# US 11,309,230 B1 · Power electronic modules including one or more layers including a polymer produced via a frontal ring-opening polymerization process

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- Number: US 11,309,230 B1
- Document ID: US11309230B1
- Status: Granted
- Kind: B1
- Application number: 17/036,096
- Filed: 2020-09-29
- Published: 2022-03-31
- Granted: 2022-04-19
- Earliest claimed: 2020-09-29
- Assignees: Toyota Motor Engineering & Manufacturing North America, Inc.
- Applicants: Toyota Motor Engineering & Manufacturing North America, Inc.
- Inventors: Shailesh N. Joshi
- Web page: https://patentgrep.com/patent/US11309230B1

## CPC

- H10W 40/251: {Organics}
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 70/02: of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04)
- H10W 72/073: {of die-attach connectors}
- H10W 72/30: Die-attach connectors
- H10W 72/50: Bond wires
- H10W 70/692: Ceramics or glasses
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In one or more embodiments of the present disclosure, a power electronic module may be described. The power electronic module may comprise a power semiconductor device, a substrate coupled to the power semiconductor device, and a base plate coupled to the substrate. The substrate may include from 50 weight percent (wt. %) to 99.9 wt. % of a poly(dicyclopentadiene) polymer. In one or more other embodiments of the present disclosure, a method for manufacturing a power electronic module may be described. The method may include disposing a solution on a base plate. The solution may include dicyclopentadiene monomer, a ruthenium-based catalyst, and a trialkyl phosphite initiator. The method may further include initiating a polymerization front within the solution to produce a substrate formed directly on the base plate. Furthermore, the method may include coupling a power semiconductor device on the substrate to produce the power electronic module.

## Claims

### Claim 1

A power electronic module comprising:
a power semiconductor device;
a substrate coupled to the power semiconductor device, wherein the substrate comprises from 50 weight percent (wt. %) to 99.9 wt. % of a poly(dicyclopentadiene) polymer; and
a base plate coupled to the substrate.

### Claim 2 (depends on 1)

The power electronic module of claim 1, wherein the power semiconductor device comprises an insulated gate bipolar transistor (IGBT), a reverse conducting insulated gate bipolar transistor (RC-IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a power metal-oxide-semiconductor field-effect transistor (MOSFET), a diode, a power diode, a transistor, a power bipolar transistor, or combinations thereof.

### Claim 3 (depends on 1)

The power electronic module of claim 1, wherein the power semiconductor device comprises silicon carbide (SiC), silicon dioxide (SiO2), aluminum nitride (AlN), gallium nitride (GaN), boron nitride (BN), or combinations thereof.

### Claim 4 (depends on 1)

The power electronic module of claim 1, wherein the poly(dicyclopentadiene) polymer is a homopolymer.

### Claim 5 (depends on 1)

The power electronic module of claim 1, wherein the poly(dicyclopentadiene) polymer is an interpolymer.

### Claim 6 (depends on 1)

The power electronic module of claim 1, wherein the poly(dicyclopentadiene) polymer has a dielectric strength of from 5.0 kilovolts per micron (kV/μm) to 15 kV/μm.

### Claim 7 (depends on 1)

The power electronic module of claim 1, wherein the poly(dicyclopentadiene) polymer has a Young's modulus of from 5.0 gigapascals (GPa) to 15 GPa.

### Claim 8 (depends on 1)

The power electronic module of claim 1, wherein the poly(dicyclopentadiene) polymer has a coefficient of thermal expansion (CTE) of from 5.0 part per million per degrees Celsius (ppm/° C.) to 10 ppm/° C.

### Claim 9 (depends on 1)

The power electronic module of claim 1, wherein the substrate is formed directly on the base plate.

### Claim 10 (depends on 1)

The power electronic module of claim 1, wherein the substrate further comprises one or more additives or fillers in an amount of from 0.1 wt. % to 10 wt. %.

### Claim 11

A method for manufacturing a power electronic module, the method comprising:
disposing a solution on a base plate, the solution comprising dicyclopentadiene monomer, a ruthenium-based catalyst, and a trialkyl phosphite initiator;
initiating a polymerization front within the solution to produce a substrate formed directly on the base plate; and
coupling a power semiconductor device on the substrate to produce the power electronic module.

### Claim 12 (depends on 11)

The method of claim 11, wherein the polymerization front is initiated by a thermal frontal polymerization (TFP) method, a photofrontal polymerization method, or an isothermal frontal polymerization (IFP) method.

### Claim 13 (depends on 11)

The method of claim 11, further comprising electroplating a coupling layer onto the surface of the substrate.

### Claim 14 (depends on 13)

The method of claim 13, wherein the power semiconductor device is coupled to the coupling layer via a layer of solder.

### Claim 15 (depends on 11)

The method of claim 11, wherein the substrate comprises from 50 wt. % to 99.9 wt. % of a poly(dicyclopentadiene) polymer.

### Claim 16 (depends on 11)

The method of claim 11, wherein the power semiconductor device comprises an insulated gate bipolar transistor (IGBT), a reverse conducting insulated gate bipolar transistor (RC-IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a power metal-oxide-semiconductor field-effect transistor (MOSFET), a diode, a power diode, a transistor, a power bipolar transistor, or combinations thereof.

### Claim 17 (depends on 11)

The method of claim 11, wherein the power semiconductor device comprises silicon carbide (SiC), silicon dioxide (SiO2), aluminum nitride (AlN), gallium nitride (GaN), boron nitride (BN), or combinations thereof.

### Claim 18 (depends on 11)

The method of claim 11, wherein the poly(dicyclopentadiene) polymer has a dielectric strength of from 5.0 kilovolts per micron (kV/μm) to 15 kV/μm.

### Claim 19 (depends on 11)

The method of claim 11, wherein the poly(dicyclopentadiene) polymer has a Young's modulus of from 5.0 gigapascals (GPa) to 15 GPa.

### Claim 20 (depends on 11)

The method of claim 11, wherein the poly(dicyclopentadiene) polymer has a coefficient of thermal expansion (CTE) of from 5.0 part per million per degrees Celsius (ppm/° C.) to 10 ppm/° C.