# US 11,309,207 B2 · Grounding mechanism for multi-layer for electrostatic chuck, and related methods

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- Number: US 11,309,207 B2
- Document ID: US11309207B2
- Status: Granted
- Kind: B2
- Application number: 16/938,547
- Filed: 2020-07-24
- Published: 2021-01-28
- Granted: 2022-04-19
- Earliest claimed: 2019-07-24
- Assignees: Entegris, Inc.
- Applicants: Entegris, Inc.
- Inventors: Steven Donnell; Jakub Rybczynski; Chun Wang Chan; Yan Liu
- Web page: https://patentgrep.com/patent/US11309207B2

## CPC

- H10P 72/722: {Details of electrostatic chucks}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Described are multi-layer electrostatic chucks used to secure and support a wafer substrate during wafer processing, and related methods, wherein the chuck includes a grounding structure that includes a grounding layer and a grounding pin.

## Claims

### Claim 1

A multi-layer electrostatic chuck assembly comprising:
a dielectric layer;
a conductive field coating above the dielectric layer;
an electrode layer below the dielectric layer;
an insulator layer below the electrode layer;
a polymeric bonding layer below the dielectric layer and above the insulator layer;
a grounding layer above the polymeric bonding layer, below the dielectric layer, and electrically connected to the conductive field coating;
a grounding pin opening extending from a location of the insulator, through the polymeric bonding layer to the grounding layer; and
a grounding pin located in the grounding pin opening, the grounding pin being electrically connected to the grounding layer.

### Claim 2 (depends on 1)

The assembly of claim 1, wherein the grounding layer contacts an upper surface of the polymeric bonding layer and a lower surface of the dielectric layer.

### Claim 3 (depends on 1)

The assembly of claim 1, wherein the grounding layer is an electrically conducting deposited thin film.

### Claim 4 (depends on 1)

The assembly of claim 1, wherein the grounding layer is a deposited thin film comprising nickel, nickel alloy, titanium, aluminum, zirconium, titanium nitride, zirconium nitride, or conductive carbon.

### Claim 5 (depends on 1)

The assembly of claim 1, wherein the grounding layer has a thickness in a range from 100 nanometers to 10 micrometers and a width in a range from 10 nanometers to 100 micrometers.

### Claim 6 (depends on 1)

The assembly of claim 1, wherein the grounding layer extends without interruption around a complete perimeter of the assembly.

### Claim 7 (depends on 1)

The assembly of claim 1, wherein the grounding layer is electrically connected to the conductive field coating by a conductive ground path that extends from the conductive field coating and over an outer diameter surface of the dielectric layer, to connect to the grounding layer.

### Claim 8 (depends on 1)

The assembly of claim 1, further comprising a base below the insulator, that supports the insulator.

### Claim 9 (depends on 1)

The assembly of claim 1, further comprising embossments at an upper surface.

### Claim 10

A method comprising:
forming a grounding pin opening in a multi-layer structure including a dielectric layer, an electrode layer disposed below the dielectric layer, an insulator layer below the electrode layer, a polymeric bonding layer disposed below the dielectric layer and the electrode layer and above the insulator layer, and a grounding layer disposed above the polymeric bonding layer, below the dielectric layer, and electrically connected to the field coating, the grounding pin opening extending from a location of the insulator layer, through the polymeric bonding layer and to the grounding layer; and
inserting a grounding pin into the grounding pin opening and electrically connecting the grounding pin to the grounding layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the multi-layer structure comprises a conductive field coating above the dielectric layer, and the grounding layer is electrically connected to the conductive field coating.