# US 11,308,910 B2 · Display device comprising a transistor with LDD regions

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- Number: US 11,308,910 B2
- Document ID: US11308910B2
- Status: Granted
- Kind: B2
- Application number: 16/850,401
- Filed: 2020-04-16
- Published: 2020-10-01
- Granted: 2022-04-19
- Earliest claimed: 2013-07-10
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Hiroyuki Miyake; Kouhei Toyotaka; Shunpei Yamazaki
- Web page: https://patentgrep.com/patent/US11308910B2

## CPC

- G09G 3/3677: {suitable for active matrices only}
- G02F 1/1333: Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence)
- G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making}
- G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- G11C 19/28: using semiconductor elements (G11C19/14, G11C19/36 take precedence)
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/13685: {Top gates}
- G09G 2300/0809: Several active elements per pixel in active matrix panels
- G09G 2310/0286: Details of a shift registers arranged for use in a driving circuit
- G09G 2310/0291: Details of output amplifiers or buffers arranged for use in a driving circuit
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

## Claims

### Claim 1

A display device comprising:
a glass substrate;
a first insulating layer comprising silicon oxide over the glass substrate;
a second insulating layer comprising silicon nitride over the glass substrate;
a semiconductor layer comprising polysilicon over the first insulating layer and the second insulating layer;
a third insulating layer, provided over the semiconductor layer, comprising silicon oxide and functioning as a first gate insulating layer;
a fourth insulating layer, provided over the third insulating layer, comprising silicon nitride and functioning as a second gate insulating layer;
a gate electrode comprising molybdenum over the fourth insulating layer;
an insulating interlayer film comprising any one of silicon oxide and silicon nitride over the gate electrode;
a first conductive film provided in an opening of the insulating interlayer film, the first conductive film having a stacked-layer structure comprising aluminum and titanium;
a fifth insulating film comprising a resin over and in contact with side surfaces and a top surface of the first conductive film and over and in contact with the insulating interlayer film;
a second conductive film functioning as a pixel electrode over and electrically connected to the first conductive film through an opening provided in the fifth insulating film; and
a light-blocking film overlapping the semiconductor layer, the gate electrode, and the pixel electrode,
wherein the light-blocking film comprises a metal,
wherein a bottom surface of the fifth insulating film is provided below a top surface of the gate electrode,
wherein the second conductive film comprises a region overlapping the semiconductor layer,
wherein the gate electrode comprises a region not overlapping with the second conductive film,
wherein the second conductive film comprises indium tin oxide,
wherein the gate electrode overlaps with a channel region of the semiconductor layer, and
wherein the gate electrode has a tapered shape.

### Claim 2

A display device comprising:
a glass substrate;
a first insulating layer comprising silicon oxide over the glass substrate;
a second insulating layer comprising silicon nitride over the glass substrate;
a semiconductor layer comprising polysilicon over the first insulating layer and the second insulating layer;
a third insulating layer, provided over the semiconductor layer, comprising silicon oxide and functioning as a first gate insulating layer;
a gate electrode comprising molybdenum over the third insulating layer;
an insulating interlayer film comprising any one of silicon oxide and silicon nitride over the gate electrode;
a first conductive film provided in an opening of the insulating interlayer film and the third insulating layer, the first conductive film having a stacked-layer structure comprising aluminum and titanium;
an organic insulating film over and in contact with side surfaces and a top surface of the first conductive film and over and in contact with the insulating interlayer film;
a second conductive film functioning as a pixel electrode over and electrically connected to the first conductive film through an opening provided in the fifth insulating film; and
a light-blocking film overlapping the semiconductor layer, the gate electrode, and the pixel electrode,
wherein the light-blocking film comprises a metal,
wherein a bottom surface of the organic insulating film is provided below a top surface of the gate electrode,
wherein the second conductive film comprises a region overlapping the semiconductor layer,
wherein the gate electrode comprises a region not overlapping with the second conductive film,
wherein the second conductive film comprises indium tin oxide,
wherein the gate electrode overlaps with a channel region of the semiconductor layer, and
wherein the gate electrode has a tapered shape.

### Claim 3 (depends on 1)

The display device according to claim 1, further comprising:
a liquid crystal display element; and
an insulating film over the second conductive film,
wherein a region in the display device exists in which the glass substrate overlaps with the first insulating film, the second insulating film, the semiconductor layer, the first gate insulating layer, the insulating interlayer film, and the first conductive film without a layer comprising a metal provided therebetween.

### Claim 4 (depends on 2)

The display device according to claim 2, further comprising:
a liquid crystal display element; and
an insulating film over the second conductive film,
wherein a region in the display device exists in which the glass substrate overlaps with the first insulating film, the second insulating film, the semiconductor layer, the first gate insulating layer, the insulating interlayer film, and the first conductive film without a layer comprising a metal provided therebetween.

### Claim 5 (depends on 1)

The display device according to claim 1, further comprising:
a liquid crystal display element;
an alignment film comprising a resin over the second conductive film; and
a third conductive film comprising indium tin oxide over the second conductive film and the fifth insulating layer.

### Claim 6 (depends on 2)

The display device according to claim 2, further comprising:
a liquid crystal display element;
an alignment film comprising a resin over the second conductive film; and
a third conductive film comprising indium tin oxide over the second conductive film and the organic insulating film.

### Claim 7 (depends on 3)

The display device according to claim 3, further comprising:
a pair of LDD regions in the semiconductor layer.

### Claim 8 (depends on 4)

The display device according to claim 4, further comprising:
a pair of LDD regions in the semiconductor layer.