# US 11,309,193 B2 · Semiconductor device and method of forming SIP module over film layer

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- Number: US 11,309,193 B2
- Document ID: US11309193B2
- Status: Granted
- Kind: B2
- Application number: 17/010,221
- Filed: 2020-09-02
- Published: 2020-12-24
- Granted: 2022-04-19
- Earliest claimed: 2017-03-15
- Assignees: STATS ChipPAC Pte. Ltd.
- Applicants: STATS ChipPAC Pte. Ltd.
- Inventors: OhHan Kim; KyungHwan Kim; WoonJae Beak; HunTeak Lee; InSang Yoon
- Web page: https://patentgrep.com/patent/US11309193B2

## CPC

- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00)
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 74/014: {using batch processing}
- H10W 74/10: characterised by their shape or disposition
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10W 72/01225: {in solid form, e.g. by using a powder or by stud bumping}
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/0198: {batch processes}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 90/00: Package configurations
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

## Claims

### Claim 1

A semiconductor device, comprising:
a penetrable film layer;
a semiconductor die or electrical component disposed over an attach area of the penetrable film layer with an electrically conductive portion of the semiconductor die or electrical component embedded within the penetrable film layer;
a conductive layer in contact with the penetrable film layer, wherein the conductive layer extends over a first portion of the penetrable film layer within the attach area of the penetrable film layer under the semiconductor die or electrical component to contact the electrically conductive portion of the semiconductor die or electrical component;
an encapsulant deposited over the penetrable film layer, conductive layer, and semiconductor die or electrical component; and
an electromagnetic shielding layer formed over the encapsulant.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the electromagnetic shielding layer contacts the conductive layer.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the conductive layer further extends over a second portion of the penetrable film layer outside the attach area of the penetrable film layer.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further including an insulating material disposed under the semiconductor die or electrical component.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the electrically conductive portion of the semiconductor die or electrical component embedded within the penetrable film layer includes a plurality of bumps.

### Claim 6

A semiconductor device, comprising:
a substrate;
an electrical component disposed over an attach area of the substrate with an electrically conductive portion of the electrical component embedded within the substrate;
a conductive layer formed in contact with the substrate, wherein the conductive layer extends over a first portion of the substrate within the attach area of the substrate under the electrical component to contact the electrically conductive portion of the electrical component;
an encapsulant deposited over the substrate and electrical component; and
an electromagnetic shielding layer formed over the encapsulant layer and extending to contact the conductive layer.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein the conductive layer further extends over a second portion of the substrate outside the attach area of the substrate.

### Claim 8 (depends on 6)

The semiconductor device of claim 6, further including an insulating material disposed under the electrical component.

### Claim 9 (depends on 6)

The semiconductor device of claim 6, wherein the electrical component includes an integrated passive device.

### Claim 10 (depends on 6)

The semiconductor device of claim 6, wherein the electrically conductive portion of the electrical component embedded within the penetrable substrate includes a plurality of bumps.

### Claim 11

A semiconductor device, comprising:
a penetrable substrate;
an electrical component disposed over an attach area of the penetrable substrate with a portion of the electrical component embedded within the penetrable substrate;
a conductive layer in contact with the penetrable substrate, wherein the conductive layer extends over a first portion of the substrate within the attach area of the penetrable substrate under the electrical component to contact the electrically conductive portion of the electrical component and further over a second portion of the penetrable substrate outside the attach area of the penetrable substrate;
an encapsulant deposited over the substrate and electrical component; and
an electromagnetic shielding layer formed over the encapsulant.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, wherein the electromagnetic shielding layer contacts the conductive layer.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, further including an insulating material disposed under the electrical component.

### Claim 14 (depends on 11)

The semiconductor device of claim 11, wherein the electrical component includes an integrated passive device.

### Claim 15 (depends on 11)

The semiconductor device of claim 11, wherein the portion of the electrical component embedded within the substrate includes a plurality of bumps.

### Claim 16

A semiconductor device, comprising:
a substrate;
an electrical component disposed over an attach area of the substrate with a portion of the electrical component embedded within the substrate;
a conductive layer in contact with the substrate, wherein the conductive layer extends over a first portion of the substrate within the attach area of the substrate under the electrical component to contact the electrically conductive portion of the electrical component and further over a second portion of the substrate outside the attach area of the substrate;
an encapsulant deposited over the substrate and electrical component; and
an electromagnetic shielding layer over the encapsulant.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein the electromagnetic shielding layer contacts the conductive layer.

### Claim 18 (depends on 16)

The semiconductor device of claim 16, further including an insulating material disposing under the electrical component.