# US 11,309,195 B2 · Heating element, substrate processing apparatus and method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,195 B2 - Document ID: US11309195B2 - Status: Granted - Kind: B2 - Application number: 16/549,362 - Filed: 2019-08-23 - Published: 2019-12-12 - Granted: 2022-04-19 - Earliest claimed: 2017-03-23 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Yoshihiko Yanagisawa; Yukitomo Hirochi - Web page: https://patentgrep.com/patent/US11309195B2 ## CPC - H10P 72/0436: {mainly by radiation} - H10P 72/3412: {Batch transfer of wafers} - H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers} - H10P 72/0602: {Temperature monitoring} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P 72/127: {characterised by the substrate support} - H10P 72/13: {Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements} - H10P 72/3302: {Mechanical parts of transfer devices} - H10P 72/3306: {Horizontal transfer of a single workpiece} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Described herein is a technique capable of processing a substrate uniformly using microwaves. According to one aspect of the technique of the present disclosure, there is provided a heating element used in a substrate processing apparatus configured to heat a substrate supported by a substrate retainer by microwaves and process the substrate, the heating element including a dielectric material of an annular shape capable of generating heat by the microwaves. An inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer without contacting the substrate. ## Claims ### Claim 1 A substrate retainer configured to support a heating element used in a substrate processing apparatus configured to heat a substrate supported by the substrate retainer by microwaves and process the substrate, the heating element comprising: a dielectric material of an annular shape capable of generating heat by the microwaves, wherein an inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer at a position above the substrate and without contacting the substrate. ### Claim 2 (depends on 1) The substrate retainer of claim 1, wherein the heating element further comprises: a first heating element supported by the substrate retainer at the position above the substrate: and a second heating element supported by the substrate retainer at a position below the substrate. ### Claim 3 (depends on 2) The substrate retainer of claim 2, wherein a plurality of substrates including the substrate are supported between the first heating element and the second heating element. ### Claim 4 (depends on 1) The substrate retainer of claim 1, wherein the heating element is supported by the substrate retainer at a height different from where the substrate is supported by the substrate retainer. ### Claim 5 (depends on 1) The substrate retainer of claim 1, wherein a width of the heating element is equal to or less than a half wavelength of the microwaves. ### Claim 6 (depends on 1) The substrate retainer of claim 1, wherein the heating element is supported by the substrate retainer such that a gap between the inner circumferential portion of the heating element and the outer circumferential portion of the substrate is equal to or less than a half wavelength of the microwaves. ### Claim 7 (depends on 1) The substrate retainer of claim 1, wherein the heating element further comprises notched portions provided in the inner circumferential portion of the heating element at positions corresponding to heating element supporting portions. ### Claim 8 (depends on 1) The substrate retainer of claim 1, wherein the heating element is supported by heating element supporting portions provided at a radially outer side of support columns. ### Claim 9 A substrate processing apparatus comprising: a substrate retainer capable of supporting a substrate; a process chamber where the substrate retainer is accommodated and the substrate is processed; a heater capable of heating the substrate by microwaves; and a heating element of an annular shape, made of a dielectric material capable of generating heat by the microwaves, wherein an inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer at a position above the substrate and without contacting the substrate. ### Claim 10 (depends on 9) The substrate processing apparatus of claim 9, wherein the substrate retainer comprises at least two support columns, and each of the at least two support columns comprises: an inner side surface; an outer side surface; substrate supporting portions capable of supporting the substrate and provided on the inner side surface; and heating element supporting portions capable of supporting the heating element and provided on the outer side surface. ### Claim 11 (depends on 10) The substrate processing apparatus of claim 10, wherein the substrate supporting portions and the heating element supporting portions are provided at different heights. ### Claim 12 (depends on 10) The substrate processing apparatus of claim 10, wherein the heating element comprises notched portions provided in the inner circumferential portion of the heating element at positions corresponding to the heating element supporting. ### Claim 13 (depends on 10) The substrate processing apparatus of claim 10, wherein the heating element is supported by the heating element supporting portions provided at a radially outer side of support columns. ### Claim 14 (depends on 9) The substrate processing apparatus of claim 9, wherein the heating element comprises: a first heating element supported by the substrate retainer at the position above the substrate; and a second heating element supported by the substrate retainer at a position below the substrate. ### Claim 15 (depends on 14) The substrate processing apparatus of claim 14, wherein a plurality of substrates including the substrate are supported between the first heating element and the second heating element. ### Claim 16 (depends on 9) The substrate processing apparatus of claim 9, wherein a width of the heating element is equal to or less than a half wavelength of the microwaves. ### Claim 17 (depends on 9) The substrate processing apparatus of claim 9, wherein the heating element is supported by the substrate retainer such that a gap between the inner circumferential portion of the heating element and the outer circumferential portion of the substrate is equal to or less than a half wavelength of the microwaves. ### Claim 18 A method of manufacturing a semiconductor device comprising: (a) loading a substrate into a process chamber of a substrate processing apparatus, the substrate processing apparatus comprising: a substrate retainer capable of supporting theft substrate; a process chamber where the substrate retainer is accommodated and the substrate is processed; a heater capable of heating the substrate by microwaves; and a heating element of an annular shape, made of a dielectric material capable of generating heat by the microwaves, wherein an inner circumferential portion of the heating element is located outer than an outer circumferential portion of the substrate, and the heating element is supported by the substrate retainer at a position above the substrate and without contacting the substrate; (b) processing the substrate by supplying the microwaves to heat the substrate and the heating element; and (c) unloading the substrate after (b).