# US 11,309,231 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,231 B2 - Document ID: US11309231B2 - Status: Granted - Kind: B2 - Application number: 16/462,503 - Filed: 2017-02-21 - Published: 2021-06-10 - Granted: 2022-04-19 - Earliest claimed: 2017-02-21 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Hiroaki Ichinohe; Katsumi Miyawaki; Takao Moriwaki - Web page: https://patentgrep.com/patent/US11309231B2 ## CPC - H10W 40/778: {in encapsulations} - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 40/25: characterised by their materials - H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 70/411: {Chip-supporting parts, e.g. die pads} - H10W 70/461: {specially adapted for cooling} - H10W 72/00: Interconnections or connectors in packages - H10W 72/071: {Connecting or disconnecting} - H10W 74/10: characterised by their shape or disposition - H10W 74/40: characterised by their materials - H10W 70/457: {of metallic layers on leadframes} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/127: {characterised by arrangements for sealing or adhesion} - H10W 90/753: {between laterally-adjacent chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a heat sink, a semiconductor chip and a circuit board that are fixed to the heat sink with a fixing material, plural leads connected to the semiconductor chip and the circuit board via wires, and mold resin provided on the heat sink. The mold resin covers parts of the leads, the wires, and the semiconductor chip, and exposes remainders of the leads. The surfaces of the leads and the heat sink are provided with roughened plating having a surface roughness RMS=150 nm or more. The fixing material is solder or sintered silver. The water absorption rate of the mold resin is 0.24% or less. ## Claims ### Claim 1 A semiconductor device comprising: a heat sink; a semiconductor chip fixed to the heat sink with a fixing material; a lead connected to the semiconductor chip via a wire; and mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead, the fixing material is solder or sintered silver, a water absorption rate of the mold resin is 0.24% or less, and a surface roughness of the roughened plating is RMS=250 nm or less. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor chip is formed of a wide bandgap semiconductor material, and a thermal decomposition starting temperature of the mold resin is 300° C. or more. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein materials of the heat sink and the lead are copper, copper molybdenum alloy, copper tungsten alloy, or aluminum, and a coefficient of linear expansion of the mold resin is in a range of 9 to 19 ppm. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the heat sink is formed of a material having a thermal conductivity of 200 W/mK or more. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein grooves extending so as to surround the semiconductor chip are provided at four corners of the surface of the heat sink. ### Claim 6 A semiconductor device comprising: a heat sink; a semiconductor chip fixed to the heat sink with a fixing material; a lead connected to the semiconductor chip via a wire; and mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead, the fixing material is solder or sintered silver, a water absorption rate of the mold resin is 0.24% or less, the semiconductor chip is formed of a wide bandgap semiconductor material, and a thermal decomposition starting temperature of the mold resin is 300° C. or more. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein materials of the heat sink and the lead are copper, copper molybdenum alloy, copper tungsten alloy, or aluminum, and a coefficient of linear expansion of the mold resin is in a range of 9 to 19 ppm. ### Claim 8 (depends on 6) The semiconductor device according to claim 6, wherein the heat sink is formed of a material having a thermal conductivity of 200 W/mK or more. ### Claim 9 (depends on 6) The semiconductor device according to claim 6, wherein grooves extending so as to surround the semiconductor chip are provided at four corners of the surface of the heat sink. ### Claim 10 A semiconductor device comprising: a heat sink; a semiconductor chip fixed to the heat sink with a fixing material; a lead connected to the semiconductor chip via a wire; and mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead, the fixing material is solder or sintered silver, a water absorption rate of the mold resin is 0.24% or less, materials of the heat sink and the lead are copper, copper molybdenum alloy, copper tungsten alloy, or aluminum, and a coefficient of linear expansion of the mold resin is in a range of 9 to 19 ppm. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, wherein the heat sink is formed of a material having a thermal conductivity of 200 W/mK or more. ### Claim 12 (depends on 10) The semiconductor device according to claim 10, wherein grooves extending so as to surround the semiconductor chip are provided at four corners of the surface of the heat sink. ### Claim 13 A semiconductor device comprising: a heat sink; a semiconductor chip fixed to the heat sink with a fixing material; a lead connected to the semiconductor chip via a wire; and mold resin that is provided on the heat sink so as to cover a part of the lead, the wire, and the semiconductor chip and has a glass transition temperature of 195° C. or more, wherein roughened plating having a surface roughness of RMS=150 nm or more is provided on a surface overlapping the mold resin in the heat sink and a surface overlapping the mold resin in the lead, the fixing material is solder or sintered silver, a water absorption rate of the mold resin is 0.24% or less, and grooves extending so as to surround the semiconductor chip are provided at four corners of the surface of the heat sink. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, wherein the heat sink is formed of a material having a thermal conductivity of 200 W/mK or more.