# US 11,309,032 B2 · Operating method of memory system including memory controller and nonvolatile memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,309,032 B2 - Document ID: US11309032B2 - Status: Granted - Kind: B2 - Application number: 17/077,200 - Filed: 2020-10-22 - Published: 2021-05-27 - Granted: 2022-04-19 - Earliest claimed: 2019-11-26 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Joonsuc Jang - Web page: https://patentgrep.com/patent/US11309032B2 ## CPC - G06F 12/0246: {in block erasable memory, e.g. flash memory} - G11C 16/10: Programming or data input circuits - G06F 3/0604: {Improving or facilitating administration, e.g. storage management} - G06F 3/0619: {in relation to data integrity, e.g. data losses, bit errors} - G06F 3/0644: {Management of space entities, e.g. partitions, extents, pools} - G06F 3/0647: {Migration mechanisms} - G06F 3/0659: {Command handling arrangements, e.g. command buffers, queues, command scheduling} - G06F 3/0679: {Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]} - G06F 11/1068: {in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence)} - G11C 11/56: using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C 16/3459: {Circuits or methods to verify correct programming of nonvolatile memory cells} - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract An operating method of a memory system includes preprogramming multi-page data of a memory controller to a nonvolatile memory device, generating a state group code based on multi-bit data of the multi-page data, and each state group data of the state group code having less number of bits than corresponding multi-bit data, detecting sudden power-off occurring after the preprogramming, backing up, in response to the detecting of the sudden power-off occurring, the state group code to the nonvolatile memory device, recovering, after power is recovered from the sudden power-off, the multi-page data from the nonvolatile memory device, based on the state group code, reprogramming the multi-page data to the nonvolatile memory device, and reprogramming, in response to the detecting of the sudden power-off not occurring, the multi-page data of the memory controller to the nonvolatile memory device. ## Claims ### Claim 1 An operating method of a memory system including a memory controller and a nonvolatile memory device, the operating method comprising: preprogramming multi-page data of the memory controller to a plurality of memory cells connected to a first word line of the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is preprogrammed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of preprogrammed states; generating a state group code based on the plurality of multi-bit data of the multi-page data, wherein the state group code includes a plurality of state group data, and wherein each of the plurality of state group data has less number of bits than a corresponding one of the plurality of multi-bit data of the multi-page data; backing up the state group code to the nonvolatile memory device when sudden power-off occurs after the memory cells are preprogrammed; recovering, after power is recovered from the sudden power-off, the multi-page data by reading the plurality of memory cells, which are preprogrammed, based on the state group code; reprogramming the multi-page data, recovered from the plurality of memory cells which are preprogrammed, to the plurality of memory cells which are preprogrammed; and reprogramming the multi-page data of the memory controller to the plurality of memory cells which are preprogrammed when the sudden power-off does not occur after the memory cells are preprogrammed. ### Claim 2 (depends on 1) The operating method of claim 1, wherein the plurality of preprogrammed states are grouped into N state groups, wherein each of the N state groups has M preprogrammed states of the plurality of preprogrammed states, M having a number amounting to a number of the plurality of preprogrammed states divided by N, M and N being integer numbers, and wherein each of the plurality of state group data represents a corresponding one of the N state groups. ### Claim 3 (depends on 2) The operating method of claim 2, wherein the reading of the multi-page data from the plurality of memory cells includes: setting a read operation of the nonvolatile memory device to a recovery read mode; and applying first read voltages to the first word line connected to the plurality of memory cells, which are preprogrammed, in the recovery read mode, the first read voltages being determined based on each of the plurality of state group data. ### Claim 4 (depends on 3) The operating method of claim 3, wherein read voltage levels of the first read voltages applied to the first word line to read the multi-page data in the recovery read mode are different from read voltage levels of second read voltages applied to the first word line to read the multi-page data in a normal read mode. ### Claim 5 (depends on 3) The operating method of claim 3, wherein the first read voltages have first read voltage levels corresponding to a first state group data among the plurality of state group data and second read voltage levels, different from the first read voltage levels, corresponding to a second state group data among the plurality of state group data. ### Claim 6 (depends on 3) The operating method of claim 3, wherein a number of read voltage levels applied to the first word line according to a read command in the recovery read mode is greater than a number of read voltage levels applied to the first word line according to a read command in a normal read mode. ### Claim 7 (depends on 3) The operating method of claim 3, wherein voltage levels of the first read voltages applied to the first word line are regulated according to whether a memory cell connected to a second word line which is adjacent to the first word line is in a preprogrammed state. ### Claim 8 (depends on 1) The operating method of claim 1, wherein a program verify voltage for the reprogramming is higher than a program verify