# US 11,309,239 B2 · Electromigration resistant and profile consistent contact arrays

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- Number: US 11,309,239 B2
- Document ID: US11309239B2
- Status: Granted
- Kind: B2
- Application number: 17/075,533
- Filed: 2020-10-20
- Published: 2021-02-04
- Granted: 2022-04-19
- Earliest claimed: 2018-06-21
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Srinivas Pietambaram; Jung Kyu Han; Ali Lehaf; Steve Cho; Thomas Heaton; Hiroki Tanaka; Kristof Darmawikarta; Robert Alan May; Sri Ranga Sai Boyapati
- Web page: https://patentgrep.com/patent/US11309239B2

## CPC

- H10W 70/66: Conductive materials thereof
- H10W 70/095: {of vias therein}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/614: {the multiple chips being integrally enclosed}
- H10W 70/635: {Through-vias}
- H10W 70/685: comprising multiple insulating layers
- H10W 90/00: Package configurations
- H10W 70/63: Vias, e.g. via plugs
- H10W 72/072: {of bump connectors}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07255: {changes in materials}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/2528: {Intermetallic compounds}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/794: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 95/00: Packaging processes not covered by the other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

## Claims

### Claim 1

A composite device assembly comprising:
a plurality of dies, each die of the plurality of dies includes a respective array of contacts;
a substrate extending from a first substrate end to a second substrate end, the plurality of dies are coupled along the substrate, the substrate includes:
one or more embedded multi-die interconnect bridges (EMIB) having associated conductive traces, the one or more EMIB configured to interconnect the plurality of dies; and
a plurality of via assemblies; and
each via assembly of the plurality of via assemblies is interposed between the array of contacts of a die of the plurality of dies and the conductive traces of an EMIB of the one or more EMIB, each via assembly includes:
a base pad in communication with a conductive trace of the EMIB, the base pad including a first conductive material;
a cap in communication with a contact of the first array of contacts, the cap including a solder cap layer including a second conductive material different from the first conductive material, and the cap including an electromigration resistant cap layer, the solder cap layer on the electromigration resistant cap layer, the electromigration resistant cap layer having a third conductive material different from the first and second conductive materials, the electromigration resistant cap layer configured to isolate each of the base pad and the solder cap layer from intermetallic compound growth; and
a via between the base pad and the cap, the via including the first conductive material.

### Claim 2 (depends on 1)

The composite device assembly of claim 1, wherein the electromigration resistant cap layer includes nickel.

### Claim 3 (depends on 2)

The composite device assembly of claim 2, wherein the electromigration resistant cap layer including nickel includes a nickel alloy having one or more of tungsten molybdenum or ruthenium.

### Claim 4 (depends on 1)

The composite device assembly of claim 1, wherein the electromigration resistant cap layer includes cobalt.

### Claim 5 (depends on 1)

The composite device assembly of claim 1, wherein the electromigration resistant cap layer includes iron.

### Claim 6 (depends on 1)

The composite device assembly of claim 1, wherein the electromigration resistant cap layer includes one or more of a cobalt alloy or an iron alloy.

### Claim 7 (depends on 1)

The composite device assembly of claim 1, wherein the plurality of dies includes a first die having a fine pitch array of contacts and a second die having a coarse pitch array of contacts with a greater contact pitch than the fine pitch array of contacts; and
wherein the one or more EMIB includes a first EMIB and a second EMIB.

### Claim 8 (depends on 7)

The composite device assembly of claim 7, wherein the plurality of via assemblies comprises:
a first via assembly array of the plurality of via assemblies, the first via assembly array having a fine via pitch; and
a second via assembly array of the plurality of via assemblies, the second via assembly array having a coarse via pitch.

### Claim 9 (depends on 8)

The composite device assembly of claim 8, wherein small profile caps of the first via assembly array and large profile caps of the second via assembly array have a thickness variation of ten microns or less.

### Claim 10 (depends on 9)

The composite device assembly of claim 9, wherein the thickness variation is 5 microns or less.

### Claim 11

A composite device assembly comprising:
a plurality of dies, each die of the plurality of dies includes a respective array of contacts;
a substrate extending from a first substrate end to a second substrate end, the plurality of dies are coupled along the substrate, the substrate includes:
one or more embedded multi-die interconnect bridges (EMIB) having associated conductive traces, the one or more EMIB configured to interconnect the plurality of dies; and
a plurality of via assemblies; and
each via assembly of the plurality of via assemblies is interposed between the array of contacts of a die of the plurality of dies and the conductive traces of an EMIB of the one or more EMIB, each via assembly includes:
a base pad in communication with a conductive trace of the EMIB, the base pad including a first conductive material;
a cap in communication with a contact of the first array of contacts, the cap including a first cap layer including a second conductive material different from the first conductive material, and the cap including a second cap layer, the first cap layer on the second cap layer, the second cap layer having a third conductive material different from the first and second conductive materials; and
a via between the base pad and the cap, the via including the first conductive material.

### Claim 12 (depends on 11)

The composite device assembly of claim 11, wherein the second cap layer includes nickel.

### Claim 13 (depends on 12)

The composite device assembly of claim 12, wherein the second cap layer including nickel includes a nickel alloy having one or more of tungsten molybdenum or ruthenium.

### Claim 14 (depends on 11)

The composite device assembly of claim 11, wherein the second cap layer includes cobalt.

### Claim 15 (depends on 11)

The composite device assembly of claim 11, wherein the second cap layer includes iron.

### Claim 16 (depends on 11)

The composite device assembly of claim 11, wherein the second cap layer includes one or more of a cobalt alloy or an iron alloy.

### Claim 17 (depends on 11)

The composite device assembly of claim 11, wherein the plurality of dies includes a first die having a fine pitch array of contacts and a second die having a coarse pitch array of contacts with a greater contact pitch than the fine pitch array of contacts; and
wherein the one or more EMIB includes a first EMIB and a second EMIB.

### Claim 18 (depends on 17)

The composite device assembly of claim 17, wherein the plurality of via assemblies comprises:
a first via assembly array of the plurality of via assemblies, the first via assembly array having a fine via pitch; and
a second via assembly array of the plurality of via assemblies, the second via assembly array having a coarse via pitch.

### Claim 19 (depends on 18)

The composite device assembly of claim 18, wherein small profile caps of the first via assembly array and large profile caps of the second via assembly array have a thickness variation of ten microns or less.

### Claim 20 (depends on 19)

The composite device assembly of claim 19, wherein the thickness variation is 5 microns or less.