# US 11,309,245 B2 · Semiconductor device with metal spacers and method for fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,245 B2 - Document ID: US11309245B2 - Status: Granted - Kind: B2 - Application number: 16/665,350 - Filed: 2019-10-28 - Published: 2021-04-29 - Granted: 2022-04-19 - Earliest claimed: 2019-10-28 - Assignees: Nanya Technology Corporation - Applicants: Nanya Technology Corporation - Inventors: Kuo-Hui Su - Web page: https://patentgrep.com/patent/US11309245B2 ## CPC - H10W 20/43: Layouts of interconnections - H10W 20/063: {by forming conductive members before forming protective insulating material} - H10W 20/0633: {using subtractive patterning of the conductive members} - H10W 20/0636: {the conductive members being on sidewalls} - H10W 20/0698: {Local interconnections} - H10W 20/072: {of dielectric parts comprising air gaps} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/46: comprising air gaps - H10W 20/48: Insulating materials thereof - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a plurality of contacts, a plurality of plugs positioned above the plurality of contacts, a plurality of metal spacers positioned above the plurality of plugs; and a plurality of air gaps respectively positioned between the plurality of metal spacers. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate; a plurality of plugs positioned above the substrate; a plurality of metal spacers positioned above the plurality of plugs; and, a plurality of air gaps respectively positioned between the plurality of metal spacers; wherein the plurality of metal spacers comprise a first set of metal spacers, a second set of metal spacers, a third set of metal spacers, and a fourth set of metal spacers; wherein the second set of metal spacers is positioned between the first set of metal spacers and the third set of metal spacers, and the third set of metal spacers is positioned between the second set of metal spacers and the fourth set of metal spacers. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the first set of metal spacers, the second set of metal spacers, and the third set of metal spacers are respectively correspondingly positioned on and electrically connected to the plurality of plugs. ### Claim 3 (depends on 2) The semiconductor device of claim 2, wherein the first set of metal spacers comprises a first metal spacer positioned on one of the plurality of plugs and a second metal spacer attached to a sidewall of the first metal spacer. ### Claim 4 (depends on 3) The semiconductor device of claim 3, wherein a combined bottom width the first metal spacer and the second metal spacer is equal to or greater than a top width of the one of the plurality of plugs. ### Claim 5 (depends on 2) The semiconductor device of claim 2, further comprising a sealing film positioned above the plurality of metal spacers. ### Claim 6 (depends on 5) The semiconductor device of claim 5, wherein the sealing film has a thickness between about 1000 Angstroms and about 5000 Angstroms. ### Claim 7 (depends on 6) The semiconductor device of claim 6, wherein the plurality of air gaps are positioned below the sealing film and respectively corresponding between the first set of metal spacers and the second set of metal spacers and between the third set of metal spacers and the fourth set of metal spacers. ### Claim 8 (depends on 3) The semiconductor device of claim 3, further comprising a first protruding portion extending from a lower portion of the first metal spacer and toward to the second set of metal spacers. ### Claim 9 (depends on 8) The semiconductor device of claim 8, wherein a width of the first protruding portion is equal to or greater than a top width of the one of the plurality of plugs. ### Claim 10 (depends on 9) The semiconductor device of claim 9, wherein the second metal spacer is positioned on the first protruding portion. ### Claim 11 (depends on 8) The semiconductor device of claim 8, further comprising a second protruding portion; wherein the second set of metal spacers comprises a fourth metal spacer positioned on another one of the plurality of plugs and a second metal spacer attached to a sidewall of the fourth metal spacer, and the second protruding portion extend from a lower portion of the fourth metal spacer and toward to the first protruding portion. ### Claim 12 (depends on 2) The semiconductor device of claim 2, wherein the first set of metal spacers comprises a first metal spacer and a second metal spacer attached to a sidewall of the first metal spacer, the third set of metal spacers comprises a fifth metal spacer and a sixth metal spacer attached to a sidewall of the fifth metal spacer; wherein the fifth metal spacer has a same profile as the first metal spacer and the sixth metal spacer has a same profile as the second metal spacer. ### Claim 13 (depends on 2) The semiconductor device of claim 2, wherein the fourth set of metal spacers is a dummy pattern. ### Claim 14 (depends on 1) The semiconductor device of claim 1, wherein the first set of metal spacers comprises a first metal spacer positioned on one of the plurality of plugs and a second metal spacer positioned between the first metal spacer and one of the plurality of air gaps. ### Claim 15 (depends on 14) The semiconductor device of claim 14, wherein a combined bottom width the first metal spacer, the second metal spacer and the air gap is equal to or greater than a top width of the one of the plurality of plugs. ### Claim 16 (depends on 14) The semiconductor device of claim 14, further comprising a first protruding portion extending from a lower portion of the first metal spacer and toward to the air gap. ### Claim 17 (depends on 16) The semiconductor device of claim 16, wherein a combined width of the first protruding portion and the air gap is equal to or greater than a top width of the one of the plurality of plugs. ### Claim 18 (depends on 16) The semiconductor device of claim 16, wherein the second metal spacer is positioned on the first protruding portion. ### Claim 19 A method for fabricating a semiconductor device, comprising: providing a substrate; forming a plurality of plugs above the substrate; forming a plurality of metal spacers above the plurality of plugs; and, forming a plurality of air gaps positioned between the plurality of metal spacers; wherein the plurality of metal spacers comprise a first set of metal spacers, a second set of metal spacers, a third set of metal spacers, and a fourth set of metal spacers; wherein the second set of metal spacers is positioned between the first set of metal spacers and the third set of metal spacers, and the third set of metal spacers is positioned between the second set of metal spacers and the fourth set of metal spacers.