voltage for the preprogramming. ### Claim 9 (depends on 1) The operating method of claim 1, wherein the state group code is generated by the nonvolatile memory device according to a state group code generation command from the memory controller. ### Claim 10 (depends on 1) The operating method of claim 1, wherein the backing up of the state group code to the nonvolatile memory device is performed by programming the state group code in a single-level cell (SLC) mode to the nonvolatile memory device. ### Claim 11 (depends on 1) The operating method of claim 1, wherein the reprogramming of the multi-page data includes: correcting an error in the multi-page data read from the plurality of memory cells which are preprogrammed; and reprogramming the corrected multi-page data to the plurality of memory cells which are preprogrammed. ### Claim 12 An operating method of a memory system including a memory controller and a nonvolatile memory device, the operating method comprising: preprogramming multi-page data of the memory controller to a plurality of memory cells connected to a word line of the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is preprogrammed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of preprogrammed states; generating a state group code based on the plurality of multi-bit data of the multi-page data, wherein the state group code includes a plurality of state group data, and wherein each of the plurality of state group data has less number of bits than a corresponding one of the plurality of multi-bit data of the multi-page data; backing up the state group code to the nonvolatile memory device; recovering, after power is recovered from the sudden power-off occurred after the state group code is backed up, the multi-page data by reading the plurality of memory cells, which are preprogrammed, based on the state group code; reprogramming the multi-page data, recovered from the plurality of memory cells which are preprogrammed, to the plurality of memory cells; and reprogramming the multi-page data of the memory controller to the plurality of memory cells which are preprogrammed when the sudden power-off does not occur after the state group code is backed up. ### Claim 13 (depends on 12) The operating method of claim 12, wherein the plurality of preprogrammed states are grouped into N state groups, wherein each of the N state groups has M preprogrammed states, non-overlapped each other, of the plurality of preprogrammed states, M having a number amounting to a number of the plurality of preprogrammed states divided by N, M and N being integer numbers, and wherein each of the plurality of state group data represents one of the N state groups. ### Claim 14 (depends on 13) The operating method of claim 13, wherein the reading of the multi-page data from the plurality of memory cells includes: changing a read operation of the nonvolatile memory device from a normal read mode to a recovery read mode; and applying first read voltages to the word line connected to the plurality of memory cells, which are preprogrammed, in the recovery read mode, the first read voltages being determined based on each of the plurality of state group data. ### Claim 15 (depends on 14) The operating method of claim 14, wherein read voltage levels of the first read voltages applied to the word line to read the multi-page data in the recovery read mode are different from read voltage levels of second read voltages applied to the word line to read the multi-page data in the normal read mode. ### Claim 16 (depends on 14) The operating method of claim 14, wherein the first read voltages have first read voltage levels corresponding to a first state group data among the plurality of state group data and second read voltage levels, different from the first read voltage levels, corresponding to a second state group data among the plurality of state group data. ### Claim 17 (depends on 14) The operating method of claim 14, wherein a number of read voltage levels applied to the word line according to a read command in the recovery read mode is greater than a number of read voltage levels applied to the word line according to a read command in the normal read mode. ### Claim 18 An operating method of a memory system including a memory controller and a nonvolatile memory device, the nonvolatile memory device including a memory cell region including a first metal pad, and a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad, the operating method comprising: preprogramming multi-page data of the memory controller to a plurality of memory cells connected to a first word line of the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is preprogrammed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of preprogrammed states; generating a state group code based on the plurality of multi-bit data of the multi-page data, wherein the state group code includes a plurality of state group data, and wherein each of the plurality of state group data has less number of bits than a corresponding one of the plurality of multi-bit data of the multi-page data; backing up the state group code to the nonvolatile memory device when sudden power-off occurs after the memory cells are preprogrammed; recovering, after power is recovered from the sudden power-off, the multi-page data by reading the plurality of memory cells, which are preprogrammed, based on the state group code; reprogramming the multi-page data, recovered from the plurality of memory cells which are preprogrammed, to the plurality of memory cells which are preprogrammed; and reprogramming the multi-page data of the memory controller to the plurality of memory cells which are preprogrammed when the sudden power-off does not occur after the memory cells are preprogrammed. ### Claim 19 (depends on 18) The operating method of claim 18, wherein the first metal pad and the second metal pad are formed of copper. ### Claim 20 (depends on 18) The operating method of claim 18, wherein the first metal pad and the second metal pad are connected to each other in a bonding manner.