# US 11,307,502 B2 · Assistant pattern configuration method, mask and forming method thereof, and related device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,307,502 B2 - Document ID: US11307502B2 - Status: Granted - Kind: B2 - Application number: 16/952,245 - Filed: 2020-11-19 - Published: 2021-09-02 - Granted: 2022-04-19 - Earliest claimed: 2020-02-28 - Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation - Inventors: Feng Bai; Wanjuan Zhang; Yibin Huang; Yao Xu; Fan Zhang - Web page: https://patentgrep.com/patent/US11307502B2 ## CPC - G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes - G03F 7/70641: {Focus} - G03F 7/70433: {Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors} - G03F 7/70625: {Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness} - H10P 76/2041: {Photolithographic processes} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices. One form of a configuration method includes: providing a main pattern having an edge extending along a first direction, where a second direction is perpendicular to the first direction, the main pattern having a first optimal focal plane in the first direction and a second optimal focal plane in the second direction when exposed, and where there is an optimal focal plane offset between the first optimal focal plane and the second optimal focal plane; providing an initial assistant pattern around the main pattern; extracting a configuration parameter of the initial assistant pattern, the configuration parameter corresponding to the optimal focal plane offset; obtaining configuration information corresponding to a preset optimal focal plane offset based on an adjustment of the configuration parameter; and configuring an assistant pattern around the main pattern according to the configuration information. Embodiments and implementations of the present disclosure can improve lithographic quality. ## Claims ### Claim 1 An assistant pattern configuration method, comprising: providing a main pattern having an edge extending along a first direction, where a second direction is perpendicular to the first direction, the main pattern having a first focal plane in the first direction and a second focal plane in the second direction when exposed, and where there is a focal plane offset between the first focal plane and the second focal plane; providing an initial assistant pattern around the main pattern; extracting a configuration parameter of the initial assistant pattern, where the configuration parameter corresponds to the focal plane offset; obtaining configuration information corresponding to a preset focal plane offset based on an adjustment of the configuration parameter; and configuring an assistant pattern around the main pattern according to the configuration information. ### Claim 2 (depends on 1) The configuration method according to claim 1, wherein the configuration parameter comprises at least one of a size of the initial assistant pattern or a distance between the initial assistant pattern and the main pattern. ### Claim 3 (depends on 1) The configuration method according to claim 1, wherein the initial assistant pattern comprises a first initial assistant pattern and a second initial assistant pattern, where an aspect ratio of the second initial assistant pattern is different from an aspect ratio of the first initial assistant pattern. ### Claim 4 (depends on 3) The configuration method according to claim 3, wherein the configuration parameter comprises at least one of the aspect ratio of the first initial assistant pattern, the aspect ratio of the second initial assistant pattern, or a ratio of a quantity of first initial assistant patterns to a quantity of second initial assistant patterns. ### Claim 5 (depends on 3) The configuration method according to claim 3, wherein the configuration parameter comprises at least one of: a width of the first initial assistant pattern, a length of the first initial assistant pattern, a spacing between adjacent first initial assistant patterns, a distance between the first initial assistant pattern and the main pattern, a width of the second initial assistant pattern, a length of the second initial assistant pattern, a distance between the second initial assistant pattern and the main pattern, a spacing between adjacent second initial assistant patterns, or a ratio of a quantity of first initial assistant patterns to a quantity of second initial assistant patterns. ### Claim 6 (depends on 3) The configuration method according to claim 3, wherein the first initial assistant pattern is a square, and the second initial assistant pattern is a rectangle. ### Claim 7 (depends on 3) The configuration method according to claim 3, wherein: the step of providing an initial assistant pattern around the main pattern comprises: sequentially configuring at least one set of initial assistant patterns from the main pattern as a center to a periphery, and the set of initial assistant patterns comprises a first initial assistant pattern and a second initial assistant pattern located outside the first initial assistant pattern. ### Claim 8 (depends on 3) The configuration method according to claim 3, wherein the first initial assistant pattern and the second initial assistant pattern are arranged at intervals. ### Claim 9 (depends on 1) The configuration method according to claim 1, wherein: the main pattern is a bar-shaped main pattern, and the bar-shaped main pattern has first configuration information of an assistant pattern along the first direction; the bar-shaped main pattern has second configuration information of an assistant pattern along the second direction, and the second configuration information is different from the first configuration information. ### Claim 10 (depends on 1) The configuration method according to claim 1, wherein: the initial assistant pattern is provided around the main pattern through modeling; and the configuration parameter is adjusted by changing data in a model to obtain configuration information. ### Claim 11 (depends on 1) The configuration method according to claim 1, wherein: the step of providing an initial assistant pattern around the main pattern comprises: providing a mask comprising the main pattern and the assistant pattern around the main pattern; and the configuration parameter is adjusted using a lithographic pattern formed by performing lithography through the mask to obtain configuration information. ### Claim 12 (depends on 1) The configuration method according to claim 1, wherein the assistant pattern is a scattering bar. ### Claim 13 (depends on 1) A mask forming method, comprising: providing a chip design pattern comprising a plurality of types of main patterns; configuring an assistant pattern for each type of main pattern of the plurality of types of main patterns using the configuration method according to claim 1 to obtain assistant pattern configuration information corresponding to each type of main pattern; providing a chip mask comprising at least one type of main pattern; and configuring an assistant pattern for the main pattern on the mask according to assistant pattern configuration information corresponding to the main pattern. ### Claim 14 (depends on 13) The forming method according to claim 13, wherein: in the step of obtaining the assistant pattern configuration information corresponding to each type of main pattern, an assistant pattern configuration parameter corresponding to each type of main pattern is summarized into a table; and an assistant pattern configuration parameter corresponding to the main pattern on the mask is obtained through table lookup according to the assistant pattern configuration information corresponding to the main pattern. ### Claim 15 (depends on 13) The forming method according to claim 13, wherein the main pattern comprises a one-dimensional main pattern, a rectangular main pattern, or a square main pattern. ### Claim 16 (depends on 1) A mask, comprising a plurality of types of main patterns and an assistant pattern around the main pattern, wherein the assistant pattern is obtained using the configuration method of claim 1. ### Claim 17 (depends on 1) A device, comprising: at least one memory configured to store one or more computer instructions; and at least one processor configured to execute the one or more computer instructions stored in the memory to implement the configuration method according to claim 1. ### Claim 18 (depends on 1) A non-transitory storage medium configured to store one or more computer instructions, wherein the one or more computer instructions when executed by a processor, directed to processor to implement the configuration method according to claim 1.