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US 11,308,987 B2Granted
Optical memory devices using a silicon wire grid polarizer and methods of making and using
AssigneeWostec, Inc.
InventorsValery Konstantinovich Smirnov, Dmitry Stanislavovich Kibalov
Life of this patent
Estimating the term…
Abstract
Long term optical memory includes a storage medium composed from an array of silicon nanoridges positioned onto the fused silica glass. The array has first and second polarization contrast corresponding to different phase of silicon. The first polarization contrast results from amorphous phase of silicon and the second polarization contrast results from crystalline phase of silicon. The first and second polarization states are spatially distributed over plurality of localized data areas of the storage medium.
Claims20
An optical memory, comprising:
- a substrate;
- and
- a storage medium disposed on the substrate and comprising an array of silicon nanoridges, wherein the silicon nanoridges are substantially oriented and are configured for transformation between a first state and a second state, wherein the first and second states have different responses to polarized light of at least one wavelength.
Dependencies are inferred from the claim text.