# US 11,309,259 B2 · High frequency module

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- Number: US 11,309,259 B2
- Document ID: US11309259B2
- Status: Granted
- Kind: B2
- Application number: 17/077,125
- Filed: 2020-10-22
- Published: 2021-02-11
- Granted: 2022-04-19
- Earliest claimed: 2018-05-08
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Tadashi Nomura; Takafumi Kusuyama
- Web page: https://patentgrep.com/patent/US11309259B2

## CPC

- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 74/114: {by a substrate and the encapsulations}
- H05K 3/00: Apparatus or processes for manufacturing printed circuits
- H05K 3/28: Applying non-metallic protective coatings {(H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673)}
- H05K 9/00: Screening of apparatus or components against electric or magnetic fields (devices for absorbing radiation from an antenna H01Q17/00)
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 72/90: Bond pads, in general
- H10W 74/016: {using moulds}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 72/0198: {batch processes}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/014: {using batch processing}
- H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A high frequency module in which warpage does not easily occur is provided by adjusting linear expansion coefficient, glass transition temperature, and elastic modulus of a sealing resin layer. The high frequency module includes a wiring board, a first component mounted on a lower surface of the wiring board, a plurality of connection terminals, a first sealing resin layer that coats the first component and the connection terminal, a plurality of second components mounted on an upper surface of the wiring board, a second sealing resin layer coating the second components, and a shield film. The first sealing resin layer is formed thinner than the second sealing resin layer, and the first sealing resin layer has the linear expansion coefficient of the resin smaller than the linear expansion coefficient of the resin of the second sealing resin layer.

## Claims

### Claim 1

A high frequency module comprising:
a wiring board;
a first component mounted on one main surface of the wiring board;
a first sealing resin layer having a contact surface, an opposing surface, and a side surface, and sealing the first component, wherein the contact surface of the first sealing resin layer comes into contact with the one main surface of the wiring board, the opposing surface of the first sealing resin layer opposes the contact surface of the first sealing resin layer, and the side surface of the first sealing resin layer connects end edges of the contact surface of the first sealing resin layer and the opposing surface of the first sealing resin layer to each other;
a second component mounted on another main surface of the wiring board; and
a second sealing resin layer having a contact surface, an opposing surface, and a side surface, and sealing the second component, wherein the contact surface of the second sealing resin layer comes into contact with the other main surface of the wiring board, the opposing surface of the second sealing resin layer opposes the contact surface of the second sealing resin layer, and the side surface of the second sealing resin layer connects end edges of the contact surface of the second sealing resin layer and the opposing surface of the second sealing resin layer to each other,
wherein the first component is at least partially exposed from the opposing surface of the first sealing resin layer,
wherein the first sealing resin layer has a linear expansion coefficient smaller than a linear expansion coefficient of the second sealing resin layer, and
wherein the first sealing resin layer has a glass transition temperature higher than a glass transition temperature of the second sealing resin layer and/or the first sealing resin layer has an elastic modulus larger than an elastic modulus of the second sealing resin layer.

### Claim 2 (depends on 1)

The high frequency module according to claim 1, wherein the first component is a semiconductor device.

### Claim 3 (depends on 1)

The high frequency module according to claim 1, wherein a height from the one main surface of the wiring board to the opposing surface of the first sealing resin layer is lower than a height of the second sealing resin layer from the other main surface of the wiring board to the opposing surface of the second sealing resin layer.

### Claim 4 (depends on 1)

The high frequency module according to claim 1, further comprising a connection terminal embedded in the first sealing resin layer,
wherein the connection terminal has one end connected to the one main surface of the wiring board and another end exposed from the opposing surface of the first sealing resin layer.

### Claim 5 (depends on 4)

The high frequency module according to claim 4, wherein the connection terminal is a bump.

### Claim 6 (depends on 1)

The high frequency module according to claim 1, further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer.

### Claim 7 (depends on 2)

The high frequency module according to claim 2, wherein a height from the one main surface of the wiring board to the opposing surface of the first sealing resin layer is lower than a height of the second sealing resin layer from the other main surface of the wiring board to the opposing surface of the second sealing resin layer.

### Claim 8 (depends on 2)

The high frequency module according to claim 2, further comprising a connection terminal embedded in the first sealing resin layer,
wherein the connection terminal has one end connected to the one main surface of the wiring board and another end exposed from the opposing surface of the first sealing resin layer.

### Claim 9 (depends on 3)

The high frequency module according to claim 3, further comprising a connection terminal embedded in the first sealing resin layer,
wherein the connection terminal has one end connected to the one main surface of the wiring board and another end exposed from the opposing surface of the first sealing resin layer.

### Claim 10 (depends on 2)

The high frequency module according to claim 2, further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer.

### Claim 11 (depends on 3)

The high frequency module according to claim 3, further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer.

### Claim 12 (depends on 4)

The high frequency module according to claim 4, further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer.

### Claim 13 (depends on 5)

The high frequency module according to claim 5, further comprising a shield film coating at least the side surface of the first sealing resin layer, a side surface of the wiring board, and the side surface and the opposing surface of the second sealing resin layer.
