# US 11,309,257 B2 · Semiconductor apparatus for detecting or oscillating electromagnetic waves

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- Number: US 11,309,257 B2
- Document ID: US11309257B2
- Status: Granted
- Kind: B2
- Application number: 16/773,112
- Filed: 2020-01-27
- Published: 2020-07-30
- Granted: 2022-04-19
- Earliest claimed: 2019-01-28
- Assignees: Canon Kabushiki Kaisha
- Applicants: Canon Kabushiki Kaisha
- Inventors: Toshifumi Yoshioka; Noriyuki Kaifu
- Web page: https://patentgrep.com/patent/US11309257B2

## CPC

- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- G01R 31/001: {Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing (measuring electromagnetic fields G01R29/08; circuits for generating HV pulses in dielectric strength testing G01R31/14)}
- H05K 9/0081: {Electromagnetic shielding materials, e.g. EMI, RFI shielding (H05K9/0003 takes precedence)}
- H10F 30/10: the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F 77/40: Optical elements or arrangements (surface textures H10F77/70)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A semiconductor apparatus comprising: an element substrate including a plurality of semiconductor devices which detect or oscillate terahertz waves; and an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the terahertz waves in the element substrate and formed of a conductive material, wherein a line width of the electromagnetic shielding is not more than a wavelength of the terahertz waves.

## Claims

### Claim 1

A semiconductor apparatus comprising:
an element substrate including a plurality of semiconductor devices which detect or oscillate terahertz waves; and
an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the terahertz waves in the element substrate and formed of a conductive material, wherein
a line width of the electromagnetic shielding is not more than a wavelength of the terahertz waves, and
a width of each opening portion of the electromagnetic shielding is at least the wavelength of the terahertz waves.

### Claim 2 (depends on 1)

The semiconductor apparatus according to claim 1, wherein the width of each opening portion of the electromagnetic shielding is not more than ½ of a wavelength of millimeter waves.

### Claim 3 (depends on 1)

The semiconductor apparatus according to claim 1, wherein the thickness of the electromagnetic shielding is not more than the wavelength of the terahertz waves.

### Claim 4 (depends on 1)

The semiconductor apparatus according to claim 1, further comprising a circuit board including a circuit which reads signals output from the plurality of semiconductor devices or drives the plurality of semiconductor devices, wherein
the plurality of semiconductor devices are two-dimensionally arranged on the element substrate, and the circuit board and the element substrate are integrally disposed.

### Claim 5 (depends on 1)

The semiconductor apparatus according to claim 1, wherein a lens which controls an optical path of the terahertz waves is disposed in front of the surface detecting or oscillating the terahertz waves in the element substrate.

### Claim 6

A semiconductor apparatus comprising:
an element substrate including a plurality of semiconductor devices which detect or oscillate predetermined electromagnetic waves; and
an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the predetermined electromagnetic waves in the element substrate and formed of a conductive material, wherein
a wavelength of the predetermined electromagnetic waves is in a range of 0.1 mm to 1 mm,
a line width of the electromagnetic shielding is not more than 1 mm, and
a width of each opening portion of the electromagnetic shielding is at least the wavelength of the predetermined electromagnetic waves.

### Claim 7 (depends on 6)

The semiconductor apparatus according to claim 6, wherein the width of each opening portion of the electromagnetic shielding is not more than 25 mm.

### Claim 8 (depends on 7)

The semiconductor apparatus according to claim 7, wherein the width of each opening portion of the electromagnetic shielding is not more than 1.5 mm.

### Claim 9 (depends on 6)

The semiconductor apparatus according to claim 6, wherein the thickness of the electromagnetic shielding is not more than 1 mm.

### Claim 10 (depends on 1)

An imaging system comprising:
the semiconductor apparatus according to claim 1; and
a signal processor which processes signals output from the semiconductor apparatus.

### Claim 11 (depends on 1)

A moving object comprising:
the semiconductor apparatus according to claim 1;
a moving device;
a processing device which acquires information from signals output from the semiconductor apparatus; and
a control device which controls the moving device on the basis of the information.