# US 11,309,210 B2 · Self aligned buried power rail

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- Number: US 11,309,210 B2
- Document ID: US11309210B2
- Status: Granted
- Kind: B2
- Application number: 16/568,902
- Filed: 2019-09-12
- Published: 2020-01-02
- Granted: 2022-04-19
- Earliest claimed: 2017-04-07
- Assignees: GlobalFoundries U.S. Inc.
- Applicants: Globalfoundries U.S. Inc.
- Inventors: Nicholas V. Licausi; Guillaume Bouche; Lars W. Liebmann
- Web page: https://patentgrep.com/patent/US11309210B2

## CPC

- H10W 20/021: {of interconnections within wafers or substrates}
- H10B 12/056: {the transistor being a FinFET}
- H10D 84/8311: {the IGFETs characterised by having different channel structures}
- H10D 84/834: {comprising FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/427: {Power or ground buses}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.

## Claims

### Claim 1

A structure comprising:
a substrate comprising semiconductor material;
a partial fin structure of comprising semiconductor material of the substrate and comprising a first dimension;
at least one additional fin structure comprising the semiconductor material of the substrate, and having a second dimension different than the first dimension;
gap fill insulator material separating and between the partial fin structure and the at least one additional fin structure;
a buried power rail comprising conductive metal fill material aligned with and over the partial fin structure and adjacent to the at least one additional fin structure; and
a contact to the buried power rail.

### Claim 2 (depends on 1)

The structure of claim 1, wherein a space between the buried power rail and the at least one additional fin structure is substantially equal to fin to fin spacing and the at least one additional fin structure comprises plural neighboring fin structures.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the buried power rail is a metal fill material over a liner of conductive barrier material.

### Claim 4 (depends on 3)

The structure of claim 3, wherein the liner of conductive barrier material is a multi-layer liner.

### Claim 5 (depends on 4)

The structure of claim 4, wherein the multi-layer liner comprises a first dielectric film to isolate electrically the substrate material and a single or bi-layer of barrier material.

### Claim 6 (depends on 5)

The structure of claim 5, wherein the single or bi-layer of barrier material is one of TaN, TiN, Co or Ru.

### Claim 7 (depends on 5)

The structure of claim 5, wherein the metal fill material is a high melting temperature metal.

### Claim 8 (depends on 3)

The structure of claim 3, further comprising a capping material on exposed surfaces of the metal fill material and the liner.

### Claim 9 (depends on 8)

The structure of claim 8, the gap fill insulator material is on the capping material.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the buried power rail is partially recessed within the partial fin structure of substrate material.

### Claim 11 (depends on 1)

The structure of claim 1, wherein the gap fill insulator material is recessed, the contact is within the recessed gap fill insulator material contacting to the buried power rail, the gap fill insulator material is within a trench between the partial fin structure and the at least one additional fin structure, and contacts facing sides of the partial fin structure and the at least one additional fin structure and a top surface of the substrate within the trench.

### Claim 12 (depends on 1)

The structure of claim 1, wherein the partial fin structure is wider than the additional fin structure.

### Claim 13 (depends on 12)

The structure of claim 12, wherein the partial fin structure is shorter in height than the additional fin structure.

### Claim 14 (depends on 13)

The structure of claim 13, wherein the buried power rail has a same width profile as the partial fin structure.

### Claim 15 (depends on 14)

The structure of claim 14, wherein the contact is narrower than the buried power rail.

### Claim 16 (depends on 14)

The structure of claim 14, wherein the contact is wider than the buried power rail.

### Claim 17 (depends on 12)

The structure of claim 12, wherein the partial fin structure is located between two, adjacent fin structures of the at least one additional fin structure.

### Claim 18 (depends on 17)

The structure of claim 17, further comprising gap insulator fill material separating the partial fin structures of the at least one additional fin structure.

### Claim 19 (depends on 18)

The structure of claim 18, wherein the buried power rail is lined with dielectric material formed on surfaces of a trench in the gap fill insulator material.

### Claim 20 (depends on 19)

The structure of claim 19, further comprising a conductive liner material between the dielectric material and material of the buried power rail, wherein the conductive liner material also lines the contact.