# US 11,308,254 B2 · Method and system for reducing layout distortion due to exposure non-uniformity > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,308,254 B2 - Document ID: US11308254B2 - Status: Granted - Kind: B2 - Application number: 16/937,398 - Filed: 2020-07-23 - Published: 2021-03-04 - Granted: 2022-04-19 - Earliest claimed: 2019-08-30 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Ltd. - Inventors: Chi-Ta Lu; Chia-Hui Liao; Yihung Lin; Chi-Ming Tsai - Web page: https://patentgrep.com/patent/US11308254B2 ## CPC - G06F 30/392: Floor-planning or layout, e.g. partitioning or placement - G03F 1/70: Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging - G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) - G06F 2111/20: Configuration CAD, e.g. designing by assembling or positioning modules selected from libraries of predesigned modules - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method, a non-transitory computer-readable storage medium and a system for adjusting a design layout are provided. The method includes: receiving a design layout including a feature in a peripheral region of the design layout; determining a first compensation value associated with the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout by modifying a shape of the feature according to the compensation value. ## Claims ### Claim 1 A method, comprising: receiving a design layout comprising a feature in a peripheral region of the design layout; performing model-based optical proximity correction on the design layout by dissecting edges of the feature by dissection lines; determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; adjusting the design layout by modifying a shape of the feature according to the compensation values; and manufacturing a mask according to the design layout, wherein the modifying of the shape of the feature according to the compensation values comprises: partitioning the peripheral region into compensation zones, wherein the feature comprises portions disposed within the respective compensation zones; assigning the compensation values to the respective compensation zones; and reducing line widths of the portions of the feature according to the compensation values associated with the respective compensation zones. ### Claim 2 (depends on 1) The method according to claim 1, further comprising manufacturing a semiconductor device according to the mask. ### Claim 3 (depends on 1) The method according to claim 1, wherein the determining of the compensation values is performed further according to a reflectivity of the pellicle assembly disposed over the mask. ### Claim 4 (depends on 1) The method according to claim 1, further comprising performing a ruled-based optical proximity correction on the design layout. ### Claim 5 (depends on 1) The method according to claim 1, wherein each of the compensation values is represented as a ratio, and wherein the reducing of the line widths of the portions of the feature comprises reducing the line widths by the ratio of each of the line widths. ### Claim 6 (depends on 1) The method according to claim 1, wherein the modifying of the shape of the feature according to the compensation values comprises causing the feature partially compensated. ### Claim 7 (depends on 1) The method according to claim 1, wherein each of the compensation zones has a polygonal shape. ### Claim 8 (depends on 1) The method according to claim 1, wherein the compensation values are determined according to a distance between the feature and a side of the design layout. ### Claim 9 The method according to 1, wherein assigning compensation values to the respective compensation zones comprises assigning a first compensation value associated with a first compensation zone and a second compensation value associated with a second compensation zone, the second compensation value being less than the first compensation value and the first compensation zone being closer to a side of the design layout than the second compensation zone. ### Claim 10 (depends on 1) The method according to claim 1, wherein a side of each of the portions is defined by two adjacent dissection lines, and the side is parallel to and offset from a boundary of each of the compensation zones. ### Claim 11 A non-transitory computer-readable storage medium, comprising instructions which, when executed by a processor, perform the steps of: receiving a design layout comprising a feature in a peripheral region of the design layout; performing model-based optical proximity correction on the design layout; determining compensation values associated with the peripheral region according to a reflectivity of a pellicle assembly, the pellicle assembly being disposed over a mask; adjusting the design layout by modifying a shape of the feature according to the compensation values through the steps of: partitioning the peripheral region into compensation zones, wherein the feature comprises portions disposed within the respective compensation zones; assigning the compensation values to the respective compensation zones; and reducing line widths of the portions of the feature according to the compensation values associated with the respective compensation zones; and causing the mask to be manufactured according to the design layout. ### Claim 12 (depends on 11) The non-transitory computer-readable storage medium according to claim 11, wherein the partitioning of the peripheral region comprises partitioning the peripheral region into a corner region and a side region, wherein the compensation zones comprise a first portion and a second portion disposed in the corner region and the side region, respectively, wherein the assigning of the compensation values comprises assigning a first compensation value and a second compensation value to the corner region and the side region, respectively, wherein the reducing of the line widths of the portions of the feature comprises reducing line widths of both the first portion and the second portion according to the first and second compensation values, respectively. ### Claim 13 (depends on 12) The non-transitory computer-readable storage medium according to claim 12, wherein the peripheral region comprises a first compensation zone having an L shape. ### Claim 14 (depends on 12) The non-transitory computer-readable storage medium according to claim 12, wherein the instructions further perform the step of performing a retargeting operation subsequent to adjusting the design layout. ### Claim 15 (depends on 11) The non-transitory computer-readable storage medium according to claim 11, wherein the instructions further perform the step of: adding a sub-resolution feature to the design layout; and preventing the sub-resolution feature from being subjected to the step of adjusting the design layout. ### Claim 16 A system, comprising a processor and one or more programs including instructions which, when executed by the processor, cause the system to: receive a design layout comprising a feature in a peripheral region of the design layout; performing model-based optical proximity correction on the design layout; determine compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; adjust the design layout by modifying a shape of the feature according to the compensation values through the steps of: partitioning the peripheral region into compensation zones, wherein the feature comprises portions disposed within the respective compensation zones; assigning the compensation values to the respective compensation zones; and reducing line widths of the portions of the feature according to the compensation values associated with the respective compensation zones; and perform a lithography operation that transfers the shape of the feature to the workpiece. ### Claim 17 (depends on 16) The system according to claim 16, wherein the instructions, when executed by the processor, further cause the system to add a sub-resolution feature to the design layout and modify a shape of the sub-resolution feature according to the compensation values. ### Claim 18 (depends on 16) The system according to claim 16, wherein the compensation values is determined according to a distance between the feature and a vertex of the design layout. ### Claim 19 (depends on 16) The system according to claim 16, further comprising manufacturing a mask according to the design layout, wherein the lithography operation is performed according to the mask. ### Claim 20 (depends on 16) The system according to claim 16, wherein the partitioning of the peripheral region into the compensation zones comprises dissecting edges of the feature into edge segments, wherein the portions are determined according to the edge segments.