# US 11,309,162 B2 · TEM-based metrology method and system

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- Number: US 11,309,162 B2
- Document ID: US11309162B2
- Status: Granted
- Kind: B2
- Application number: 17/170,938
- Filed: 2021-02-09
- Published: 2021-07-15
- Granted: 2022-04-19
- Earliest claimed: 2017-02-27
- Assignees: Nova Ltd.
- Applicants: Nova Ltd.
- Inventors: Vladimir Machavariani; Michael Shifrin; Daniel Kandel; Victor Kucherov; Igor Ziselman; Ronen Urenski; Matthew Sendelbach
- Web page: https://patentgrep.com/patent/US11309162B2

## CPC

- H01J 37/26: Electron or ion microscopes; Electron or ion diffraction tubes
- G06T 7/0006: {using a design-rule based approach}
- G06T 7/0008: {checking presence/absence}
- G06T 7/251: {involving models}
- G06T 7/60: Analysis of geometric attributes
- G06T 15/205: {Image-based rendering}
- H01J 37/222: {Image processing arrangements associated with the tube}
- G06T 2207/10056: Microscopic image
- G06T 2207/10061: from scanning electron microscope
- G06T 2207/20076: Probabilistic image processing
- G06T 2207/30148: Semiconductor; IC; Wafer
- H01J 2237/221: Image processing
- H01J 2237/24592: Inspection and quality control of devices
- H01J 2237/2802: Transmission microscopes
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- G06T: IMAGE DATA PROCESSING OR GENERATION, IN GENERAL

## Abstract

A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

## Claims

### Claim 1

A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method comprising:
performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure;
determining a measured Lamellae position of at least one measured TEM image in said TEM image data from a best fit condition between the measured and simulated data; and
generating output data indicative of said simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

### Claim 2 (depends on 1)

A metrology method according to claim 1, further comprising:
providing at least one three-dimensional model of the patterned structure, the three-dimensional model comprising a parametrized three-dimensional geometrical model of the structure;
analyzing said three-dimensional model and data indicative of a TEM measurement mode comprising at least Lamellae geometry data; and
generating said simulated TEM image data.

### Claim 3 (depends on 1)

A metrology method according to claim 1, further comprising determining the one or more parameters of the structure from the best fit condition.

### Claim 4 (depends on 3)

A metrology method according to claim 3, further comprising using said one or more of the determined parameters of the structure to optimize a data interpretation model for interpreting measured data produced using a metrology method of a type different from TEM.

### Claim 5 (depends on 1)

A metrology method according to claim 1, wherein said one or more parameters of the structure to be determined comprise dimensional parameters, comprising one or more of the following: Critical Dimensions (CD) of the pattern features, thickness of one or more layers in the structure, Side Wall Angle (SWA).