# US 11,309,179 B2 · Method for processing product layer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,179 B2 - Document ID: US11309179B2 - Status: Granted - Kind: B2 - Application number: 16/924,976 - Filed: 2020-07-09 - Published: 2021-01-14 - Granted: 2022-04-19 - Earliest claimed: 2019-07-10 - Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Inventors: Hui Qu - Web page: https://patentgrep.com/patent/US11309179B2 ## CPC - H10P 50/283: {by chemical means} - H10P 70/20: {Cleaning during device manufacture} - H10P 14/6528: {In-situ cleaning after layer formation, e.g. removing process residues} - H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC} - H10P 70/23: {during, before or after processing of insulating materials} - H10P 72/0418: {for etching} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for processing a product layer includes providing a dielectric layer over a substrate, etching to remove a portion of the dielectric layer, forming a product layer over the etched dielectric layer, and removing the product layer by providing a dissolving solution and using the dissolving solution to rinse or soak the product layer to dissolve the product layer. ## Claims ### Claim 1 A method for processing a product layer, comprising: providing a dielectric layer over a substrate, wherein the substrate includes a plurality of fins on a base substrate, a hard mask layer is formed on the plurality of fins, an isolation layer is formed between the hard mask layer and the plurality of fins to improve bonding strength between the hard mask layer and the plurality of fins, and the dielectric layer has a top surface coplanar with a top surface of the hard mask layer; etching, by a drying etching process, to remove a portion of the dielectric layer and forming a product layer by depositing a product from the drying etching process over the etched dielectric layer, wherein a top surface of the product layer is lower than the top surface of the hard mask layer and higher than a top surface of the isolation layer; and removing the product layer by providing a dissolving solution and using the dissolving solution to rinse or soak the product layer to dissolve the product layer. ### Claim 2 (depends on 1) The method according to claim 1, wherein the dissolving solution includes a mixed solution containing aqueous ammonia (NH3) and hydrogen peroxide (H2O2). ### Claim 3 (depends on 2) The method according to claim 2, wherein a molar ratio of the ammonia in water solvent is 0.1% to 2% and a molar ratio of the hydrogen peroxide in the water solvent is 0.2% to 5%. ### Claim 4 (depends on 1) The method according to claim 1, wherein the dissolving solution is aqueous ammonia. ### Claim 5 (depends on 4) The method according to claim 4, wherein a molar ratio of the ammonia in water solvent is 0.1% to 2%. ### Claim 6 (depends on 1) The method according to claim 1, wherein the dissolving solution includes a carbonic acid solution. ### Claim 7 (depends on 6) The method according to claim 6, wherein a concentration of the carbonic acid solution is 0.01 mol/L to 0.04 mol/L. ### Claim 8 (depends on 1) The method according to claim 1, wherein a duration for rinsing or soaking the product layer in the dissolving solution is 40 seconds 120 seconds. ### Claim 9 (depends on 1) The method according to claim 1, wherein a material of the dielectric layer includes silicon oxide. ### Claim 10 (depends on 1) The method according to claim 1, wherein a processing gas used in the dry etching process includes hydrogen fluoride (HF) and ammonia (NH3). ### Claim 11 (depends on 10) The method according to claim 10, wherein the processing gas used in the dry etching process further includes nitrogen or argon. ### Claim 12 (depends on 11) The method according to claim 11, wherein a flow rate of the nitrogen is 400 sccm 1500 sccm, when the nitrogen is further included in the processing gas. ### Claim 13 (depends on 1) The method according to claim 1, wherein a chamber pressure of the dry etching process is 20 mTorr-2000 mTorr. ### Claim 14 (depends on 1) The method according to claim 1, wherein after removing the product layer, the method further includes providing a cleaning solution, and using the cleaning solution to rinse or soak the dielectric layer. ### Claim 15 (depends on 14) The method according to claim 14, wherein the cleaning solution includes isopropyl alcohol or acetone. ### Claim 16 (depends on 14) The method according to claim 14, further including rinsing or soaking the dielectric layer by using the cleaning solution for 15 seconds-40 seconds. ### Claim 17 (depends on 1) The method according to claim 1, wherein a material of the product layer includes ammonium fluorosilicate. ### Claim 18 (depends on 1) The method according to claim 1, wherein after removing the product layer, a remaining portion of the dielectric layer has a top surface higher than the top surface of the isolation layer.