# US 11,309,212 B2 · Semiconductor device structure and methods of forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,212 B2 - Document ID: US11309212B2 - Status: Granted - Kind: B2 - Application number: 16/944,018 - Filed: 2020-07-30 - Published: 2022-02-03 - Granted: 2022-04-19 - Earliest claimed: 2020-07-30 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Lin-Yu Huang; Li-Zhen Yu; Chia-Hao Chang; Cheng-Chi Chuang; Kuan-Lun Cheng; Chih-Hao Wang - Web page: https://patentgrep.com/patent/US11309212B2 ## CPC - H10W 20/46: comprising air gaps - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/0595: {by using multiple deposition steps separated by etching steps} - H10W 20/072: {of dielectric parts comprising air gaps} - H10W 20/075: {of multilayered thin functional dielectric layers} - H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)} - H10W 20/43: Layouts of interconnections - H10W 20/495: {Capacitive arrangements or effects of, or between wiring layers} - H10W 20/036: {the barrier, adhesion or liner layers being within a main fill metal} - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first conductive structure disposed over the device, and the first conductive structure includes a first sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer disposed on the first portion, a second conductive structure disposed adjacent the first conductive structure, and the second conductive structure includes a second sidewall having a third portion and a fourth portion. The semiconductor device structure further includes a second spacer layer disposed on the third portion, and an air gap is formed between the first conductive structure and the second conductive structure. The second portion, the first spacer layer, the fourth portion, and the second spacer layer are exposed to the air gap. ## Claims ### Claim 1 A semiconductor device structure, comprising: a device; a first conductive structure disposed over the device, wherein the first conductive structure comprises a first sidewall including a first portion and a second portion; a first spacer layer disposed on the first portion of the first sidewall of the first conductive structure; a second conductive structure disposed adjacent the first conductive structure, wherein the second conductive structure comprises a second sidewall including a third portion and a fourth portion; and a second spacer layer disposed on the third portion of the second sidewall of the second conductive structure, wherein an air gap is formed between the first conductive structure and the second conductive structure, and wherein the second portion of the first sidewall of the first conductive structure, the first spacer layer, the fourth portion of the second sidewall of the second conductive structure, and the second spacer layer are exposed to the air gap. ### Claim 2 (depends on 1) The semiconductor device structure of claim 1, wherein the air gap surrounds the first spacer layer, and the first spacer layer surrounds the first portion of the first sidewall of the first conductive structure. ### Claim 3 (depends on 2) The semiconductor device structure of claim 2, wherein the first sidewall of the first conductive structure includes four surfaces. ### Claim 4 (depends on 1) The semiconductor device structure of claim 1, wherein the first conductive structure further comprises a first conductive feature. ### Claim 5 (depends on 4) The semiconductor device structure of claim 4, wherein the first conductive structure further comprises a second conductive feature disposed over the first conductive feature. ### Claim 6 (depends on 4) The semiconductor device structure of claim 4, wherein the first conductive structure further comprises a first barrier layer, and wherein the first conductive feature is disposed on the first barrier layer. ### Claim 7 (depends on 6) The semiconductor device structure of claim 6, wherein the first conductive structure further comprises a second barrier layer disposed on the first conductive feature and a second conductive feature disposed on the second barrier layer. ### Claim 8 (depends on 1) The semiconductor device structure of claim 1, wherein the air gap has a varying width. ### Claim 9 (depends on 8) The semiconductor device structure of claim 8, wherein the width of the air gap decreases in a direction away from the device. ### Claim 10 A semiconductor device structure, comprising: a device; a first dielectric material disposed over the device; a first conductive structure disposed over the first dielectric material, wherein the first conductive structure comprises a first sidewall; a first spacer layer disposed on the first sidewall of the first conductive structure; a second conductive structure disposed adjacent the first conductive structure, wherein the second conductive structure comprises a second sidewall; a second spacer layer disposed on the second sidewall of the second conductive structure; and a sealing material disposed between the first spacer layer and the second spacer layer, wherein an air gap is defined by the first dielectric material, the first spacer layer, the second spacer layer, and the sealing material. ### Claim 11 (depends on 10) The semiconductor device structure of claim 10, wherein the first spacer layer and the second spacer layer are in contact with the first dielectric material. ### Claim 12 (depends on 11) The semiconductor device structure of claim 11, wherein the first spacer layer surrounds the first sidewall of the first conductive structure, and the air gap surrounds the first spacer layer. ### Claim 13 (depends on 10) The semiconductor device structure of claim 10, wherein the air gap has a varying width. ### Claim 14 (depends on 13) The semiconductor device structure of claim 13, wherein the width of the air gap decreases in a direction away from the device. ### Claim 15 (depends on 10) The semiconductor device structure of claim 10, further comprising a second dielectric material disposed on the sealing material, the first conductive structure, and the second conductive structure. ### Claim 16 A semiconductor device structure, comprising: a device; a first conductive structure disposed over the device, wherein the first conductive structure comprises: a first barrier layer; a first conductive material disposed on the first barrier layer; a second barrier layer disposed on the first barrier layer and the first conductive material; and a second conductive material disposed on the second barrier layer; and a first spacer layer disposed on the second barrier layer and a first portion of the first barrier layer, wherein the first spacer layer and a second portion of the first barrier layer is exposed to an air gap. ### Claim 17 (depends on 16) The semiconductor device structure of claim 16, further comprising: a second conductive structure disposed adjacent the first conductive structure, wherein the second conductive structure comprises: a third barrier layer; a third conductive material disposed on the third barrier layer; a fourth barrier layer disposed on the third barrier layer and the third conductive material; and a fourth conductive material disposed on the fourth barrier layer. ### Claim 18 (depends on 17) The semiconductor device structure of claim 17, further comprising a second spacer layer disposed on the fourth barrier layer and a first portion of the third barrier layer, wherein the second spacer layer and a second portion of the third barrier layer is exposed to the air gap. ### Claim 19 (depends on 18) The semiconductor device structure of claim 18, further comprising a sealing material disposed between the first and second spacer layers. ### Claim 20 (depends on 19) The semiconductor device structure of claim 19, further comprising a dielectric material disposed on the sealing material, the first conductive structure, and the second conductive structure.