# US 11,309,219 B2 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,219 B2 - Document ID: US11309219B2 - Status: Granted - Kind: B2 - Application number: 16/809,649 - Filed: 2020-03-05 - Published: 2021-03-18 - Granted: 2022-04-19 - Earliest claimed: 2019-09-17 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Akira Tomono; Keisuke Tokubuchi; Takanobu Ono - Web page: https://patentgrep.com/patent/US11309219B2 ## CPC - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10W 74/014: {using batch processing} - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10W 74/114: {by a substrate and the encapsulations} - H10W 90/00: Package configurations - H10W 95/00: Packaging processes not covered by the other groups of this subclass - H10P 72/7416: {used during dicing or grinding} - H10P 72/742: {involving stretching of the auxiliary support post dicing} - H10P 72/7422: {used to protect an active side of a device or wafer} - H10W 72/01336: {in solid form, e.g. by using a powder or by laminating a foil} - H10W 72/01351: {Changing the shapes of die-attach connectors} - H10W 72/0198: {batch processes} - H10W 72/072: {of bump connectors} - H10W 72/07232: {Compression bonding, e.g. thermocompression bonding} - H10W 72/073: {of die-attach connectors} - H10W 72/07332: {Compression bonding, e.g. thermocompression bonding} - H10W 72/07338: {hardening the adhesive by curing, e.g. thermosetting} - H10W 72/07352: {changes in structures or sizes} - H10W 72/07353: {changes in shapes} - H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/321: {Structures or relative sizes of die-attach connectors} - H10W 72/334: {Cross-sectional shape, i.e. in side view} - H10W 72/354: {comprising polymers} - H10W 72/865: {Die-attach connectors and bond wires} - H10W 72/877: {Bump connectors and die-attach connectors} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 90/231: {the stacked chips being on both top and bottom sides of an auxiliary carrier having no electrical connection structure} - H10W 90/24: at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape - H10W 90/271: {the chips having passive surfaces facing each other, i.e. in a back-to-back arrangement} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/732: {between stacked chips} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/752: {between stacked chips} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method for manufacturing a semiconductor device of an embodiment includes: dividing a semiconductor wafer including a plurality of chip areas each having a columnar electrode and dicing areas, along the dicing areas to form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips while filling parts of the first resin film in gaps each present between adjacent ones of the plurality of semiconductor chips; forming trenches narrower in width than the gaps in the first resin film filled in the gaps; and sequentially picking up the plurality of semiconductor chips each having the first resin film, and mounting the picked semiconductor chip on a substrate. ## Claims ### Claim 1 A method for manufacturing a semiconductor device comprising: dividing a semiconductor wafer including a plurality of chip areas which each have a columnar electrode and dicing areas which demarcate the plurality of chip areas, along the dicing areas to separate the plurality of chip areas and thus form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips from a first surface side, having the columnar electrodes, of the semiconductor wafer while filling parts of the first resin film in gaps that are each present between adjacent ones of the plurality of semiconductor chips; dividing the first resin film into parts corresponding to the plurality of semiconductor chips by forming trenches narrower in width than the gaps in the first resin film that is filled in the gaps while leaving the first resin film on side surfaces of the divided semiconductor chips; and sequentially picking up the plurality of semiconductor chips each having a part of the divided first resin film and mounting the picked semiconductor chip on a substrate with the first resin film therebetween while joining the columnar electrode of the semiconductor chip to an electrode of the substrate, wherein the dividing the semiconductor wafer includes: sticking a second resin film on a second surface, opposite to the first surface, of the semiconductor wafer; and forming first trenches from the first surface side of the semiconductor wafer along the dicing areas while maintaining a wafer shape of the semiconductor wafer with the second resin film. ### Claim 2 (depends on 1) The method according to claim 1, wherein the sticking and filling the first resin film includes: sticking the first resin film on the plurality of semiconductor chips under a reduced pressure; and filling the parts of the first resin film in the gaps by exposing the plurality of semiconductor chips on which the first resin film is stuck to an atmosphere. ### Claim 3 (depends on 2) The method according to claim 2, wherein the sticking and filling the first resin film further includes heating at least the parts, corresponding to the gaps, of the first resin film exposed to the atmosphere. ### Claim 4 (depends on 1) The method according to claim 1, wherein the sticking and filling the first resin film includes: sticking the first resin film on the plurality of semiconductor chips; and filling the parts of the first resin film in the gaps by heating at least the parts, corresponding to the gaps, of the first resin film stuck on the plurality of semiconductor chips. ### Claim 5 (depends on 1) The method according to claim 1, wherein the dividing the first resin film includes cutting the first resin film filled in the gaps with a blade narrower in width than the gaps. ### Claim 6 (depends on 5) The method according to claim 5, wherein the dividing the first resin film further includes expanding the first resin film cut with the blade in a planer direction of the first resin film. ### Claim 