# US 11,309,167 B2 · Active gas generation apparatus and deposition processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,167 B2 - Document ID: US11309167B2 - Status: Granted - Kind: B2 - Application number: 17/050,853 - Filed: 2018-06-25 - Published: 2021-07-29 - Granted: 2022-04-19 - Earliest claimed: 2018-06-25 - Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation - Applicants: Toshiba Mitsubishi-Electric Industrial Systems Corporation - Inventors: Kensuke Watanabe; Shinichi Nishimura; Ren Arita - Web page: https://patentgrep.com/patent/US11309167B2 ## CPC - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species - C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber - C23C 16/45565: {Shower nozzles} - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - C23C 16/513: using plasma jets - H01J 37/32348: {Dielectric barrier discharge} - H01J 37/3244: {Gas supply means} - H01J 2237/332: Coating - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract In the present invention, a gas passing groove, a high-voltage electrode groove and a ground electrode groove formed in an electrode unit base are each spiral in plan view. A high-voltage electrode is embedded in the high-voltage electrode grove, and a ground electrode is embedded in the ground electrode groove. The high-voltage electrode and the ground electrode are arranged on sides of opposite side surfaces of the gas passing groove in the electrode unit base to oppose each other with a portion of the electrode unit base and the gas passing groove therebetween, and are spiral in plan view along with the gas passing groove. ## Claims ### Claim 1 An active gas generation apparatus generating active gas by activating source gas supplied to a discharge space in which a dielectric barrier discharge is generated, said active gas generation apparatus comprising: an electrode unit including a first electrode and a second electrode; and an AC power source supplying an AC voltage to said electrode unit, wherein said electrode unit includes: an electrode body part made of a dielectric; said first electrode and said second electrode located within said electrode body part, and each having conductivity; a gas inlet located in said electrode body part, and receiving said source gas externally supplied; and a gas internal flow path located within said electrode body part, and allowing said source gas having entered through said gas inlet to pass therethrough, said gas internal flow path being spiral in plan view, said first electrode and said second electrode are arranged on sides of opposite side surfaces of said gas internal flow path to oppose each other with a portion of said electrode body part and said gas internal flow path therebetween, and are spiral in plan view along with said gas internal flow path, a region in said gas internal flow path between said first electrode and said second electrode being said discharge space, said dielectric barrier discharge being generated in said discharge space upon application of said AC voltage from said AC power source, said electrode unit further includes a plurality of gas ejection ports located below said discharge space to communicate with said gas internal flow path, and said active gas generated by activating said source gas supplied to said discharge space is jetted through said plurality of gas ejection ports. ### Claim 2 (depends on 1) The active gas generation apparatus according to claim 1, wherein said first electrode and said second electrode are not exposed from said electrode body part. ### Claim 3 (depends on 1) The active gas generation apparatus according to claim 1, wherein said second electrode is set to ground level, and said AC voltage is applied to said first electrode, and said first electrode and said second electrode are arranged so that said second electrode is located on an outermost periphery of said electrode body part in plan view. ### Claim 4 (depends on 1) The active gas generation apparatus according to claim 1, wherein said electrode body part includes: an electrode unit base; and an electrode unit lid located on a front surface of said electrode unit base, said electrode unit base has a first electrode groove and a second electrode groove each having the same formation depth from said front surface, said gas internal flow path is groove-shaped to have a predetermined formation depth from said front surface of said electrode unit base, said first electrode and said second electrode are respectively embedded in said first electrode groove and said second electrode groove, and said first electrode has a formation height set to be lower than a formation height of said second electrode. ### Claim 5 (depends on 1) The active gas generation apparatus according to claim 1, wherein an external region which is located immediately below said plurality of gas ejection ports, and to which said active gas is jetted through said plurality of gas ejection ports is defined as an apparatus downstream region, and said plurality of gas ejection ports each has relatively small dimensions so that pressure in said gas internal flow path is higher than pressure in said apparatus downstream region. ### Claim 6 (depends on 5) The active gas generation apparatus according to claim 5, wherein said plurality of gas ejection ports are discretely arranged to be spiral in plan view. ### Claim 7 (depends on 1) The active gas generation apparatus according to claim 1, further comprising a cooling fin made of a dielectric, and sealed to said electrode unit. ### Claim 8 (depends on 1) The active gas generation apparatus according to claim 1, wherein a constituent material of said electrode body part is at least one of alumina, quartz, silicon nitride, aluminum nitride, and boron nitride. ### Claim 9 (depends on 1) The active gas generation apparatus according to claim 1, wherein said source gas is gas containing at least one of nitrogen, oxygen, fluorine, and hydrogen. ### Claim 10 (depends on 6) A deposition processing apparatus comprising: said active gas generation apparatus according to claim 6; and a deposition processing chamber located in a region including said apparatus downstream region, and having a deposition processing space to directly receive said active gas from said plurality of gas ejection ports. ### Claim 11 (depends on 10) The deposition processing apparatus according to claim 10, wherein said pressure in said gas internal flow path is set to 10 kPa to atmospheric pressure, and pressure in said deposition processing space is set to less than said pressure in said gas internal flow path.