# US 11,309,208 B2 · Electrostatic chuck and method for manufacturing protrusions thereof

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- Number: US 11,309,208 B2
- Document ID: US11309208B2
- Status: Granted
- Kind: B2
- Application number: 17/040,888
- Filed: 2019-03-28
- Published: 2021-01-07
- Granted: 2022-04-19
- Earliest claimed: 2018-03-29
- Assignees: Beijing Naura Microelectronics Equipment Co., Ltd.
- Applicants: Beijing Naura Microelectronics Equipment Co., Ltd.
- Inventors: Hua Ye; Quanyu Shi; Hougong Wang; Jinguo Zheng
- Web page: https://patentgrep.com/patent/US11309208B2

## CPC

- H10P 72/722: {Details of electrostatic chucks}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H10P 72/0432: {mainly by conduction}
- H10P 72/72: using electrostatic chucks
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides an electrostatic chuck (ESC) and a method for manufacturing the plurality of protrusions of the ESC. The electrostatic chuck includes a support surface for carrying a workpiece and the plurality of protrusions distributed at intervals on the support surface. The protrusions are formed by a hydrogen-free amorphous carbon with a resistivity ranging from 10−4 Ω·cm˜109Ω·cm. For the ESC provided by the present disclosure, the protrusions are formed by the hydrogen-free amorphous carbon and have a high hardness and a good wear resistance, which may effectively prevent a generation of particles. As such, the negative impact of the particles on the semiconductor process may be avoided, and the hydrogen does not dissociate in a high-temperature environment. Thereby, a problem that the protrusions may easily fall off and may not be suitable in the high-temperature environment (above 250° C.) may be solved.

## Claims

### Claim 1

A method for manufacturing an electrostatic chuck, comprising:
forming a dielectric layer wrapping around an electrode of the electrostatic chuck;
forming a patterned mask over the dielectric layer;
generating a carbon plasma from a graphite target in a chamber and depositing a hydrogen-free amorphous carbon layer over the dielectric layer at a deposition temperature of less than or equal to about 80° C.; and
removing the patterned mask to form hydrogen-free amorphous carbon protrusions, wherein the hydrogen-free amorphous carbon protrusions have a resistivity ranging from 10−4Ω·cm˜109Ω·cm to avoid hydrogen dissociation and fall off the hydrogen-free amorphous carbon protrusions, and
wherein generating the carbon plasma from the graphite target and depositing the hydrogen-free amorphous carbon layer include:
placing the graphite target in a first region of the chamber,
applying an electrical arc to cause the graphite target in the first region of the chamber to generate the carbon plasma,
applying a filter magnetic field in a second region of the chamber to filter out macroparticles and atomic groups from the carbon plasma, and
applying a focus magnetic field in a third region of the chamber to move the filtered carbon plasma onto a surface of the dielectric layer of the electrostatic chuck.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
after forming the patterned mask and before depositing the hydrogen-free amorphous carbon layer, depositing an adhesive layer over the patterned mask, followed by depositing the hydrogen-free amorphous carbon layer over the adhesive layer;
wherein removing the patterned mask includes forming adhesive parts on the dielectric layer, each adhesive part being under one of the hydrogen-free amorphous carbon protrusions.

### Claim 3 (depends on 2)

The method of claim 2, wherein a material of the adhesive layer includes a metal, the metal including titanium or chromium.

### Claim 4 (depends on 1)

The method of claim 1, wherein
a height of the hydrogen-free amorphous carbon protrusion ranges from 1 μm˜3 μm.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the electrostatic chuck comprises:
a support surface provided by the dielectric layer for carrying a workpiece; and
adhesive parts on the support surface of the dielectric layer, wherein the hydrogen-free amorphous carbon protrusions are formed on the adhesive parts in a one-to-one correspondence.

### Claim 6 (depends on 5)

The method according to claim 5, wherein further comprising:
determining a height of the hydrogen-free amorphous carbon protrusions based on a size of particles generated by friction between the workpiece and the dielectric layer, such that the generated particles are confined on the support surface and between adjacent protrusions without touching a surface of the workpiece.