7 (depends on 1) The method according to claim 1, wherein the dividing the first resin film includes irradiating the first resin film filled in the gaps with laser light to melt-cut the first resin film. ### Claim 8 (depends on 7) The method according to claim 7, wherein the dividing the first resin film further includes expanding the first resin film melt-cut with the laser light in a planar direction of the first resin film. ### Claim 9 (depends on 1) The method according to claim 1, wherein the dividing the first resin film includes expanding the first resin film in a planar direction of the first resin film to divide the first resin film. ### Claim 10 (depends on 1) The method according to claim 1, wherein the dividing the semiconductor wafer includes: irradiating a second surface, opposite to the first surface, of the semiconductor wafer with laser light along the dicing areas to form modified layers; grinding the second surface of the semiconductor wafer; sticking a second resin film on the ground second surface of the semiconductor wafer; and expanding the second resin film in a planar direction of the second resin film to divide the semiconductor wafer. ### Claim 11 (depends on 1) The method according to claim 1, wherein a fillet is formed on a side surface of the semiconductor chip mounted on the substrate using the first resin film. ### Claim 12 A method for manufacturing a semiconductor device comprising: dividing a semiconductor wafer including a plurality of chip areas which each have a columnar electrode and dicing areas which demarcate the plurality of chip areas, along the dicing areas to separate the plurality of chip areas and thus form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips from a first surface side having the columnar electrodes, of the semiconductor wafer while filling parts of the first resin film in gaps that art each present between adjacent ones of the plurality of semiconductor chips; dividing the first resin film into parts corresponding to the plurality of semiconductor chips by forming trenches narrower in width than the gaps in the first resin film that is filled in the gaps while leaving the first resin film on side surfaces of the divided semiconductor chips; and sequentially picking up the plurality of semiconductor chips each having a part of the divided first resin film and mounting the picked semiconductor chip on a substrate with the first resin film therebetween while joining the columnar electrode of the semiconductor chip to an electrode of the substrate, wherein the sticking and filling the first resin film includes: sticking the first resin film on the plurality of semiconductor chips under a reduced pressure; and filling the parts of the first resin film in the gaps by exposing the plurality of semiconductor chips on which the first resin film is stuck to an atmosphere. ### Claim 13 (depends on 12) The method according to claim 12, wherein the sticking and filling the first resin film further includes heating at least the parts, corresponding to the gaps, of the first resin film exposed to the atmosphere. ### Claim 14 (depends on 12) The method according to claim 12, wherein the dividing the first resin film includes cutting the first resin film filled in the gaps with a blade narrower in width than the gaps. ### Claim 15 (depends on 12) The method according to claim 12, wherein the dividing the first resin film includes irradiating the first resin film filled in the gaps with laser light to melt-cut the first resin film. ### Claim 16 A method for manufacturing a semiconductor device comprising: dividing a semiconductor wafer including a plurality of chip areas which each have a columnar electrode and dicing areas which demarcate the plurality of chip areas, along the dicing areas to separate the plurality of chip areas and thus form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips from a first surface side having the columnar electrodes, of the semiconductor wafer while filling parts of the first resin film in gaps that are each present between adjacent ones of the plurality of semiconductor chips; dividing the first resin film into parts corresponding to the plurality of semiconductor chips by forming trenches narrower in width than the gaps in the first resin film that is filled in the gaps while leaving the first resin film on side surfaces of the divided semiconductor chips; and sequentially picking up the plurality of semiconductor chips each having a part of the divided first resin film and mounting the picked semiconductor chip on a substrate with the first resin film therebetween while joining the columnar electrode of the semiconductor chip to an electrode of the substrate, wherein the dividing the semiconductor wafer includes: irradiating a second surface, opposite to the first surface, of the semiconductor wafer with laser light along the dicing areas to form modified layers; grinding the second surface of the semiconductor wafer; sticking a second resin film on the ground second surface of the semiconductor wafer; and expanding the second resin film in a planar direction of the second resin film to divide the semiconductor wafer. ### Claim 17 (depends on 16) The method according to claim 16, wherein the sticking and filling the first resin film includes: sticking the first resin film on the plurality of semiconductor chips under a reduced pressure; and filling the parts of the first resin film in the gaps by exposing the plurality of semiconductor chips on which the first resin film is stuck to an atmosphere. ### Claim 18 (depends on 17) The method according to claim 17, wherein the sticking and filling the first resin film further includes heating at least the parts corresponding to the gaps of the first resin film exposed to the atmosphere. ### Claim 19 (depends on 16) The method according to claim 16, wherein the dividing the first resin film includes cutting the first resin film filled in the gaps with a blade narrower in width than the gaps.