method of claim 1 further comprising: performing physical vapor deposition (PVD) to deposit a first material on each of the first substrate and the second substrate, wherein performing ECD to deposit the at least one material on each of the first substrate and the second substrate comprises performing ECD to deposit a second material on each of the first substrate and the second substrate, and wherein performing CMP on the first substrate and the second substrate to form the bonding interface on each of the first substrate and the second substrate comprises performing on the first substrate and the second substrate to form a bonding interface of the second material on each of the first substrate and the second substrate. ### Claim 8 (depends on 7) The method of claim 7, wherein the first material is one of Ti, Cu, and combinations thereof, and the second material is one of Sn, Ag, Pb, In, Bi, or Au. ### Claim 9 (depends on 8) The method of claim 8, wherein at least one of the first substrate and the second substrate comprises at least one of Cu or Al, and at least one of Si, oxide, or a polymer, and wherein the first material is deposited on the at least one of Cu or Al, and the second material is deposited on the first material. ### Claim 10 (depends on 7) The method of claim 7, wherein the first material is deposited to a thickness not exceeding 1 μm, and wherein the second material is deposited to a thickness not exceeding 5 μm. ### Claim 11 (depends on 7) The method of claim 7, wherein after CMP is performed, the bonding interface and the first material on the first substrate have a combined thickness not exceeding 100 nm, and the bonding interface and the first material on the second substrate have a combined thickness not exceeding 100 nm. ### Claim 12 (depends on 7) The method of claim 7, wherein bonding the first substrate to the second substrate is performed at atmospheric pressure. ### Claim 13 (depends on 7) The method of claim 7, wherein bonding the first substrate to the second substrate is performed at a temperature not exceeding 250° C. ### Claim 14 A nontransitory computer readable storage medium having stored thereon instructions that when executed by a processor perform a method for bonding substrates, the method comprising: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate; performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate; positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate; and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate, wherein bonding the first substrate to the second substrate is performed at a temperature not exceeding 250° C. ### Claim 15 (depends on 14) The nontransitory computer readable storage medium of claim 14, wherein the at least one material is at least one of Sn, Ag, Pb, In, Bi, or Au, wherein at least one of the first substrate and the second substrate comprises at least one of Cu or Al, and at least one of Si, oxide, or a polymer, wherein the at least one material is deposited on the at least one of Cu or Al, and wherein the at least one material is deposited on each of the first substrate and the second substrate to a thickness not exceeding 5 μm. ### Claim 16 (depends on 14) The nontransitory computer readable storage medium of claim 14, wherein after CMP is performed, the bonding interface on the first substrate and the bonding interface on the second substrate each has a thickness not exceeding 100 nm. ### Claim 17 (depends on 14) The nontransitory computer readable storage medium of claim 14, wherein bonding the first substrate to the second substrate is performed at atmospheric pressure. ### Claim 18 A method for bonding substrates, comprising: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate and form a bonding interface on each of the first substrate and the second substrate; after performing ECD, performing chemical mechanical polishing (CMP) on the first substrate and the second substrate such that the formed bonding interface on each of the first substrate and the second substrate has a thickness not exceeding 100 nm; positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate; and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate.