# US 11,309,262 B2 · Device having physically unclonable function, method for manufacturing same, and chip using same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,262 B2 - Document ID: US11309262B2 - Status: Granted - Kind: B2 - Application number: 17/073,844 - Filed: 2020-10-19 - Published: 2021-02-04 - Granted: 2022-04-19 - Earliest claimed: 2017-09-01 - Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Inventors: Dong Wang; Xiao Yan Bao; Tian Hua Dong; Guang Ning Li - Web page: https://patentgrep.com/patent/US11309262B2 ## CPC - H10W 42/405: {using active circuits} - G06F 21/72: in cryptographic circuits - H04L 9/0866: {involving user or device identifiers, e.g. serial number, physical or biometrical information, DNA, hand-signature or measurable physical characteristics} - H04L 9/3278: {using physically unclonable functions [PUF]} - H10D 30/0223: {having source and drain regions or source and drain extensions self-aligned to sides of the gate} - H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)} - H10D 62/60: Impurity distributions or concentrations - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10D 64/021: {using multiple gate spacer layers, e.g. bilayered sidewall spacers} - H10D 64/251: {Source or drain electrodes for field-effect devices} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 84/013: {Manufacturing their source or drain regions, e.g. silicided source or drain regions} - H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/83: of only insulated-gate FETs [IGFET] - H10P 32/1414: {the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon} - H10P 32/171: {being group IV material} - H10P 32/302: {Doping polycrystalline silicon or amorphous silicon layers} - G06F 2221/2107: File encryption - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H04L: TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION (arrangements common to telegraphic and telephonic communication H04M) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present application relates to a technical field of semiconductors, and discloses a device having a physically unclonable function, a method for manufacturing same, and a chip using same. The may method include: providing a substrate structure that comprises: a substrate comprising encryption device areas and reference device areas; at least one first gate structure on the encryption device areas and used in an encryption device and a first spacer layer on a side wall of the first gate structure; a first interconnection layer on the encryption device areas and the first spacer layer; at least one second gate structure on the reference device areas and used in a reference device and a second spacer layer on a side wall of the second gate structure; and a second interconnection layer on the reference device area and the second spacer layer; performing first ion injection, so as to introduce first impurities into the first interconnection layer; performing second ion injection, so as to introduce second impurities into the first and second interconnection layers, where a password of the device having a physically unclonable function is determined according to a drain current of each encryption device and a drain current of a reference device corresponding to the encryption device. ## Claims ### Claim 1 A device having a physically unclonable function, comprising: a substrate comprising encryption device areas and reference device areas; an encryption device array comprising at least one encryption device, where each encryption device comprises: a first gate structure on the encryption device areas; a first spacer layer on a side wall of the first gate structure; a first interconnection layer on the encryption device areas and the first spacer layer; and a first source area and a first drain area in the encryption device areas at two sides of the first gate structure; and a reference device array comprising at least one reference device, where each reference device comprises: a second gate structure on the reference device areas; a second spacer layer on a side wall of the second gate structure; a second interconnection layer on the reference device areas and the second spacer layer; and a second source area and a second drain area in the reference device areas at two sides of the second gate structure, wherein the first interconnection layer comprises first impurities comprising a Group IV element and does not comprise second impurities comprising a Group V element and the second interconnection layer comprises both the first impurities and the second impurities. ### Claim 2 (depends on 1) The device according to claim 1, wherein the password of the device having a physically unclonable function is determined according to a difference between the drain current of each encryption device and the drain current of the reference device corresponding to the encryption device. ### Claim 3 (depends on 1) The device according to claim 1, wherein the first gate of the first gate structure comprises the first impurities introduced through first ion injection. ### Claim 4 (depends on 1) The device according to claim 1, wherein the first impurities comprise one or more selected from a group consisting of: Ge, Si, and C. ### Claim 5 (depends on 1) The device according to claim 1, wherein: a top of the first spacer layer is higher than a top of the first gate of the first gate structure; and a top of the second spacer layer is higher than a top of the second gate of the second gate structure. ### Claim 6 (depends on 1) The device according to claim 1, wherein: materials of the first interconnection layer and the second interconnection layer comprise polysilicon. ### Claim 7 (depends on 1) The device according to claim 1, wherein one encryption device corresponds to one reference device. ### Claim 8 (depends on 1) The device according to claim 1, wherein a plurality of encryption devices corresponds to one reference device. ### Claim 9 (depends on 1) A chip, comprising a device having a physically unclonable function according to claim 1.